Semipolar III–nitride quantum well waveguide photodetector integrated with laser diode for on-chip photonic system

Handle URI:
http://hdl.handle.net/10754/622986
Title:
Semipolar III–nitride quantum well waveguide photodetector integrated with laser diode for on-chip photonic system
Authors:
Shen, Chao; Lee, Changmin; Stegenburgs, Edgars ( 0000-0003-0156-5487 ) ; Lerma, Jorge Holguin; Ng, Tien Khee ( 0000-0002-1480-6975 ) ; Nakamura, Shuji; DenBaars, Steven P.; Alyamani, Ahmed Y.; El-Desouki, Munir M.; Ooi, Boon S. ( 0000-0001-9606-5578 )
Abstract:
A high-performance waveguide photodetector (WPD) integrated with a laser diode (LD) sharing the single InGaN/GaN quantum well active region is demonstrated on a semipolar GaN substrate. The photocurrent of the integrated WPD is effectively tuned by the emitted optical power from the LD. The responsivity ranges from 0.018 to 0.051 A/W with increasing reverse bias from 0 to 10 V. The WPD shows a large 3 dB modulation bandwidth of 230 MHz. The integrated device, being used for power monitoring and on-chip communication, paves the way towards the eventual realization of a III–nitride on-chip photonic system.
KAUST Department:
Photonics Laboratory
Citation:
Shen C, Lee C, Stegenburgs E, Lerma JH, Ng TK, et al. (2017) Semipolar III–nitride quantum well waveguide photodetector integrated with laser diode for on-chip photonic system. Applied Physics Express 10: 042201. Available: http://dx.doi.org/10.7567/apex.10.042201.
Publisher:
Japan Society of Applied Physics
Journal:
Applied Physics Express
KAUST Grant Number:
BAS/1/1614-01-01
Issue Date:
28-Feb-2017
DOI:
10.7567/apex.10.042201
Type:
Article
ISSN:
1882-0778; 1882-0786
Sponsors:
This work was supported by King Abdullah University of Science and Technology (KAUST) baseline funding (BAS/1/1614-01-01), King Abdulaziz City for Science and Technology (KACST) Technology Innovation Center (TIC) for Solid State Lighting (KACST TIC R2-FP-008), and KACST-KAUST-UCSB Solid-State Lighting Program.
Additional Links:
http://iopscience.iop.org/article/10.7567/APEX.10.042201/meta
Appears in Collections:
Articles; Photonics Laboratory

Full metadata record

DC FieldValue Language
dc.contributor.authorShen, Chaoen
dc.contributor.authorLee, Changminen
dc.contributor.authorStegenburgs, Edgarsen
dc.contributor.authorLerma, Jorge Holguinen
dc.contributor.authorNg, Tien Kheeen
dc.contributor.authorNakamura, Shujien
dc.contributor.authorDenBaars, Steven P.en
dc.contributor.authorAlyamani, Ahmed Y.en
dc.contributor.authorEl-Desouki, Munir M.en
dc.contributor.authorOoi, Boon S.en
dc.date.accessioned2017-03-07T13:47:41Z-
dc.date.available2017-03-07T13:47:41Z-
dc.date.issued2017-02-28en
dc.identifier.citationShen C, Lee C, Stegenburgs E, Lerma JH, Ng TK, et al. (2017) Semipolar III–nitride quantum well waveguide photodetector integrated with laser diode for on-chip photonic system. Applied Physics Express 10: 042201. Available: http://dx.doi.org/10.7567/apex.10.042201.en
dc.identifier.issn1882-0778en
dc.identifier.issn1882-0786en
dc.identifier.doi10.7567/apex.10.042201en
dc.identifier.urihttp://hdl.handle.net/10754/622986-
dc.description.abstractA high-performance waveguide photodetector (WPD) integrated with a laser diode (LD) sharing the single InGaN/GaN quantum well active region is demonstrated on a semipolar GaN substrate. The photocurrent of the integrated WPD is effectively tuned by the emitted optical power from the LD. The responsivity ranges from 0.018 to 0.051 A/W with increasing reverse bias from 0 to 10 V. The WPD shows a large 3 dB modulation bandwidth of 230 MHz. The integrated device, being used for power monitoring and on-chip communication, paves the way towards the eventual realization of a III–nitride on-chip photonic system.en
dc.description.sponsorshipThis work was supported by King Abdullah University of Science and Technology (KAUST) baseline funding (BAS/1/1614-01-01), King Abdulaziz City for Science and Technology (KACST) Technology Innovation Center (TIC) for Solid State Lighting (KACST TIC R2-FP-008), and KACST-KAUST-UCSB Solid-State Lighting Program.en
dc.publisherJapan Society of Applied Physicsen
dc.relation.urlhttp://iopscience.iop.org/article/10.7567/APEX.10.042201/metaen
dc.rightsContent from this work may be used under the terms of the Creative Commons Attribution 4.0 license. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.en
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.titleSemipolar III–nitride quantum well waveguide photodetector integrated with laser diode for on-chip photonic systemen
dc.typeArticleen
dc.contributor.departmentPhotonics Laboratoryen
dc.identifier.journalApplied Physics Expressen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionMaterials Department, University of California Santa Barbara (UCSB), Santa Barbara, CA 93106, U.S.A.en
dc.contributor.institutionKing Abdulaziz City for Science and Technology (KACST), Riyadh 11442, Saudi Arabiaen
kaust.authorShen, Chaoen
kaust.authorStegenburgs, Edgarsen
kaust.authorLerma, Jorge Holguinen
kaust.authorNg, Tien Kheeen
kaust.authorOoi, Boon S.en
kaust.grant.numberBAS/1/1614-01-01en
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