Semipolar InGaN-based superluminescent diodes for solid-state lighting and visible light communications

Handle URI:
http://hdl.handle.net/10754/623329
Title:
Semipolar InGaN-based superluminescent diodes for solid-state lighting and visible light communications
Authors:
Shen, Chao; Ng, Tien Khee ( 0000-0002-1480-6975 ) ; Lee, Changmin; Leonard, John T.; Nakamura, Shuji; Speck, James S.; Denbaars, Steven P.; Alyamani, Ahmed Y.; El-Desouki, Munir M.; Ooi, Boon S. ( 0000-0001-9606-5578 )
Abstract:
III-nitride light emitters, such as light-emitting diodes (LEDs) and laser diodes (LDs), have been demonstrated and studied for solid-state lighting (SSL) and visible-light communication (VLC) applications. However, for III-nitride LEDbased SSL-VLC system, its efficiency is limited by the
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Electrical Engineering Program
Citation:
Shen C, Ng TK, Lee C, Leonard JT, Nakamura S, et al. (2017) Semipolar InGaN-based superluminescent diodes for solid-state lighting and visible light communications . Gallium Nitride Materials and Devices XII. Available: http://dx.doi.org/10.1117/12.2251144.
Publisher:
SPIE
Journal:
Gallium Nitride Materials and Devices XII
KAUST Grant Number:
BAS/1/1614-01-01
Conference/Event name:
Gallium Nitride Materials and Devices XII
Issue Date:
16-Feb-2017
DOI:
10.1117/12.2251144
Type:
Conference Paper
Sponsors:
The authors acknowledge the financial support from King Abdulaziz City for Science and Technology (KACST) Grant No. KACST TIC R2-FP-008, and KACST-KAUST-UCSB Solid-State Lighting Program. This work is partially supported by King Abdullah University of Science and Technology (KAUST) baseline funding (BAS/1/1614-01-01).
Additional Links:
http://proceedings.spiedigitallibrary.org/proceeding.aspx?articleid=2605125
Appears in Collections:
Conference Papers; Electrical Engineering Program; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorShen, Chaoen
dc.contributor.authorNg, Tien Kheeen
dc.contributor.authorLee, Changminen
dc.contributor.authorLeonard, John T.en
dc.contributor.authorNakamura, Shujien
dc.contributor.authorSpeck, James S.en
dc.contributor.authorDenbaars, Steven P.en
dc.contributor.authorAlyamani, Ahmed Y.en
dc.contributor.authorEl-Desouki, Munir M.en
dc.contributor.authorOoi, Boon S.en
dc.date.accessioned2017-05-04T06:39:21Z-
dc.date.available2017-05-04T06:39:21Z-
dc.date.issued2017-02-16en
dc.identifier.citationShen C, Ng TK, Lee C, Leonard JT, Nakamura S, et al. (2017) Semipolar InGaN-based superluminescent diodes for solid-state lighting and visible light communications . Gallium Nitride Materials and Devices XII. Available: http://dx.doi.org/10.1117/12.2251144.en
dc.identifier.doi10.1117/12.2251144en
dc.identifier.urihttp://hdl.handle.net/10754/623329-
dc.description.abstractIII-nitride light emitters, such as light-emitting diodes (LEDs) and laser diodes (LDs), have been demonstrated and studied for solid-state lighting (SSL) and visible-light communication (VLC) applications. However, for III-nitride LEDbased SSL-VLC system, its efficiency is limited by theen
dc.description.sponsorshipThe authors acknowledge the financial support from King Abdulaziz City for Science and Technology (KACST) Grant No. KACST TIC R2-FP-008, and KACST-KAUST-UCSB Solid-State Lighting Program. This work is partially supported by King Abdullah University of Science and Technology (KAUST) baseline funding (BAS/1/1614-01-01).en
dc.publisherSPIEen
dc.relation.urlhttp://proceedings.spiedigitallibrary.org/proceeding.aspx?articleid=2605125en
dc.rightsCopyright 2017 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.en
dc.subjectAmplified spontaneous emissionen
dc.subjectGallium nitrideen
dc.subjectInGaNen
dc.subjectLaser diodeen
dc.subjectLight-emitting diodeen
dc.subjectSolid-state lightingen
dc.subjectSuperluminescent diodesen
dc.subjectVisible light communicationen
dc.titleSemipolar InGaN-based superluminescent diodes for solid-state lighting and visible light communicationsen
dc.typeConference Paperen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentElectrical Engineering Programen
dc.identifier.journalGallium Nitride Materials and Devices XIIen
dc.conference.date2017-01-30 to 2017-02-02en
dc.conference.nameGallium Nitride Materials and Devices XIIen
dc.conference.locationSan Francisco, CA, USAen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionUniv. of California, Santa Barbara (United States)en
dc.contributor.institutionKing Abdulaziz City for Science and Technology (Saudi Arabia)en
kaust.authorShen, Chaoen
kaust.authorNg, Tien Kheeen
kaust.authorOoi, Boon S.en
kaust.grant.numberBAS/1/1614-01-01en
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