An apparatus comprising a waveguide-modulator and laser-diode and a method of manufacture thereof

Handle URI:
http://hdl.handle.net/10754/623499
Title:
An apparatus comprising a waveguide-modulator and laser-diode and a method of manufacture thereof
Authors:
Ooi, Boon S. ( 0000-0001-9606-5578 ) ; Shen, Chao; Ng, Tien Khee ( 0000-0002-1480-6975 ) ; Alyamani, Ahmed Y.; Eldesouki, Munir M.
Assignee:
King Abdullah University Of Science And Technology; King Abdulaziz City For Science And Technology
Abstract:
Example apparatuses are provided for simultaneous generation of high intensity light and modulated light signals at low modulation bias operating characteristics. An example apparatus includes a semipolar or nonpolar GaN-based substrate, a reverse- biased waveguide modulator section, and a forward-biased gain section based on InGaN/GaN quantum-well active regions, wherein the forward-biased gain section is grown on the semipolar or nonpolar GaN-based substrate. Methods of manufacturing the apparatuses described herein are also contemplated and described herein.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Issue Date:
13-Apr-2017
Submitted date:
2015-10-05
Type:
Patent
Application Number:
WO 2017060836 A1
Patent Status:
Published Application
Additional Links:
http://www.google.com/patents/WO2017060836A1; http://worldwide.espacenet.com/publicationDetails/biblio?CC=WO&NR=2017060836A1&KC=A1&FT=D
Appears in Collections:
Patents

Full metadata record

DC FieldValue Language
dc.contributor.authorOoi, Boon S.en
dc.contributor.authorShen, Chaoen
dc.contributor.authorNg, Tien Kheeen
dc.contributor.authorAlyamani, Ahmed Y.en
dc.contributor.authorEldesouki, Munir M.en
dc.date.accessioned2017-05-15T08:25:59Z-
dc.date.available2017-05-15T08:25:59Z-
dc.date.issued2017-04-13-
dc.date.submitted2015-10-05-
dc.identifier.urihttp://hdl.handle.net/10754/623499-
dc.description.abstractExample apparatuses are provided for simultaneous generation of high intensity light and modulated light signals at low modulation bias operating characteristics. An example apparatus includes a semipolar or nonpolar GaN-based substrate, a reverse- biased waveguide modulator section, and a forward-biased gain section based on InGaN/GaN quantum-well active regions, wherein the forward-biased gain section is grown on the semipolar or nonpolar GaN-based substrate. Methods of manufacturing the apparatuses described herein are also contemplated and described herein.en
dc.relation.urlhttp://www.google.com/patents/WO2017060836A1en
dc.relation.urlhttp://worldwide.espacenet.com/publicationDetails/biblio?CC=WO&NR=2017060836A1&KC=A1&FT=Den
dc.titleAn apparatus comprising a waveguide-modulator and laser-diode and a method of manufacture thereofen
dc.typePatenten
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.description.statusPublished Applicationen
dc.contributor.assigneeKing Abdullah University Of Science And Technologyen
dc.contributor.assigneeKing Abdulaziz City For Science And Technologyen
dc.description.countryWorld Intellectual Property Organization (WIPO)en
dc.identifier.applicationnumberWO 2017060836 A1en
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