Electronic Properties of Graphene–PtSe2 Contacts

Handle URI:
http://hdl.handle.net/10754/623450
Title:
Electronic Properties of Graphene–PtSe2 Contacts
Authors:
Sattar, Shahid; Schwingenschlögl, Udo ( 0000-0003-4179-7231 )
Abstract:
In this article, we study the electronic properties of graphene in contact with monolayer and bilayer PtSe2 using first-principles calculations. It turns out that there is no charge transfer between the components because of the weak van der Waals interaction. We calculate the work functions of monolayer and bilayer PtSe2 and analyze the band bending at the contact with graphene. The formation of an n-type Schottky contact with monolayer PtSe2 and a p-type Schottky contact with bilayer PtSe2 is demonstrated. The Schottky barrier height is very low in the bilayer case and can be reduced to zero by 0.8% biaxial tensile strain.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Sattar S, Schwingenschlögl U (2017) Electronic Properties of Graphene–PtSe2 Contacts. ACS Applied Materials & Interfaces. Available: http://dx.doi.org/10.1021/acsami.7b00012.
Publisher:
American Chemical Society (ACS)
Journal:
ACS Applied Materials & Interfaces
Issue Date:
26-Apr-2017
DOI:
10.1021/acsami.7b00012
Type:
Article
ISSN:
1944-8244; 1944-8252
Sponsors:
The research reported in this publication was supported by funding from King Abdullah University of Science and Technology (KAUST). Fruitful discussions with M. Sajjad and N. Singh are gratefully acknowledged. This publication was made possible by a National Priorities Research Program grant (NPRP 7-665-1-125) from the Qatar National Research Fund (a member of The Qatar Foundation). The statements made herein are solely the responsibility of the authors.
Additional Links:
http://pubs.acs.org/doi/abs/10.1021/acsami.7b00012
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorSattar, Shahiden
dc.contributor.authorSchwingenschlögl, Udoen
dc.date.accessioned2017-05-09T12:54:46Z-
dc.date.available2017-05-09T12:54:46Z-
dc.date.issued2017-04-26en
dc.identifier.citationSattar S, Schwingenschlögl U (2017) Electronic Properties of Graphene–PtSe2 Contacts. ACS Applied Materials & Interfaces. Available: http://dx.doi.org/10.1021/acsami.7b00012.en
dc.identifier.issn1944-8244en
dc.identifier.issn1944-8252en
dc.identifier.doi10.1021/acsami.7b00012en
dc.identifier.urihttp://hdl.handle.net/10754/623450-
dc.description.abstractIn this article, we study the electronic properties of graphene in contact with monolayer and bilayer PtSe2 using first-principles calculations. It turns out that there is no charge transfer between the components because of the weak van der Waals interaction. We calculate the work functions of monolayer and bilayer PtSe2 and analyze the band bending at the contact with graphene. The formation of an n-type Schottky contact with monolayer PtSe2 and a p-type Schottky contact with bilayer PtSe2 is demonstrated. The Schottky barrier height is very low in the bilayer case and can be reduced to zero by 0.8% biaxial tensile strain.en
dc.description.sponsorshipThe research reported in this publication was supported by funding from King Abdullah University of Science and Technology (KAUST). Fruitful discussions with M. Sajjad and N. Singh are gratefully acknowledged. This publication was made possible by a National Priorities Research Program grant (NPRP 7-665-1-125) from the Qatar National Research Fund (a member of The Qatar Foundation). The statements made herein are solely the responsibility of the authors.en
dc.publisherAmerican Chemical Society (ACS)en
dc.relation.urlhttp://pubs.acs.org/doi/abs/10.1021/acsami.7b00012en
dc.subjectband bendingen
dc.subjectcontacten
dc.subjectgrapheneen
dc.subjectheterostructureen
dc.subjectplatinum diselenideen
dc.titleElectronic Properties of Graphene–PtSe2 Contactsen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalACS Applied Materials & Interfacesen
kaust.authorSattar, Shahiden
kaust.authorSchwingenschlögl, Udoen
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