Transparent Memory For Harsh Electronics

Handle URI:
http://hdl.handle.net/10754/623116
Title:
Transparent Memory For Harsh Electronics
Authors:
Ho, C. H.; Duran Retamal, Jose Ramon; Yang, P. K.; Lee, C. P.; Tsai, M. L.; Kang, C. F.; He, Jr-Hau ( 0000-0003-1886-9241 )
Abstract:
As a new class of non-volatile memory, resistive random access memory (RRAM) offers not only superior electronic characteristics, but also advanced functionalities, such as transparency and radiation hardness. However, the environmental tolerance of RRAM is material-dependent, and therefore the materials used must be chosen carefully in order to avoid instabilities and performance degradation caused by the detrimental effects arising from environmental gases and ionizing radiation. In this work, we demonstrate that AlN-based RRAM displays excellent performance and environmental stability, with no significant degradation to the resistance ratio over a 100-cycle endurance test. Moreover, transparent RRAM (TRRAM) based on AlN also performs reliably under four different harsh environmental conditions and 2 MeV proton irradiation fluences, ranging from 1011 to 1015 cm-2. These findings not only provide a guideline for TRRAM design, but also demonstrate the promising applicability of AlN TRRAM for future transparent harsh electronics.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Citation:
Ho CH, Retamal JRD, Yang PK, Lee CP, Tsai ML, et al. (2017) Transparent Memory For Harsh Electronics. Scientific Reports 7: 44429. Available: http://dx.doi.org/10.1038/srep44429.
Publisher:
Springer Nature
Journal:
Scientific Reports
Issue Date:
14-Mar-2017
DOI:
10.1038/srep44429
Type:
Article
ISSN:
2045-2322
Sponsors:
Jr-Hau He is grateful for the baseline funding of KAUST.
Additional Links:
http://www.nature.com/articles/srep44429
Appears in Collections:
Articles; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorHo, C. H.en
dc.contributor.authorDuran Retamal, Jose Ramonen
dc.contributor.authorYang, P. K.en
dc.contributor.authorLee, C. P.en
dc.contributor.authorTsai, M. L.en
dc.contributor.authorKang, C. F.en
dc.contributor.authorHe, Jr-Hauen
dc.date.accessioned2017-04-10T07:49:52Z-
dc.date.available2017-04-10T07:49:52Z-
dc.date.issued2017-03-14en
dc.identifier.citationHo CH, Retamal JRD, Yang PK, Lee CP, Tsai ML, et al. (2017) Transparent Memory For Harsh Electronics. Scientific Reports 7: 44429. Available: http://dx.doi.org/10.1038/srep44429.en
dc.identifier.issn2045-2322en
dc.identifier.doi10.1038/srep44429en
dc.identifier.urihttp://hdl.handle.net/10754/623116-
dc.description.abstractAs a new class of non-volatile memory, resistive random access memory (RRAM) offers not only superior electronic characteristics, but also advanced functionalities, such as transparency and radiation hardness. However, the environmental tolerance of RRAM is material-dependent, and therefore the materials used must be chosen carefully in order to avoid instabilities and performance degradation caused by the detrimental effects arising from environmental gases and ionizing radiation. In this work, we demonstrate that AlN-based RRAM displays excellent performance and environmental stability, with no significant degradation to the resistance ratio over a 100-cycle endurance test. Moreover, transparent RRAM (TRRAM) based on AlN also performs reliably under four different harsh environmental conditions and 2 MeV proton irradiation fluences, ranging from 1011 to 1015 cm-2. These findings not only provide a guideline for TRRAM design, but also demonstrate the promising applicability of AlN TRRAM for future transparent harsh electronics.en
dc.description.sponsorshipJr-Hau He is grateful for the baseline funding of KAUST.en
dc.publisherSpringer Natureen
dc.relation.urlhttp://www.nature.com/articles/srep44429en
dc.rightsThis work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.en
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.titleTransparent Memory For Harsh Electronicsen
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.identifier.journalScientific Reportsen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionDepartment of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, USA.en
kaust.authorDuran Retamal, Jose Ramonen
kaust.authorYang, P. K.en
kaust.authorLee, C. P.en
kaust.authorTsai, M. L.en
kaust.authorKang, C. F.en
kaust.authorHe, Jr-Hauen
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