Impact of organic overlayers on a-Si:H/c-Si surface potential

Handle URI:
http://hdl.handle.net/10754/623249
Title:
Impact of organic overlayers on a-Si:H/c-Si surface potential
Authors:
Seif, Johannes P.; Niesen, Bjoern; Tomasi, Andrea; Ballif, Christophe; De Wolf, Stefaan ( 0000-0003-1619-9061 )
Abstract:
Bilayers of intrinsic and doped hydrogenated amorphous silicon, deposited on crystalline silicon (c-Si) surfaces, simultaneously provide contact passivation and carrier collection in silicon heterojunction solar cells. Recently, we have shown that the presence of overlaying transparent conductive oxides can significantly affect the c-Si surface potential induced by these amorphous silicon stacks. Specifically, deposition on the hole-collecting bilayers can result in an undesired weakening of contact passivation, thereby lowering the achievable fill factor in a finished device. We test here a variety of organic semiconductors of different doping levels, overlaying hydrogenated amorphous silicon layers and silicon-based hole collectors, to mitigate this effect. We find that these materials enhance the c-Si surface potential, leading to increased implied fill factors. This opens opportunities for improved device performance.
KAUST Department:
KAUST Solar Center (KSC)
Citation:
Seif JP, Niesen B, Tomasi A, Ballif C, De Wolf S (2017) Impact of organic overlayers on a-Si:H/c-Si surface potential. Applied Physics Letters 110: 151601. Available: http://dx.doi.org/10.1063/1.4980047.
Publisher:
AIP Publishing
Journal:
Applied Physics Letters
Issue Date:
11-Apr-2017
DOI:
10.1063/1.4980047
Type:
Article
ISSN:
0003-6951; 1077-3118
Sponsors:
The authors gratefully acknowledge the technical support of Cédric Bucher and Lionel Domon. This work was funded by the EuroTech Universities Alliance in the framework of the Interface Science for Photovoltaics initiative, by Axpo Naturstrom Fonds, by the European Commission (FP7 project HERCULES, Contract No. 608498; FP7 project CHEETAH, Contract No. 609788), by the Office fédéral de l'énergie (OFEN), and by the Fonds National Suisse (FNS) Reequip program (Grant Nos. 206021_139135 and 206021_133832). The research reported in this publication was supported by funding the from King Abdullah University of Science and Technology (KAUST).
Additional Links:
http://aip.scitation.org/doi/10.1063/1.4980047
Appears in Collections:
Articles; Solar and Photovoltaic Engineering Research Center (SPERC)

Full metadata record

DC FieldValue Language
dc.contributor.authorSeif, Johannes P.en
dc.contributor.authorNiesen, Bjoernen
dc.contributor.authorTomasi, Andreaen
dc.contributor.authorBallif, Christopheen
dc.contributor.authorDe Wolf, Stefaanen
dc.date.accessioned2017-04-17T11:33:46Z-
dc.date.available2017-04-17T11:33:46Z-
dc.date.issued2017-04-11en
dc.identifier.citationSeif JP, Niesen B, Tomasi A, Ballif C, De Wolf S (2017) Impact of organic overlayers on a-Si:H/c-Si surface potential. Applied Physics Letters 110: 151601. Available: http://dx.doi.org/10.1063/1.4980047.en
dc.identifier.issn0003-6951en
dc.identifier.issn1077-3118en
dc.identifier.doi10.1063/1.4980047en
dc.identifier.urihttp://hdl.handle.net/10754/623249-
dc.description.abstractBilayers of intrinsic and doped hydrogenated amorphous silicon, deposited on crystalline silicon (c-Si) surfaces, simultaneously provide contact passivation and carrier collection in silicon heterojunction solar cells. Recently, we have shown that the presence of overlaying transparent conductive oxides can significantly affect the c-Si surface potential induced by these amorphous silicon stacks. Specifically, deposition on the hole-collecting bilayers can result in an undesired weakening of contact passivation, thereby lowering the achievable fill factor in a finished device. We test here a variety of organic semiconductors of different doping levels, overlaying hydrogenated amorphous silicon layers and silicon-based hole collectors, to mitigate this effect. We find that these materials enhance the c-Si surface potential, leading to increased implied fill factors. This opens opportunities for improved device performance.en
dc.description.sponsorshipThe authors gratefully acknowledge the technical support of Cédric Bucher and Lionel Domon. This work was funded by the EuroTech Universities Alliance in the framework of the Interface Science for Photovoltaics initiative, by Axpo Naturstrom Fonds, by the European Commission (FP7 project HERCULES, Contract No. 608498; FP7 project CHEETAH, Contract No. 609788), by the Office fédéral de l'énergie (OFEN), and by the Fonds National Suisse (FNS) Reequip program (Grant Nos. 206021_139135 and 206021_133832). The research reported in this publication was supported by funding the from King Abdullah University of Science and Technology (KAUST).en
dc.publisherAIP Publishingen
dc.relation.urlhttp://aip.scitation.org/doi/10.1063/1.4980047en
dc.rightsThis article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Applied Physics Letters and may be found at http://doi.org/10.1063/1.4980047.en
dc.titleImpact of organic overlayers on a-Si:H/c-Si surface potentialen
dc.typeArticleen
dc.contributor.departmentKAUST Solar Center (KSC)en
dc.identifier.journalApplied Physics Lettersen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionEcole Polytechnique Fédérale de Lausanne (EPFL), Institute of Microengineering (IMT), Photovoltaics and Thin-Film Electronics Laboratory (PV-Lab), Neuchâtel 2002, Switzerlanden
kaust.authorDe Wolf, Stefaanen
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