100-nm thick single-phase wurtzite BAlN films with boron contents over 10%

Handle URI:
http://hdl.handle.net/10754/623013
Title:
100-nm thick single-phase wurtzite BAlN films with boron contents over 10%
Authors:
Li, Xiaohang ( 0000-0002-4434-365X ) ; Wang, Shuo; Liu, Hanxiao; Ponce, Fernando A.; Detchprohm, Theeradetch; Dupuis, Russell D.
Abstract:
Growing thicker BAlN films while maintaining single-phase wurtzite structure and boron content over 10% has been challenging. In this study, we report on the growth of 100 nm-thick single-phase wurtzite BAlN films with boron contents up to 14.4% by MOCVD. Flow-modulated epitaxy was employed to increase diffusion length of group-III atoms and reduce parasitic reactions between the metalorganics and NH3. A large growth efficiency of ∼2000 μm mol−1 was achieved as a result. Small B/III ratios up to 17% in conjunction with high temperatures up to 1010 °C were utilized to prevent formation of the cubic phase and maintain wurtzite structure.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Citation:
Li X, Wang S, Liu H, Ponce FA, Detchprohm T, et al. (2017) 100-nm thick single-phase wurtzite BAlN films with boron contents over 10%. physica status solidi (b): 1600699. Available: http://dx.doi.org/10.1002/pssb.201600699.
Publisher:
Wiley-Blackwell
Journal:
physica status solidi (b)
Issue Date:
11-Jan-2017
DOI:
10.1002/pssb.201600699
Type:
Article
ISSN:
0370-1972
Sponsors:
This work was supported by the U.S. National Science Foundation under DMR-1410874. RDD acknowledges support of the Steve W. Chaddick Endowed Chair in Electro-Optics and the Georgia Research Alliance. XL acknowledges support of the KAUST startup and baseline funding. The authors acknowledge beneficial discussion of RBS data with Dr. Daniel Tseng from EAG Laboratories.
Additional Links:
http://onlinelibrary.wiley.com/doi/10.1002/pssb.201600699/full
Appears in Collections:
Articles; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorLi, Xiaohangen
dc.contributor.authorWang, Shuoen
dc.contributor.authorLiu, Hanxiaoen
dc.contributor.authorPonce, Fernando A.en
dc.contributor.authorDetchprohm, Theeradetchen
dc.contributor.authorDupuis, Russell D.en
dc.date.accessioned2017-03-16T11:14:32Z-
dc.date.available2017-03-16T11:14:32Z-
dc.date.issued2017-01-11en
dc.identifier.citationLi X, Wang S, Liu H, Ponce FA, Detchprohm T, et al. (2017) 100-nm thick single-phase wurtzite BAlN films with boron contents over 10%. physica status solidi (b): 1600699. Available: http://dx.doi.org/10.1002/pssb.201600699.en
dc.identifier.issn0370-1972en
dc.identifier.doi10.1002/pssb.201600699en
dc.identifier.urihttp://hdl.handle.net/10754/623013-
dc.description.abstractGrowing thicker BAlN films while maintaining single-phase wurtzite structure and boron content over 10% has been challenging. In this study, we report on the growth of 100 nm-thick single-phase wurtzite BAlN films with boron contents up to 14.4% by MOCVD. Flow-modulated epitaxy was employed to increase diffusion length of group-III atoms and reduce parasitic reactions between the metalorganics and NH3. A large growth efficiency of ∼2000 μm mol−1 was achieved as a result. Small B/III ratios up to 17% in conjunction with high temperatures up to 1010 °C were utilized to prevent formation of the cubic phase and maintain wurtzite structure.en
dc.description.sponsorshipThis work was supported by the U.S. National Science Foundation under DMR-1410874. RDD acknowledges support of the Steve W. Chaddick Endowed Chair in Electro-Optics and the Georgia Research Alliance. XL acknowledges support of the KAUST startup and baseline funding. The authors acknowledge beneficial discussion of RBS data with Dr. Daniel Tseng from EAG Laboratories.en
dc.publisherWiley-Blackwellen
dc.relation.urlhttp://onlinelibrary.wiley.com/doi/10.1002/pssb.201600699/fullen
dc.title100-nm thick single-phase wurtzite BAlN films with boron contents over 10%en
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.identifier.journalphysica status solidi (b)en
dc.contributor.institutionCenter for Compound Semiconductors; School of Electrical and Computer Engineering; Georgia Institute of Technology; Atlanta Georgia 30332 USAen
dc.contributor.institutionDepartment of Physics; Arizona State University; Tempe Arizona 85287 USAen
kaust.authorLi, Xiaohangen
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