High gain semiconductor optical amplifier — Laser diode at visible wavelength

Handle URI:
http://hdl.handle.net/10754/623176
Title:
High gain semiconductor optical amplifier — Laser diode at visible wavelength
Authors:
Shen, Chao; Lee, Changmin; Ng, Tien Khee ( 0000-0002-1480-6975 ) ; Nakamura, Shuji; Speck, James S.; DenBaars, Steven P.; Alyamani, Ahmed Y.; El-Desouki, Munir M.; Ooi, Boon S. ( 0000-0001-9606-5578 )
Abstract:
We reported on the first experimental demonstration of a two-section semipolar InGaN-based laser diode with monolithically integrated semiconductor optical amplifier (SOA-LD). The onset of amplification effect was measured at 4V SOA bias (VSOA). The SOA-LD shows a large gain of 5.32 dB at Vsoa = 6 V.
KAUST Department:
Photonics Laboratory
Citation:
Shen C, Lee C, Ng TK, Nakamura S, Speck JS, et al. (2016) High gain semiconductor optical amplifier — Laser diode at visible wavelength. 2016 IEEE International Electron Devices Meeting (IEDM). Available: http://dx.doi.org/10.1109/IEDM.2016.7838473.
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Journal:
2016 IEEE International Electron Devices Meeting (IEDM)
KAUST Grant Number:
BAS/1/1614-01-01
Conference/Event name:
62nd IEEE International Electron Devices Meeting, IEDM 2016
Issue Date:
7-Feb-2017
DOI:
10.1109/IEDM.2016.7838473
Type:
Conference Paper
Sponsors:
The authors gratefully acknowledge the funding support from King Abdulaziz City for Science and Technology (KACST) Technology Innovation Center (TIC) for Solid State Lighting (KACST TIC R2-FP-008), KACST-KAUST-UCSB Solid-State Lighting Program, and King Abdullah University of Science and Technology (KAUST) (BAS/1/1614-01-01).
Additional Links:
http://ieeexplore.ieee.org/document/7838473/
Appears in Collections:
Conference Papers; Photonics Laboratory

Full metadata record

DC FieldValue Language
dc.contributor.authorShen, Chaoen
dc.contributor.authorLee, Changminen
dc.contributor.authorNg, Tien Kheeen
dc.contributor.authorNakamura, Shujien
dc.contributor.authorSpeck, James S.en
dc.contributor.authorDenBaars, Steven P.en
dc.contributor.authorAlyamani, Ahmed Y.en
dc.contributor.authorEl-Desouki, Munir M.en
dc.contributor.authorOoi, Boon S.en
dc.date.accessioned2017-04-13T11:50:59Z-
dc.date.available2017-04-13T11:50:59Z-
dc.date.issued2017-02-07en
dc.identifier.citationShen C, Lee C, Ng TK, Nakamura S, Speck JS, et al. (2016) High gain semiconductor optical amplifier — Laser diode at visible wavelength. 2016 IEEE International Electron Devices Meeting (IEDM). Available: http://dx.doi.org/10.1109/IEDM.2016.7838473.en
dc.identifier.doi10.1109/IEDM.2016.7838473en
dc.identifier.urihttp://hdl.handle.net/10754/623176-
dc.description.abstractWe reported on the first experimental demonstration of a two-section semipolar InGaN-based laser diode with monolithically integrated semiconductor optical amplifier (SOA-LD). The onset of amplification effect was measured at 4V SOA bias (VSOA). The SOA-LD shows a large gain of 5.32 dB at Vsoa = 6 V.en
dc.description.sponsorshipThe authors gratefully acknowledge the funding support from King Abdulaziz City for Science and Technology (KACST) Technology Innovation Center (TIC) for Solid State Lighting (KACST TIC R2-FP-008), KACST-KAUST-UCSB Solid-State Lighting Program, and King Abdullah University of Science and Technology (KAUST) (BAS/1/1614-01-01).en
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.relation.urlhttp://ieeexplore.ieee.org/document/7838473/en
dc.titleHigh gain semiconductor optical amplifier — Laser diode at visible wavelengthen
dc.typeConference Paperen
dc.contributor.departmentPhotonics Laboratoryen
dc.identifier.journal2016 IEEE International Electron Devices Meeting (IEDM)en
dc.conference.date2016-12-03 to 2016-12-07en
dc.conference.name62nd IEEE International Electron Devices Meeting, IEDM 2016en
dc.conference.locationSan Francisco, CA, USAen
dc.contributor.institutionMaterials Department, University of California Santa Barbara, Santa Barbara (UCSB), CA 93106, United States of Americaen
dc.contributor.institutionKing Abdulaziz City for Science and Technology (KACST), Riyadh 11442, Saudi Arabiaen
kaust.authorShen, Chaoen
kaust.authorNg, Tien Kheeen
kaust.authorOoi, Boon S.en
kaust.grant.numberBAS/1/1614-01-01en
All Items in KAUST are protected by copyright, with all rights reserved, unless otherwise indicated.