Photoinduced entropy of InGaN/GaN p-i-n double-heterostructure nanowires

Handle URI:
http://hdl.handle.net/10754/623269
Title:
Photoinduced entropy of InGaN/GaN p-i-n double-heterostructure nanowires
Authors:
Alfaraj, Nasir ( 0000-0002-0429-9439 ) ; Mitra, Somak; Wu, Feng; Ajia, Idris A. ( 0000-0003-3156-4426 ) ; Janjua, Bilal ( 0000-0001-9974-9879 ) ; Prabaswara, Aditya; Aljefri, Renad A.; Sun, Haiding; Ng, Tien Khee ( 0000-0002-1480-6975 ) ; Ooi, Boon S. ( 0000-0001-9606-5578 ) ; Roqan, Iman S. ( 0000-0001-7442-4330 ) ; Li, Xiaohang ( 0000-0002-4434-365X )
Abstract:
The photoinduced entropy of InGaN/GaN p-i-n nanowires was investigated using temperature-dependent (6–290 K) photoluminescence. We also analyzed the photocarrier dynamics in the InGaN active regions using time-resolved photoluminescence. An increasing trend in the amount of generated photoinduced entropy of the system above 250 K was observed, while we observed an oscillatory trend in the generated entropy of the system below 250 K that stabilizes between 200 and 250 K. Strong exciton localization in indium-rich clusters, carrier trapping by surface defect states, and thermodynamic entropy effects were examined and related to the photocarrier dynamics. We conjecture that the amount of generated photoinduced entropy of the system increases as more non-radiative channels become activated and more shallowly localized carriers settle into deeply localized states; thereby, additional degrees of uncertainty related to the energy of states involved in thermionic transitions are attained.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Physical Sciences and Engineering (PSE) Division; Advanced Semiconductor Laboratory; Photonics Laboratory; Semiconductor and Material Spectroscopy (SMS) Laboratory
Citation:
Photoinduced entropy of InGaN/GaN p-i-n double-heterostructure nanowires 2017, 110 (16):161110 Applied Physics Letters
Publisher:
AIP Publishing
Journal:
Applied Physics Letters
Issue Date:
17-Apr-2017
DOI:
10.1063/1.4981252
Type:
Article
ISSN:
0003-6951; 1077-3118
Sponsors:
King Abdullah University of Science and Technology (KAUST) baseline funding, BAS/1/1664-01-01, BAS/1/1647-01-05 and BAS/1/1614–01-01. King Abdulaziz City for Science and Technology (KACST), Grant No. KACST TIC R2-FP-008.
Additional Links:
http://aip.scitation.org/doi/10.1063/1.4981252; https://www.researchgate.net/publication/316266814_Photoinduced_entropy_of_InGaNGaN_p-i-n_double-heterostructure_nanowires
Appears in Collections:
Articles

Full metadata record

DC FieldValue Language
dc.contributor.authorAlfaraj, Nasiren
dc.contributor.authorMitra, Somaken
dc.contributor.authorWu, Fengen
dc.contributor.authorAjia, Idris A.en
dc.contributor.authorJanjua, Bilalen
dc.contributor.authorPrabaswara, Adityaen
dc.contributor.authorAljefri, Renad A.en
dc.contributor.authorSun, Haidingen
dc.contributor.authorNg, Tien Kheeen
dc.contributor.authorOoi, Boon S.en
dc.contributor.authorRoqan, Iman S.en
dc.contributor.authorLi, Xiaohangen
dc.date.accessioned2017-04-23T13:46:48Z-
dc.date.available2017-04-23T13:46:48Z-
dc.date.issued2017-04-17-
dc.identifier.citationPhotoinduced entropy of InGaN/GaN p-i-n double-heterostructure nanowires 2017, 110 (16):161110 Applied Physics Lettersen
dc.identifier.issn0003-6951-
dc.identifier.issn1077-3118-
dc.identifier.doi10.1063/1.4981252-
dc.identifier.urihttp://hdl.handle.net/10754/623269-
dc.description.abstractThe photoinduced entropy of InGaN/GaN p-i-n nanowires was investigated using temperature-dependent (6–290 K) photoluminescence. We also analyzed the photocarrier dynamics in the InGaN active regions using time-resolved photoluminescence. An increasing trend in the amount of generated photoinduced entropy of the system above 250 K was observed, while we observed an oscillatory trend in the generated entropy of the system below 250 K that stabilizes between 200 and 250 K. Strong exciton localization in indium-rich clusters, carrier trapping by surface defect states, and thermodynamic entropy effects were examined and related to the photocarrier dynamics. We conjecture that the amount of generated photoinduced entropy of the system increases as more non-radiative channels become activated and more shallowly localized carriers settle into deeply localized states; thereby, additional degrees of uncertainty related to the energy of states involved in thermionic transitions are attained.en
dc.description.sponsorshipKing Abdullah University of Science and Technology (KAUST) baseline funding, BAS/1/1664-01-01, BAS/1/1647-01-05 and BAS/1/1614–01-01. King Abdulaziz City for Science and Technology (KACST), Grant No. KACST TIC R2-FP-008.en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urlhttp://aip.scitation.org/doi/10.1063/1.4981252en
dc.relation.urlhttps://www.researchgate.net/publication/316266814_Photoinduced_entropy_of_InGaNGaN_p-i-n_double-heterostructure_nanowiresen
dc.rightsArchived with thanks to Applied Physics Lettersen
dc.subjectPhotoluminescenceen
dc.subjectEntropyen
dc.subjectNanowiresen
dc.subjectIII-V semiconductorsen
dc.subjectLocalized statesen
dc.titlePhotoinduced entropy of InGaN/GaN p-i-n double-heterostructure nanowiresen
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentAdvanced Semiconductor Laboratoryen
dc.contributor.departmentPhotonics Laboratoryen
dc.contributor.departmentSemiconductor and Material Spectroscopy (SMS) Laboratoryen
dc.identifier.journalApplied Physics Lettersen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorAlfaraj, Nasiren
kaust.authorMitra, Somaken
kaust.authorWu, Fengen
kaust.authorAjia, Idris A.en
kaust.authorJanjua, Bilalen
kaust.authorPrabaswara, Adityaen
kaust.authorAljefri, Renad A.en
kaust.authorSun, Haidingen
kaust.authorNg, Tien Kheeen
kaust.authorOoi, Boon S.en
kaust.authorRoqan, Iman S.en
kaust.authorLi, Xiaohangen
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