Band Alignment at GaN/Single-Layer WSe2 Interface

Handle URI:
http://hdl.handle.net/10754/623191
Title:
Band Alignment at GaN/Single-Layer WSe2 Interface
Authors:
Tangi, Malleswararao ( 0000-0003-1141-4324 ) ; Mishra, Pawan ( 0000-0001-9764-6016 ) ; Tseng, Chien-Chih ( 0000-0003-0676-5664 ) ; Ng, Tien Khee ( 0000-0002-1480-6975 ) ; Hedhili, Mohamed N. ( 0000-0002-3624-036X ) ; Anjum, Dalaver H.; Alias, Mohd Sharizal ( 0000-0003-1369-1421 ) ; Wei, Nini; Li, Lain-Jong ( 0000-0002-4059-7783 ) ; Ooi, Boon S. ( 0000-0001-9606-5578 )
Abstract:
We study the band discontinuity at the GaN/single-layer (SL) WSe2 heterointerface. The GaN thin layer is epitaxially grown by molecular beam epitaxy on chemically vapor deposited SL-WSe2/c-sapphire. We confirm that the WSe2 was formed as an SL from structural and optical analyses using atomic force microscopy, scanning transmission electron microscopy, micro-Raman, absorbance, and microphotoluminescence spectra. The determination of band offset parameters at the GaN/SL-WSe2 heterojunction is obtained by high-resolution X-ray photoelectron spectroscopy, electron affinities, and the electronic bandgap values of SL-WSe2 and GaN. The valence band and conduction band offset values are determined to be 2.25 ± 0.15 and 0.80 ± 0.15 eV, respectively, with type II band alignment. The band alignment parameters determined here provide a route toward the integration of group III nitride semiconducting materials with transition metal dichalcogenides (TMDs) for designing and modeling of their heterojunction-based electronic and optoelectronic devices.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Imaging and Characterization Core Lab; Photonics Laboratory; Physical Sciences and Engineering (PSE) Division
Citation:
Tangi M, Mishra P, Tseng C-C, Ng TK, Hedhili MN, et al. (2017) Band Alignment at GaN/Single-Layer WSe2 Interface. ACS Applied Materials & Interfaces 9: 9110–9117. Available: http://dx.doi.org/10.1021/acsami.6b15370.
Publisher:
American Chemical Society (ACS)
Journal:
ACS Applied Materials & Interfaces
KAUST Grant Number:
BAS/1/1614-01-01
Issue Date:
21-Feb-2017
DOI:
10.1021/acsami.6b15370
Type:
Article
ISSN:
1944-8244; 1944-8252
Sponsors:
We acknowledge the financial support from King Abdulaziz City for Science and Technology (KACST), Grant No. KACST TIC R2-FP-008, and baseline funding BAS/1/1614-01-01 of the King Abdullah University of Science and Technology (KAUST).
Additional Links:
http://pubs.acs.org/doi/full/10.1021/acsami.6b15370
Appears in Collections:
Articles; Advanced Nanofabrication, Imaging and Characterization Core Lab; Physical Sciences and Engineering (PSE) Division; Photonics Laboratory; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorTangi, Malleswararaoen
dc.contributor.authorMishra, Pawanen
dc.contributor.authorTseng, Chien-Chihen
dc.contributor.authorNg, Tien Kheeen
dc.contributor.authorHedhili, Mohamed N.en
dc.contributor.authorAnjum, Dalaver H.en
dc.contributor.authorAlias, Mohd Sharizalen
dc.contributor.authorWei, Ninien
dc.contributor.authorLi, Lain-Jongen
dc.contributor.authorOoi, Boon S.en
dc.date.accessioned2017-04-13T11:51:00Z-
dc.date.available2017-04-13T11:51:00Z-
dc.date.issued2017-02-21en
dc.identifier.citationTangi M, Mishra P, Tseng C-C, Ng TK, Hedhili MN, et al. (2017) Band Alignment at GaN/Single-Layer WSe2 Interface. ACS Applied Materials & Interfaces 9: 9110–9117. Available: http://dx.doi.org/10.1021/acsami.6b15370.en
dc.identifier.issn1944-8244en
dc.identifier.issn1944-8252en
dc.identifier.doi10.1021/acsami.6b15370en
dc.identifier.urihttp://hdl.handle.net/10754/623191-
dc.description.abstractWe study the band discontinuity at the GaN/single-layer (SL) WSe2 heterointerface. The GaN thin layer is epitaxially grown by molecular beam epitaxy on chemically vapor deposited SL-WSe2/c-sapphire. We confirm that the WSe2 was formed as an SL from structural and optical analyses using atomic force microscopy, scanning transmission electron microscopy, micro-Raman, absorbance, and microphotoluminescence spectra. The determination of band offset parameters at the GaN/SL-WSe2 heterojunction is obtained by high-resolution X-ray photoelectron spectroscopy, electron affinities, and the electronic bandgap values of SL-WSe2 and GaN. The valence band and conduction band offset values are determined to be 2.25 ± 0.15 and 0.80 ± 0.15 eV, respectively, with type II band alignment. The band alignment parameters determined here provide a route toward the integration of group III nitride semiconducting materials with transition metal dichalcogenides (TMDs) for designing and modeling of their heterojunction-based electronic and optoelectronic devices.en
dc.description.sponsorshipWe acknowledge the financial support from King Abdulaziz City for Science and Technology (KACST), Grant No. KACST TIC R2-FP-008, and baseline funding BAS/1/1614-01-01 of the King Abdullah University of Science and Technology (KAUST).en
dc.publisherAmerican Chemical Society (ACS)en
dc.relation.urlhttp://pubs.acs.org/doi/full/10.1021/acsami.6b15370en
dc.subjectGanen
dc.subjectMolecular Beam Epitaxyen
dc.subjectBand Alignmenten
dc.subjectHrxpsen
dc.subjectSingle Layer Wse2en
dc.subject3D/2d Heterojunctionen
dc.titleBand Alignment at GaN/Single-Layer WSe2 Interfaceen
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentImaging and Characterization Core Laben
dc.contributor.departmentPhotonics Laboratoryen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalACS Applied Materials & Interfacesen
kaust.authorTangi, Malleswararaoen
kaust.authorMishra, Pawanen
kaust.authorTseng, Chien-Chihen
kaust.authorNg, Tien Kheeen
kaust.authorHedhili, Mohamed N.en
kaust.authorAnjum, Dalaver H.en
kaust.authorAlias, Mohd Sharizalen
kaust.authorWei, Ninien
kaust.authorLi, Lain-Jongen
kaust.authorOoi, Boon S.en
kaust.grant.numberBAS/1/1614-01-01en
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