Modulation-Doped In2O3/ZnO Heterojunction Transistors Processed from Solution

Handle URI:
http://hdl.handle.net/10754/623020
Title:
Modulation-Doped In2O3/ZnO Heterojunction Transistors Processed from Solution
Authors:
Khim, Dongyoon; Lin, Yen-Hung; Nam, Sungho; Faber, Hendrik; Tetzner, Kornelius; Li, Ruipeng; Zhang, Qiang; Li, Jun; Zhang, Xixiang ( 0000-0002-3478-6414 ) ; Anthopoulos, Thomas D. ( 0000-0002-0978-8813 )
Abstract:
This paper reports the controlled growth of atomically sharp In2 O3 /ZnO and In2 O3 /Li-doped ZnO (In2 O3 /Li-ZnO) heterojunctions via spin-coating at 200 °C and assesses their application in n-channel thin-film transistors (TFTs). It is shown that addition of Li in ZnO leads to n-type doping and allows for the accurate tuning of its Fermi energy. In the case of In2 O3 /ZnO heterojunctions, presence of the n-doped ZnO layer results in an increased amount of electrons being transferred from its conduction band minimum to that of In2 O3 over the interface, in a process similar to modulation doping. Electrical characterization reveals the profound impact of the presence of the n-doped ZnO layer on the charge transport properties of the isotype In2 O3 /Li-ZnO heterojunctions as well as on the operating characteristics of the resulting TFTs. By judicious optimization of the In2 O3 /Li-ZnO interface microstructure, and Li concentration, significant enhancement in both the electron mobility and TFT bias stability is demonstrated.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Khim D, Lin Y-H, Nam S, Faber H, Tetzner K, et al. (2017) Modulation-Doped In2O3/ZnO Heterojunction Transistors Processed from Solution. Advanced Materials: 1605837. Available: http://dx.doi.org/10.1002/adma.201605837.
Publisher:
Wiley-Blackwell
Journal:
Advanced Materials
Issue Date:
15-Mar-2017
DOI:
10.1002/adma.201605837
Type:
Article
ISSN:
0935-9648
Sponsors:
D.K., Y.-H.L., H.F., and T.D.A. are grateful to the European Research Council (ERC) AMPRO Project No. 280221 for financial support. Q.Z., J.L., and X.Z., are grateful to KAUST for the financial support. CHESS was supported by the NSF & NIH/NIGMS via NSF Award DMR-1332208.
Additional Links:
http://onlinelibrary.wiley.com/doi/10.1002/adma.201605837/full
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorKhim, Dongyoonen
dc.contributor.authorLin, Yen-Hungen
dc.contributor.authorNam, Sunghoen
dc.contributor.authorFaber, Hendriken
dc.contributor.authorTetzner, Korneliusen
dc.contributor.authorLi, Ruipengen
dc.contributor.authorZhang, Qiangen
dc.contributor.authorLi, Junen
dc.contributor.authorZhang, Xixiangen
dc.contributor.authorAnthopoulos, Thomas D.en
dc.date.accessioned2017-03-19T13:24:06Z-
dc.date.available2017-03-19T13:24:06Z-
dc.date.issued2017-03-15en
dc.identifier.citationKhim D, Lin Y-H, Nam S, Faber H, Tetzner K, et al. (2017) Modulation-Doped In2O3/ZnO Heterojunction Transistors Processed from Solution. Advanced Materials: 1605837. Available: http://dx.doi.org/10.1002/adma.201605837.en
dc.identifier.issn0935-9648en
dc.identifier.doi10.1002/adma.201605837en
dc.identifier.urihttp://hdl.handle.net/10754/623020-
dc.description.abstractThis paper reports the controlled growth of atomically sharp In2 O3 /ZnO and In2 O3 /Li-doped ZnO (In2 O3 /Li-ZnO) heterojunctions via spin-coating at 200 °C and assesses their application in n-channel thin-film transistors (TFTs). It is shown that addition of Li in ZnO leads to n-type doping and allows for the accurate tuning of its Fermi energy. In the case of In2 O3 /ZnO heterojunctions, presence of the n-doped ZnO layer results in an increased amount of electrons being transferred from its conduction band minimum to that of In2 O3 over the interface, in a process similar to modulation doping. Electrical characterization reveals the profound impact of the presence of the n-doped ZnO layer on the charge transport properties of the isotype In2 O3 /Li-ZnO heterojunctions as well as on the operating characteristics of the resulting TFTs. By judicious optimization of the In2 O3 /Li-ZnO interface microstructure, and Li concentration, significant enhancement in both the electron mobility and TFT bias stability is demonstrated.en
dc.description.sponsorshipD.K., Y.-H.L., H.F., and T.D.A. are grateful to the European Research Council (ERC) AMPRO Project No. 280221 for financial support. Q.Z., J.L., and X.Z., are grateful to KAUST for the financial support. CHESS was supported by the NSF & NIH/NIGMS via NSF Award DMR-1332208.en
dc.publisherWiley-Blackwellen
dc.relation.urlhttp://onlinelibrary.wiley.com/doi/10.1002/adma.201605837/fullen
dc.rightsThis is the peer reviewed version of the following article: Modulation-Doped In2O3/ZnO Heterojunction Transistors Processed from Solution, which has been published in final form at http://doi.org/10.1002/adma.201605837. This article may be used for non-commercial purposes in accordance With Wiley Terms and Conditions for self-archiving.en
dc.subjectMetal oxidesen
dc.subjectSemiconductorsen
dc.subjectSolution Processingen
dc.subjectElectron Mobilityen
dc.subjectThin Film Transistorsen
dc.subjectModulation Dopingen
dc.subjectHeterojunction Transistorsen
dc.titleModulation-Doped In2O3/ZnO Heterojunction Transistors Processed from Solutionen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalAdvanced Materialsen
dc.eprint.versionPost-printen
dc.contributor.institutionDepartment of Physics and Centre for Plastic Electronics; Imperial College London; South Kensington London SW7 2AZ UKen
dc.contributor.institutionCornell High Energy Synchrotron Source; Wilson Laboratory Cornell University; Ithaca NY 14853 USAen
kaust.authorZhang, Qiangen
kaust.authorLi, Junen
kaust.authorZhang, Xixiangen
kaust.authorAnthopoulos, Thomas D.en
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