Semipolar InGaN-based superluminescent diodes for solid-state lighting and visible light communications

Handle URI:
http://hdl.handle.net/10754/623329
Title:
Semipolar InGaN-based superluminescent diodes for solid-state lighting and visible light communications
Authors:
Shen, Chao; Ng, Tien Khee ( 0000-0002-1480-6975 ) ; Lee, Changmin; Leonard, John T.; Nakamura, Shuji; Speck, James S.; Denbaars, Steven P.; Alyamani, Ahmed Y.; El-Desouki, Munir M.; Ooi, Boon S. ( 0000-0001-9606-5578 )
Abstract:
III-nitride light emitters, such as light-emitting diodes (LEDs) and laser diodes (LDs), have been demonstrated and studied for solid-state lighting (SSL) and visible-light communication (VLC) applications. However, for III-nitride LEDbased SSL-VLC system, its efficiency is limited by the
KAUST Department:
King Abdullah Univ. of Science and Technology (Saudi Arabia)
Citation:
Shen C, Ng TK, Lee C, Leonard JT, Nakamura S, et al. (2017) Semipolar InGaN-based superluminescent diodes for solid-state lighting and visible light communications . Gallium Nitride Materials and Devices XII. Available: http://dx.doi.org/10.1117/12.2251144.
Publisher:
SPIE
Journal:
Gallium Nitride Materials and Devices XII
KAUST Grant Number:
BAS/1/1614-01-01
Conference/Event name:
Gallium Nitride Materials and Devices XII
Issue Date:
16-Feb-2017
DOI:
10.1117/12.2251144
Type:
Conference Paper
Sponsors:
The authors acknowledge the financial support from King Abdulaziz City for Science and Technology (KACST) Grant No. KACST TIC R2-FP-008, and KACST-KAUST-UCSB Solid-State Lighting Program. This work is partially supported by King Abdullah University of Science and Technology (KAUST) baseline funding (BAS/1/1614-01-01).
Additional Links:
http://proceedings.spiedigitallibrary.org/proceeding.aspx?articleid=2605125
Appears in Collections:
Conference Papers

Full metadata record

DC FieldValue Language
dc.contributor.authorShen, Chaoen
dc.contributor.authorNg, Tien Kheeen
dc.contributor.authorLee, Changminen
dc.contributor.authorLeonard, John T.en
dc.contributor.authorNakamura, Shujien
dc.contributor.authorSpeck, James S.en
dc.contributor.authorDenbaars, Steven P.en
dc.contributor.authorAlyamani, Ahmed Y.en
dc.contributor.authorEl-Desouki, Munir M.en
dc.contributor.authorOoi, Boon S.en
dc.date.accessioned2017-05-04T06:39:21Z-
dc.date.available2017-05-04T06:39:21Z-
dc.date.issued2017-02-16en
dc.identifier.citationShen C, Ng TK, Lee C, Leonard JT, Nakamura S, et al. (2017) Semipolar InGaN-based superluminescent diodes for solid-state lighting and visible light communications . Gallium Nitride Materials and Devices XII. Available: http://dx.doi.org/10.1117/12.2251144.en
dc.identifier.doi10.1117/12.2251144en
dc.identifier.urihttp://hdl.handle.net/10754/623329-
dc.description.abstractIII-nitride light emitters, such as light-emitting diodes (LEDs) and laser diodes (LDs), have been demonstrated and studied for solid-state lighting (SSL) and visible-light communication (VLC) applications. However, for III-nitride LEDbased SSL-VLC system, its efficiency is limited by theen
dc.description.sponsorshipThe authors acknowledge the financial support from King Abdulaziz City for Science and Technology (KACST) Grant No. KACST TIC R2-FP-008, and KACST-KAUST-UCSB Solid-State Lighting Program. This work is partially supported by King Abdullah University of Science and Technology (KAUST) baseline funding (BAS/1/1614-01-01).en
dc.publisherSPIEen
dc.relation.urlhttp://proceedings.spiedigitallibrary.org/proceeding.aspx?articleid=2605125en
dc.rightsCopyright 2017 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.en
dc.subjectAmplified spontaneous emissionen
dc.subjectGallium nitrideen
dc.subjectInGaNen
dc.subjectLaser diodeen
dc.subjectLight-emitting diodeen
dc.subjectSolid-state lightingen
dc.subjectSuperluminescent diodesen
dc.subjectVisible light communicationen
dc.titleSemipolar InGaN-based superluminescent diodes for solid-state lighting and visible light communicationsen
dc.typeConference Paperen
dc.contributor.departmentKing Abdullah Univ. of Science and Technology (Saudi Arabia)en
dc.identifier.journalGallium Nitride Materials and Devices XIIen
dc.conference.date2017-01-30 to 2017-02-02en
dc.conference.nameGallium Nitride Materials and Devices XIIen
dc.conference.locationSan Francisco, CA, USAen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionUniv. of California, Santa Barbara (United States)en
dc.contributor.institutionKing Abdulaziz City for Science and Technology (Saudi Arabia)en
kaust.authorShen, Chaoen
kaust.authorNg, Tien Kheeen
kaust.authorOoi, Boon S.en
kaust.grant.numberBAS/1/1614-01-01en
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