Oxidant-Dependent Thermoelectric Properties of Undoped ZnO Films by Atomic Layer Deposition

Handle URI:
http://hdl.handle.net/10754/623434
Title:
Oxidant-Dependent Thermoelectric Properties of Undoped ZnO Films by Atomic Layer Deposition
Authors:
Kim, Hyunho; Wang, Zhenwei; Hedhili, Mohamed N. ( 0000-0002-3624-036X ) ; Wehbe, Nimer; Alshareef, Husam N. ( 0000-0001-5029-2142 )
Abstract:
Extraordinary oxidant-dependent changes in the thermoelectric properties of undoped ZnO thin films deposited by atomic layer deposition (ALD) have been observed. Specifically, deionized water and ozone oxidants are used in the growth of ZnO by ALD using diethylzinc as a zinc precursor. No substitutional atoms have been added to the ZnO films. By using ozone as an oxidant instead of water, a thermoelectric power factor (σS) of 5.76 × 10 W m K is obtained at 705 K for undoped ZnO films. In contrast, the maximum power factor for the water-based ZnO film is only 2.89 × 10 W m K at 746 K. Materials analysis results indicate that the oxygen vacancy levels in the water- and ozone-grown ZnO films are essentially the same, but the difference comes from Zn-related defects present in the ZnO films. The data suggest that the strong oxidant effect on thermoelectric performance can be explained by a mechanism involving point defect-induced differences in carrier concentration between these two oxides and a self-compensation effect in water-based ZnO due to the competitive formations of both oxygen and zinc vacancies. This strong oxidant effect on the thermoelectric properties of undoped ZnO films provides a pathway to improve the thermoelectric performance of this important material.
KAUST Department:
Materials Science and Engineering Program
Citation:
Kim H, Wang Z, Hedhili MN, Wehbe N, Alshareef HN (2017) Oxidant-Dependent Thermoelectric Properties of Undoped ZnO Films by Atomic Layer Deposition. Chemistry of Materials 29: 2794–2802. Available: http://dx.doi.org/10.1021/acs.chemmater.6b04654.
Publisher:
American Chemical Society (ACS)
Journal:
Chemistry of Materials
Issue Date:
27-Feb-2017
DOI:
10.1021/acs.chemmater.6b04654
Type:
Article
ISSN:
0897-4756; 1520-5002
Sponsors:
Research reported in this publication was supported by King Abdullah University of Science and Technology (KAUST).
Additional Links:
http://pubs.acs.org/doi/abs/10.1021/acs.chemmater.6b04654
Appears in Collections:
Articles; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorKim, Hyunhoen
dc.contributor.authorWang, Zhenweien
dc.contributor.authorHedhili, Mohamed N.en
dc.contributor.authorWehbe, Nimeren
dc.contributor.authorAlshareef, Husam N.en
dc.date.accessioned2017-05-09T12:54:45Z-
dc.date.available2017-05-09T12:54:45Z-
dc.date.issued2017-02-27en
dc.identifier.citationKim H, Wang Z, Hedhili MN, Wehbe N, Alshareef HN (2017) Oxidant-Dependent Thermoelectric Properties of Undoped ZnO Films by Atomic Layer Deposition. Chemistry of Materials 29: 2794–2802. Available: http://dx.doi.org/10.1021/acs.chemmater.6b04654.en
dc.identifier.issn0897-4756en
dc.identifier.issn1520-5002en
dc.identifier.doi10.1021/acs.chemmater.6b04654en
dc.identifier.urihttp://hdl.handle.net/10754/623434-
dc.description.abstractExtraordinary oxidant-dependent changes in the thermoelectric properties of undoped ZnO thin films deposited by atomic layer deposition (ALD) have been observed. Specifically, deionized water and ozone oxidants are used in the growth of ZnO by ALD using diethylzinc as a zinc precursor. No substitutional atoms have been added to the ZnO films. By using ozone as an oxidant instead of water, a thermoelectric power factor (σS) of 5.76 × 10 W m K is obtained at 705 K for undoped ZnO films. In contrast, the maximum power factor for the water-based ZnO film is only 2.89 × 10 W m K at 746 K. Materials analysis results indicate that the oxygen vacancy levels in the water- and ozone-grown ZnO films are essentially the same, but the difference comes from Zn-related defects present in the ZnO films. The data suggest that the strong oxidant effect on thermoelectric performance can be explained by a mechanism involving point defect-induced differences in carrier concentration between these two oxides and a self-compensation effect in water-based ZnO due to the competitive formations of both oxygen and zinc vacancies. This strong oxidant effect on the thermoelectric properties of undoped ZnO films provides a pathway to improve the thermoelectric performance of this important material.en
dc.description.sponsorshipResearch reported in this publication was supported by King Abdullah University of Science and Technology (KAUST).en
dc.publisherAmerican Chemical Society (ACS)en
dc.relation.urlhttp://pubs.acs.org/doi/abs/10.1021/acs.chemmater.6b04654en
dc.titleOxidant-Dependent Thermoelectric Properties of Undoped ZnO Films by Atomic Layer Depositionen
dc.typeArticleen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.identifier.journalChemistry of Materialsen
kaust.authorKim, Hyunhoen
kaust.authorWang, Zhenweien
kaust.authorHedhili, Mohamed N.en
kaust.authorWehbe, Nimeren
kaust.authorAlshareef, Husam N.en
All Items in KAUST are protected by copyright, with all rights reserved, unless otherwise indicated.