Solution-processed p-type copper(I) thiocyanate (CuSCN) for low-voltage flexible thin-film transistors and integrated inverter circuits

Handle URI:
http://hdl.handle.net/10754/623105
Title:
Solution-processed p-type copper(I) thiocyanate (CuSCN) for low-voltage flexible thin-film transistors and integrated inverter circuits
Authors:
Petti, Luisa; Pattanasattayavong, Pichaya ( 0000-0001-6374-1840 ) ; Lin, Yen-Hung; Münzenrieder, Niko ( 0000-0003-4653-5927 ) ; Cantarella, Giuseppe; Yaacobi-Gross, Nir; Yan, Feng; Tröster, Gerhard; Anthopoulos, Thomas D. ( 0000-0002-0978-8813 )
Abstract:
We report on low operating voltage thin-film transistors (TFTs) and integrated inverters based on copper(I) thiocyanate (CuSCN) layers processed from solution at low temperature on free-standing plastic foils. As-fabricated coplanar bottom-gate and staggered top-gate TFTs exhibit hole-transporting characteristics with average mobility values of 0.0016 cm2 V−1 s−1 and 0.013 cm2 V−1 s−1, respectively, current on/off ratio in the range 102–104, and maximum operating voltages between −3.5 and −10 V, depending on the gate dielectric employed. The promising TFT characteristics enable fabrication of unipolar NOT gates on flexible free-standing plastic substrates with voltage gain of 3.4 at voltages as low as −3.5 V. Importantly, discrete CuSCN transistors and integrated logic inverters remain fully functional even when mechanically bent to a tensile radius of 4 mm, demonstrating the potential of the technology for flexible electronics.
KAUST Department:
Materials Science and Engineering Program; Physical Sciences and Engineering (PSE) Division
Citation:
Petti L, Pattanasattayavong P, Lin Y-H, Münzenrieder N, Cantarella G, et al. (2017) Solution-processed p-type copper(I) thiocyanate (CuSCN) for low-voltage flexible thin-film transistors and integrated inverter circuits. Applied Physics Letters 110: 113504. Available: http://dx.doi.org/10.1063/1.4978531.
Publisher:
AIP Publishing
Journal:
Applied Physics Letters
Issue Date:
17-Mar-2017
DOI:
10.1063/1.4978531
Type:
Article
ISSN:
0003-6951; 1077-3118
Sponsors:
The authors would like to acknowledge N. Wijeyasinghe from Imperial College London for her support during the device and circuit fabrication and characterization.
Additional Links:
http://aip.scitation.org/doi/10.1063/1.4978531
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorPetti, Luisaen
dc.contributor.authorPattanasattayavong, Pichayaen
dc.contributor.authorLin, Yen-Hungen
dc.contributor.authorMünzenrieder, Nikoen
dc.contributor.authorCantarella, Giuseppeen
dc.contributor.authorYaacobi-Gross, Niren
dc.contributor.authorYan, Fengen
dc.contributor.authorTröster, Gerharden
dc.contributor.authorAnthopoulos, Thomas D.en
dc.date.accessioned2017-04-10T07:49:51Z-
dc.date.available2017-04-10T07:49:51Z-
dc.date.issued2017-03-17en
dc.identifier.citationPetti L, Pattanasattayavong P, Lin Y-H, Münzenrieder N, Cantarella G, et al. (2017) Solution-processed p-type copper(I) thiocyanate (CuSCN) for low-voltage flexible thin-film transistors and integrated inverter circuits. Applied Physics Letters 110: 113504. Available: http://dx.doi.org/10.1063/1.4978531.en
dc.identifier.issn0003-6951en
dc.identifier.issn1077-3118en
dc.identifier.doi10.1063/1.4978531en
dc.identifier.urihttp://hdl.handle.net/10754/623105-
dc.description.abstractWe report on low operating voltage thin-film transistors (TFTs) and integrated inverters based on copper(I) thiocyanate (CuSCN) layers processed from solution at low temperature on free-standing plastic foils. As-fabricated coplanar bottom-gate and staggered top-gate TFTs exhibit hole-transporting characteristics with average mobility values of 0.0016 cm2 V−1 s−1 and 0.013 cm2 V−1 s−1, respectively, current on/off ratio in the range 102–104, and maximum operating voltages between −3.5 and −10 V, depending on the gate dielectric employed. The promising TFT characteristics enable fabrication of unipolar NOT gates on flexible free-standing plastic substrates with voltage gain of 3.4 at voltages as low as −3.5 V. Importantly, discrete CuSCN transistors and integrated logic inverters remain fully functional even when mechanically bent to a tensile radius of 4 mm, demonstrating the potential of the technology for flexible electronics.en
dc.description.sponsorshipThe authors would like to acknowledge N. Wijeyasinghe from Imperial College London for her support during the device and circuit fabrication and characterization.en
dc.publisherAIP Publishingen
dc.relation.urlhttp://aip.scitation.org/doi/10.1063/1.4978531en
dc.rightsThis article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Applied Physics Letters and may be found at http://doi.org/10.1063/1.4978531.en
dc.titleSolution-processed p-type copper(I) thiocyanate (CuSCN) for low-voltage flexible thin-film transistors and integrated inverter circuitsen
dc.typeArticleen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalApplied Physics Lettersen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionDepartment of Physics and Centre for Plastic Electronics, Blackett Laboratory, Imperial College London, London SW7 2AZ, United Kingdomen
dc.contributor.institutionElectronics Laboratory, Swiss Federal Institute of Technology Zurich, Gloriastrasse 35, 8092 Zurich, Switzerlanden
dc.contributor.institutionDepartment of Materials Science and Engineering, School of Molecular Science and Engineering, Vidyasirimedhi Institute of Science and Technology (VISTEC), Rayong 21210, Thailanden
dc.contributor.institutionSensor Technology Research Center, School of Engineering and Informatics, University of Sussex, Falmer, Brighton BN1 9RH, United Kingdomen
dc.contributor.institutionDepartment of Applied Physics and Materials Research Centre, The Hong Kong Polytechnic University, Hong Kong, Chinaen
kaust.authorAnthopoulos, Thomas D.en
All Items in KAUST are protected by copyright, with all rights reserved, unless otherwise indicated.