Pseudodirect to Direct Compositional Crossover in Wurtzite GaP/InxGa1–xP Core–Shell Nanowires

Handle URI:
http://hdl.handle.net/10754/623494
Title:
Pseudodirect to Direct Compositional Crossover in Wurtzite GaP/InxGa1–xP Core–Shell Nanowires
Authors:
Gagliano, L.; Belabbes, Abderrezak; Albani, M.; Assali, S.; Verheijen, M. A.; Miglio, L.; Bechstedt, F.; Haverkort, J. E. M.; Bakkers, E. P. A. M.
Abstract:
Thanks to their uniqueness, nanowires allow the realization of novel semiconductor crystal structures with yet unexplored properties, which can be key to overcome current technological limits. Here we develop the growth of wurtzite GaP/InGaP core-shell nanowires with tunable indium concentration and optical emission in the visible region from 590 nm (2.1 eV) to 760 nm (1.6 eV). We demonstrate a pseudodirect (δ-δ) to direct (δ-δ) transition crossover through experimental and theoretical approach. Time resolved and temperature dependent photoluminescence measurements were used, which led to the observation of a steep change in carrier lifetime and temperature dependence by respectively one and 3 orders of magnitude in the range 0.28 ± 0.04 ≤ x ≤ 0.41 ± 0.04. Our work reveals the electronic properties of wurtzite InGaP.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Gagliano L, Belabbes A, Albani M, Assali S, Verheijen MA, et al. (2016) Pseudodirect to Direct Compositional Crossover in Wurtzite GaP/InxGa1–xP Core–Shell Nanowires. Nano Letters 16: 7930–7936. Available: http://dx.doi.org/10.1021/acs.nanolett.6b04242.
Publisher:
American Chemical Society (ACS)
Journal:
Nano Letters
Issue Date:
29-Nov-2016
DOI:
10.1021/acs.nanolett.6b04242
Type:
Article
ISSN:
1530-6984; 1530-6992
Sponsors:
We thank S. E. T. ter Huurne and Y. L. W. van Hees for assisting with the measurements and Dr. S. Koelling for the fabrication of the lamellae. This research is jointly supported by the Dutch Technology Foundation STW and Philips Electronics. STW is part of The Netherlands Organization for Scientific Research (NWO), which is partly founded by the Ministry of Economic Affairs. Solliance is acknowledged for funding the TEM facility.
Additional Links:
http://pubs.acs.org/doi/full/10.1021/acs.nanolett.6b04242
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorGagliano, L.en
dc.contributor.authorBelabbes, Abderrezaken
dc.contributor.authorAlbani, M.en
dc.contributor.authorAssali, S.en
dc.contributor.authorVerheijen, M. A.en
dc.contributor.authorMiglio, L.en
dc.contributor.authorBechstedt, F.en
dc.contributor.authorHaverkort, J. E. M.en
dc.contributor.authorBakkers, E. P. A. M.en
dc.date.accessioned2017-05-14T12:03:58Z-
dc.date.available2017-05-14T12:03:58Z-
dc.date.issued2016-11-29en
dc.identifier.citationGagliano L, Belabbes A, Albani M, Assali S, Verheijen MA, et al. (2016) Pseudodirect to Direct Compositional Crossover in Wurtzite GaP/InxGa1–xP Core–Shell Nanowires. Nano Letters 16: 7930–7936. Available: http://dx.doi.org/10.1021/acs.nanolett.6b04242.en
dc.identifier.issn1530-6984en
dc.identifier.issn1530-6992en
dc.identifier.doi10.1021/acs.nanolett.6b04242en
dc.identifier.urihttp://hdl.handle.net/10754/623494-
dc.description.abstractThanks to their uniqueness, nanowires allow the realization of novel semiconductor crystal structures with yet unexplored properties, which can be key to overcome current technological limits. Here we develop the growth of wurtzite GaP/InGaP core-shell nanowires with tunable indium concentration and optical emission in the visible region from 590 nm (2.1 eV) to 760 nm (1.6 eV). We demonstrate a pseudodirect (δ-δ) to direct (δ-δ) transition crossover through experimental and theoretical approach. Time resolved and temperature dependent photoluminescence measurements were used, which led to the observation of a steep change in carrier lifetime and temperature dependence by respectively one and 3 orders of magnitude in the range 0.28 ± 0.04 ≤ x ≤ 0.41 ± 0.04. Our work reveals the electronic properties of wurtzite InGaP.en
dc.description.sponsorshipWe thank S. E. T. ter Huurne and Y. L. W. van Hees for assisting with the measurements and Dr. S. Koelling for the fabrication of the lamellae. This research is jointly supported by the Dutch Technology Foundation STW and Philips Electronics. STW is part of The Netherlands Organization for Scientific Research (NWO), which is partly founded by the Ministry of Economic Affairs. Solliance is acknowledged for funding the TEM facility.en
dc.publisherAmerican Chemical Society (ACS)en
dc.relation.urlhttp://pubs.acs.org/doi/full/10.1021/acs.nanolett.6b04242en
dc.titlePseudodirect to Direct Compositional Crossover in Wurtzite GaP/InxGa1–xP Core–Shell Nanowiresen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalNano Lettersen
dc.contributor.institutionDepartment of Applied Physics, Eindhoven University of Technology, Eindhoven, 5600 MB, Netherlandsen
dc.contributor.institutionInstitut für Festkörpertheorie und -optik, Friedrich-Schiller-Universitat, Max-Wien-Platz 1, Jena, D-07743, Germanyen
dc.contributor.institutionL-NESS, Department of Materials Science, University of Milano Bicocca, Milan, 20125, Italyen
dc.contributor.institutionPhilips Innovation Laboratories Eindhoven, High Tech Campus 11, Eindhoven, 5656AE, Netherlandsen
dc.contributor.institutionKavli Institute of Nanoscience, Delft University of Technology, Delft, 2600 GA, Netherlandsen
kaust.authorBelabbes, Abderrezaken
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