Lead Monoxide: Two-Dimensional Ferromagnetic Semiconductor Induced by Hole-Doping

Handle URI:
http://hdl.handle.net/10754/623436
Title:
Lead Monoxide: Two-Dimensional Ferromagnetic Semiconductor Induced by Hole-Doping
Authors:
Wang, Yao; Zhang, Qingyun; Shen, Qian; Cheng, Yingchun; Schwingenschlögl, Udo ( 0000-0003-4179-7231 ) ; Huang, Wei
Abstract:
We employ first-principles calculations to demonstrate ferromagnetic ground states for single- and multi-layer lead monoxide (PbO) under hole-doping, originating from a van Hove singularity at the valence band edge. Both the sample thickness and applied strain are found to have huge effects on the electronic and magnetic properties. Multi-layer PbO is an indirect band gap semiconductor, while a direct band gap is realized in the single-layer limit. In hole-doped single-layer PbO, biaxial tensile strain can enhance the stability of the ferromagnetic state.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Wang Y, Zhang Q, Shen Q, Cheng Y, Schwingenschlögl U, et al. (2017) Lead monoxide: a two-dimensional ferromagnetic semiconductor induced by hole-doping. J Mater Chem C. Available: http://dx.doi.org/10.1039/c7tc00299h.
Publisher:
Royal Society of Chemistry (RSC)
Journal:
J. Mater. Chem. C
Issue Date:
12-Apr-2017
DOI:
10.1039/c7tc00299h
Type:
Article
ISSN:
2050-7526; 2050-7534
Sponsors:
This work was financially supported by the National Natural Science Foundation of China (No. 11504169, 61575094 and 21673118), the National Basic Research Program of China (2015CB932200), the Natural Science Foundation of the Higher Education Institutions of Jiangsu Province, China (16KJB150018) and the Jiangsu Province Postgraduate Innovation Project. The research reported in this publication was supported by funding from King Abdullah University of Science and Technology (KAUST).
Additional Links:
http://pubs.rsc.org/en/Content/ArticleLanding/2017/TC/C7TC00299H#!divAbstract
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorWang, Yaoen
dc.contributor.authorZhang, Qingyunen
dc.contributor.authorShen, Qianen
dc.contributor.authorCheng, Yingchunen
dc.contributor.authorSchwingenschlögl, Udoen
dc.contributor.authorHuang, Weien
dc.date.accessioned2017-05-09T12:54:45Z-
dc.date.available2017-05-09T12:54:45Z-
dc.date.issued2017-04-12en
dc.identifier.citationWang Y, Zhang Q, Shen Q, Cheng Y, Schwingenschlögl U, et al. (2017) Lead monoxide: a two-dimensional ferromagnetic semiconductor induced by hole-doping. J Mater Chem C. Available: http://dx.doi.org/10.1039/c7tc00299h.en
dc.identifier.issn2050-7526en
dc.identifier.issn2050-7534en
dc.identifier.doi10.1039/c7tc00299hen
dc.identifier.urihttp://hdl.handle.net/10754/623436-
dc.description.abstractWe employ first-principles calculations to demonstrate ferromagnetic ground states for single- and multi-layer lead monoxide (PbO) under hole-doping, originating from a van Hove singularity at the valence band edge. Both the sample thickness and applied strain are found to have huge effects on the electronic and magnetic properties. Multi-layer PbO is an indirect band gap semiconductor, while a direct band gap is realized in the single-layer limit. In hole-doped single-layer PbO, biaxial tensile strain can enhance the stability of the ferromagnetic state.en
dc.description.sponsorshipThis work was financially supported by the National Natural Science Foundation of China (No. 11504169, 61575094 and 21673118), the National Basic Research Program of China (2015CB932200), the Natural Science Foundation of the Higher Education Institutions of Jiangsu Province, China (16KJB150018) and the Jiangsu Province Postgraduate Innovation Project. The research reported in this publication was supported by funding from King Abdullah University of Science and Technology (KAUST).en
dc.publisherRoyal Society of Chemistry (RSC)en
dc.relation.urlhttp://pubs.rsc.org/en/Content/ArticleLanding/2017/TC/C7TC00299H#!divAbstracten
dc.titleLead Monoxide: Two-Dimensional Ferromagnetic Semiconductor Induced by Hole-Dopingen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalJ. Mater. Chem. Cen
dc.contributor.institutionKey Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, Chinaen
kaust.authorZhang, Qingyunen
kaust.authorSchwingenschlögl, Udoen
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