Band Alignment at GaN/Single-Layer WSe2 Interface

Handle URI:
http://hdl.handle.net/10754/623191
Title:
Band Alignment at GaN/Single-Layer WSe2 Interface
Authors:
Tangi, Malleswararao ( 0000-0003-1141-4324 ) ; Mishra, Pawan ( 0000-0001-9764-6016 ) ; Tseng, Chien-Chih ( 0000-0003-0676-5664 ) ; Ng, Tien Khee ( 0000-0002-1480-6975 ) ; Hedhili, Mohamed N. ( 0000-0002-3624-036X ) ; Anjum, Dalaver H.; Alias, Mohd Sharizal ( 0000-0003-1369-1421 ) ; Wei, Nini; Li, Lain-Jong ( 0000-0002-4059-7783 ) ; Ooi, Boon S. ( 0000-0001-9606-5578 )
Abstract:
We study the band discontinuity at the GaN/single-layer (SL) WSe2 heterointerface. The GaN thin layer is epitaxially grown by molecular beam epitaxy on chemically vapor deposited SL-WSe2/c-sapphire. We confirm that the WSe2 was formed as an SL from structural and optical analyses using atomic force microscopy, scanning transmission electron microscopy, micro-Raman, absorbance, and microphotoluminescence spectra. The determination of band offset parameters at the GaN/SL-WSe2 heterojunction is obtained by high-resolution X-ray photoelectron spectroscopy, electron affinities, and the electronic bandgap values of SL-WSe2 and GaN. The valence band and conduction band offset values are determined to be 2.25 ± 0.15 and 0.80 ± 0.15 eV, respectively, with type II band alignment. The band alignment parameters determined here provide a route toward the integration of group III nitride semiconducting materials with transition metal dichalcogenides (TMDs) for designing and modeling of their heterojunction-based electronic and optoelectronic devices.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Electrical Engineering Program; Physical Sciences and Engineering (PSE) Division; KAUST Catalysis Center (KCC); Imaging and Characterization Core Lab; Photonics Laboratory
Citation:
Tangi M, Mishra P, Tseng C-C, Ng TK, Hedhili MN, et al. (2017) Band Alignment at GaN/Single-Layer WSe2 Interface. ACS Applied Materials & Interfaces 9: 9110–9117. Available: http://dx.doi.org/10.1021/acsami.6b15370.
Publisher:
American Chemical Society (ACS)
Journal:
ACS Applied Materials & Interfaces
KAUST Grant Number:
BAS/1/1614-01-01
Issue Date:
21-Feb-2017
DOI:
10.1021/acsami.6b15370
Type:
Article
ISSN:
1944-8244; 1944-8252
Sponsors:
We acknowledge the financial support from King Abdulaziz City for Science and Technology (KACST), Grant No. KACST TIC R2-FP-008, and baseline funding BAS/1/1614-01-01 of the King Abdullah University of Science and Technology (KAUST).
Additional Links:
http://pubs.acs.org/doi/full/10.1021/acsami.6b15370
Appears in Collections:
Articles; Advanced Nanofabrication, Imaging and Characterization Core Lab; Physical Sciences and Engineering (PSE) Division; Electrical Engineering Program; Photonics Laboratory; KAUST Catalysis Center (KCC); Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorTangi, Malleswararaoen
dc.contributor.authorMishra, Pawanen
dc.contributor.authorTseng, Chien-Chihen
dc.contributor.authorNg, Tien Kheeen
dc.contributor.authorHedhili, Mohamed N.en
dc.contributor.authorAnjum, Dalaver H.en
dc.contributor.authorAlias, Mohd Sharizalen
dc.contributor.authorWei, Ninien
dc.contributor.authorLi, Lain-Jongen
dc.contributor.authorOoi, Boon S.en
dc.date.accessioned2017-04-13T11:51:00Z-
dc.date.available2017-04-13T11:51:00Z-
dc.date.issued2017-02-21en
dc.identifier.citationTangi M, Mishra P, Tseng C-C, Ng TK, Hedhili MN, et al. (2017) Band Alignment at GaN/Single-Layer WSe2 Interface. ACS Applied Materials & Interfaces 9: 9110–9117. Available: http://dx.doi.org/10.1021/acsami.6b15370.en
dc.identifier.issn1944-8244en
dc.identifier.issn1944-8252en
dc.identifier.doi10.1021/acsami.6b15370en
dc.identifier.urihttp://hdl.handle.net/10754/623191-
dc.description.abstractWe study the band discontinuity at the GaN/single-layer (SL) WSe2 heterointerface. The GaN thin layer is epitaxially grown by molecular beam epitaxy on chemically vapor deposited SL-WSe2/c-sapphire. We confirm that the WSe2 was formed as an SL from structural and optical analyses using atomic force microscopy, scanning transmission electron microscopy, micro-Raman, absorbance, and microphotoluminescence spectra. The determination of band offset parameters at the GaN/SL-WSe2 heterojunction is obtained by high-resolution X-ray photoelectron spectroscopy, electron affinities, and the electronic bandgap values of SL-WSe2 and GaN. The valence band and conduction band offset values are determined to be 2.25 ± 0.15 and 0.80 ± 0.15 eV, respectively, with type II band alignment. The band alignment parameters determined here provide a route toward the integration of group III nitride semiconducting materials with transition metal dichalcogenides (TMDs) for designing and modeling of their heterojunction-based electronic and optoelectronic devices.en
dc.description.sponsorshipWe acknowledge the financial support from King Abdulaziz City for Science and Technology (KACST), Grant No. KACST TIC R2-FP-008, and baseline funding BAS/1/1614-01-01 of the King Abdullah University of Science and Technology (KAUST).en
dc.publisherAmerican Chemical Society (ACS)en
dc.relation.urlhttp://pubs.acs.org/doi/full/10.1021/acsami.6b15370en
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials & Interfaces, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://pubs.acs.org/doi/full/10.1021/acsami.6b15370.en
dc.subjectGanen
dc.subjectMolecular Beam Epitaxyen
dc.subjectBand Alignmenten
dc.subjectHrxpsen
dc.subjectSingle Layer Wse2en
dc.subject3D/2d Heterojunctionen
dc.titleBand Alignment at GaN/Single-Layer WSe2 Interfaceen
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentKAUST Catalysis Center (KCC)en
dc.contributor.departmentImaging and Characterization Core Laben
dc.contributor.departmentPhotonics Laboratoryen
dc.identifier.journalACS Applied Materials & Interfacesen
dc.eprint.versionPost-printen
kaust.authorTangi, Malleswararaoen
kaust.authorMishra, Pawanen
kaust.authorTseng, Chien-Chihen
kaust.authorNg, Tien Kheeen
kaust.authorHedhili, Mohamed N.en
kaust.authorAnjum, Dalaver H.en
kaust.authorAlias, Mohd Sharizalen
kaust.authorWei, Ninien
kaust.authorLi, Lain-Jongen
kaust.authorOoi, Boon S.en
kaust.grant.numberBAS/1/1614-01-01en
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