Self-planarized quantum-disks nanowires ultraviolet-B emitter utilizing pendeo-epitaxy

Handle URI:
http://hdl.handle.net/10754/622985
Title:
Self-planarized quantum-disks nanowires ultraviolet-B emitter utilizing pendeo-epitaxy
Authors:
Janjua, Bilal ( 0000-0001-9974-9879 ) ; Sun, Haiding; Zhao, Chao ( 0000-0002-9582-1068 ) ; Anjum, Dalaver H.; Wu, Feng; Alhamoud, Abdullah; Li, Xiaohang ( 0000-0002-4434-365X ) ; Albadri, Abdulrahman M; Alyamani, Ahmed Y; El-Desouki , Munir M; Ng, Tien Khee ( 0000-0002-1480-6975 ) ; Ooi, Boon S. ( 0000-0001-9606-5578 )
Abstract:
The growth of self-assembled, vertically oriented and uniform nanowires (NWs) has remained a challenge for efficient light-emitting devices. Here, we demonstrate dislocation-free AlGaN NWs with spontaneous coalescence, which are grown by plasma-assisted molecular beam epitaxy on an n-type doped silicon (100) substrate. A high density of NWs (filling factor > 95%) was achieved under optimized growth conditions, enabling device fabrication without planarization using ultraviolet (UV)-absorbing polymer materials. UV-B (280-320 nm) light-emitting diodes (LEDs), which emit at ~303 nm with a narrow full width at half maximum (FWHM) (~20 nm) of the emission spectrum, are demonstrated using a large active region (“active region/NW length-ratio” ~ 50%) embedded with 15 stacks of AlxGa1-xN/AlyGa1-yN quantum-disks (Qdisks). To improve the carrier injection, a graded layer is introduced at the AlGaN/GaN interfaces on both p- and n-type regions. This work demonstrates a viable approach to easily fabricate ultra-thin, efficient UV optoelectronic devices on low-cost and scalable silicon substrates.
KAUST Department:
Photonics Laboratory; King Abdullah University of Science and Technology (KAUST), Advanced Semiconductor Laboratory, Thuwal 23955-6900, Saudi Arabia; Imaging and Characterization Core Lab
Citation:
Janjua B, Sun H, Zhao C, Anjum DH, Wu F, et al. (2017) Self-planarized quantum-disks nanowires ultraviolet-B emitter utilizing pendeo-epitaxy. Nanoscale. Available: http://dx.doi.org/10.1039/c7nr00006e.
Publisher:
Royal Society of Chemistry (RSC)
Journal:
Nanoscale
KAUST Grant Number:
BAS/1/1614-01-01
Issue Date:
3-Mar-2017
DOI:
10.1039/c7nr00006e
Type:
Article
ISSN:
2040-3364; 2040-3372
Sponsors:
We acknowledge the financial support from King Abdulaziz City for Science and Technology (KACST), Grant No. KACST TIC R2-FP-008. This work was partially supported by the King Abdullah University of Science and Technology (KAUST) baseline funding, BAS/1/1614-01-01.
Additional Links:
http://pubs.rsc.org/en/Content/ArticleLanding/2017/NR/C7NR00006E#!divAbstract
Appears in Collections:
Articles; Advanced Nanofabrication, Imaging and Characterization Core Lab; Photonics Laboratory

Full metadata record

DC FieldValue Language
dc.contributor.authorJanjua, Bilalen
dc.contributor.authorSun, Haidingen
dc.contributor.authorZhao, Chaoen
dc.contributor.authorAnjum, Dalaver H.en
dc.contributor.authorWu, Fengen
dc.contributor.authorAlhamoud, Abdullahen
dc.contributor.authorLi, Xiaohangen
dc.contributor.authorAlbadri, Abdulrahman Men
dc.contributor.authorAlyamani, Ahmed Yen
dc.contributor.authorEl-Desouki , Munir Men
dc.contributor.authorNg, Tien Kheeen
dc.contributor.authorOoi, Boon S.en
dc.date.accessioned2017-03-07T13:47:41Z-
dc.date.available2017-03-07T13:47:41Z-
dc.date.issued2017-03-03en
dc.identifier.citationJanjua B, Sun H, Zhao C, Anjum DH, Wu F, et al. (2017) Self-planarized quantum-disks nanowires ultraviolet-B emitter utilizing pendeo-epitaxy. Nanoscale. Available: http://dx.doi.org/10.1039/c7nr00006e.en
dc.identifier.issn2040-3364en
dc.identifier.issn2040-3372en
dc.identifier.doi10.1039/c7nr00006een
dc.identifier.urihttp://hdl.handle.net/10754/622985-
dc.description.abstractThe growth of self-assembled, vertically oriented and uniform nanowires (NWs) has remained a challenge for efficient light-emitting devices. Here, we demonstrate dislocation-free AlGaN NWs with spontaneous coalescence, which are grown by plasma-assisted molecular beam epitaxy on an n-type doped silicon (100) substrate. A high density of NWs (filling factor > 95%) was achieved under optimized growth conditions, enabling device fabrication without planarization using ultraviolet (UV)-absorbing polymer materials. UV-B (280-320 nm) light-emitting diodes (LEDs), which emit at ~303 nm with a narrow full width at half maximum (FWHM) (~20 nm) of the emission spectrum, are demonstrated using a large active region (“active region/NW length-ratio” ~ 50%) embedded with 15 stacks of AlxGa1-xN/AlyGa1-yN quantum-disks (Qdisks). To improve the carrier injection, a graded layer is introduced at the AlGaN/GaN interfaces on both p- and n-type regions. This work demonstrates a viable approach to easily fabricate ultra-thin, efficient UV optoelectronic devices on low-cost and scalable silicon substrates.en
dc.description.sponsorshipWe acknowledge the financial support from King Abdulaziz City for Science and Technology (KACST), Grant No. KACST TIC R2-FP-008. This work was partially supported by the King Abdullah University of Science and Technology (KAUST) baseline funding, BAS/1/1614-01-01.en
dc.publisherRoyal Society of Chemistry (RSC)en
dc.relation.urlhttp://pubs.rsc.org/en/Content/ArticleLanding/2017/NR/C7NR00006E#!divAbstracten
dc.rightsArchived with thanks to Nanoscaleen
dc.titleSelf-planarized quantum-disks nanowires ultraviolet-B emitter utilizing pendeo-epitaxyen
dc.typeArticleen
dc.contributor.departmentPhotonics Laboratoryen
dc.contributor.departmentKing Abdullah University of Science and Technology (KAUST), Advanced Semiconductor Laboratory, Thuwal 23955-6900, Saudi Arabiaen
dc.contributor.departmentImaging and Characterization Core Laben
dc.identifier.journalNanoscaleen
dc.eprint.versionPost-printen
dc.contributor.institutionNational Center for Nanotechnology, King Abdulaziz City for Science and Technology (KACST), Riyadh, 11442-6086, Kingdom of Saudi Arabiaen
kaust.authorJanjua, Bilalen
kaust.authorSun, Haidingen
kaust.authorZhao, Chaoen
kaust.authorAnjum, Dalaver H.en
kaust.authorWu, Fengen
kaust.authorAlhamoud, Abdullahen
kaust.authorLi, Xiaohangen
kaust.authorNg, Tien Kheeen
kaust.authorOoi, Boon S.en
kaust.grant.numberBAS/1/1614-01-01en
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