High-performance InGaN/GaN Quantum-Disks-in-Nanowires Light-emitters for Monolithic Metal-Optoelectronics

Handle URI:
http://hdl.handle.net/10754/623167
Title:
High-performance InGaN/GaN Quantum-Disks-in-Nanowires Light-emitters for Monolithic Metal-Optoelectronics
Authors:
Zhao, Chao ( 0000-0002-9582-1068 ) ; Ng, Tien Khee ( 0000-0002-1480-6975 ) ; Wei, Nini; Janjua, Bilal ( 0000-0001-9974-9879 ) ; Elafandy, Rami T. ( 0000-0002-8529-2967 ) ; Prabaswara, Aditya; Shen, Chao; Consiglio, Giuseppe B.; Albadri, Abdulrahman; Alyamani, Ahmed Y.; El-Desouki, Munir M.; Ooi, Boon S. ( 0000-0001-9606-5578 )
Abstract:
The first droop-free, reliable, and high-power InGaN/GaN quantum-disks-in-nanowires light-emitting diode on molybdenum substrates was demonstrated. The high performance was achieved through the epitaxial growth of high-quality nanowires on the all-metal stack of TiN/Ti/Mo.
KAUST Department:
Photonics Laboratory; Imaging and Characterization Core Lab
Citation:
Zhao C, Ng T, Wei N, Janjua B, ElAfandy RT, et al. (2016) High-performance InGaN/GaN Quantum-Disks-in-Nanowires Light-emitters for Monolithic Metal-Optoelectronics. Asia Communications and Photonics Conference 2016. Available: http://dx.doi.org/10.1364/acpc.2016.as1f.6.
Publisher:
The Optical Society
Journal:
Asia Communications and Photonics Conference 2016
KAUST Grant Number:
BAS/1/1614-01-01
Conference/Event name:
Asia Communications and Photonics Conference, ACPC 2016
Issue Date:
21-Nov-2016
DOI:
10.1364/acpc.2016.as1f.6
Type:
Conference Paper
Sponsors:
The authors acknowledge funding support from King Abdulaziz City for Science and Technology (KACST) Technology Innovation Center (TIC) for Solid State Lighting (KACST TIC R2-FP-008), and KAUST baseline funding (BAS/1/1614-01-01).
Additional Links:
https://www.osapublishing.org/abstract.cfm?URI=ACPC-2016-AS1F.6
Appears in Collections:
Conference Papers; Advanced Nanofabrication, Imaging and Characterization Core Lab; Photonics Laboratory

Full metadata record

DC FieldValue Language
dc.contributor.authorZhao, Chaoen
dc.contributor.authorNg, Tien Kheeen
dc.contributor.authorWei, Ninien
dc.contributor.authorJanjua, Bilalen
dc.contributor.authorElafandy, Rami T.en
dc.contributor.authorPrabaswara, Adityaen
dc.contributor.authorShen, Chaoen
dc.contributor.authorConsiglio, Giuseppe B.en
dc.contributor.authorAlbadri, Abdulrahmanen
dc.contributor.authorAlyamani, Ahmed Y.en
dc.contributor.authorEl-Desouki, Munir M.en
dc.contributor.authorOoi, Boon S.en
dc.date.accessioned2017-04-13T11:50:58Z-
dc.date.available2017-04-13T11:50:58Z-
dc.date.issued2016-11-21en
dc.identifier.citationZhao C, Ng T, Wei N, Janjua B, ElAfandy RT, et al. (2016) High-performance InGaN/GaN Quantum-Disks-in-Nanowires Light-emitters for Monolithic Metal-Optoelectronics. Asia Communications and Photonics Conference 2016. Available: http://dx.doi.org/10.1364/acpc.2016.as1f.6.en
dc.identifier.doi10.1364/acpc.2016.as1f.6en
dc.identifier.urihttp://hdl.handle.net/10754/623167-
dc.description.abstractThe first droop-free, reliable, and high-power InGaN/GaN quantum-disks-in-nanowires light-emitting diode on molybdenum substrates was demonstrated. The high performance was achieved through the epitaxial growth of high-quality nanowires on the all-metal stack of TiN/Ti/Mo.en
dc.description.sponsorshipThe authors acknowledge funding support from King Abdulaziz City for Science and Technology (KACST) Technology Innovation Center (TIC) for Solid State Lighting (KACST TIC R2-FP-008), and KAUST baseline funding (BAS/1/1614-01-01).en
dc.publisherThe Optical Societyen
dc.relation.urlhttps://www.osapublishing.org/abstract.cfm?URI=ACPC-2016-AS1F.6en
dc.titleHigh-performance InGaN/GaN Quantum-Disks-in-Nanowires Light-emitters for Monolithic Metal-Optoelectronicsen
dc.typeConference Paperen
dc.contributor.departmentPhotonics Laboratoryen
dc.contributor.departmentImaging and Characterization Core Laben
dc.identifier.journalAsia Communications and Photonics Conference 2016en
dc.conference.date2016-11-02 to 2016-11-05en
dc.conference.nameAsia Communications and Photonics Conference, ACPC 2016en
dc.conference.locationWuhan, CHNen
dc.contributor.institutionNational Center for Nanotechnology, King Abdulaziz City for Science and Technology (KACST), Riyadh 11442, Saudi Arabiaen
kaust.authorZhao, Chaoen
kaust.authorNg, Tien Kheeen
kaust.authorWei, Ninien
kaust.authorJanjua, Bilalen
kaust.authorElafandy, Rami T.en
kaust.authorPrabaswara, Adityaen
kaust.authorShen, Chaoen
kaust.authorConsiglio, Giuseppe B.en
kaust.authorOoi, Boon S.en
kaust.grant.numberBAS/1/1614-01-01en
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