Water soluble nano-scale transient material germanium oxide for zero toxic waste based environmentally benign nano-manufacturing

Handle URI:
http://hdl.handle.net/10754/622963
Title:
Water soluble nano-scale transient material germanium oxide for zero toxic waste based environmentally benign nano-manufacturing
Authors:
Almuslem, A. S.; Hanna, Amir ( 0000-0003-4679-366X ) ; Yapici, Tahir; Wehbe, N.; Diallo, Elhadj; Kutbee, Arwa T. ( 0000-0002-1191-0101 ) ; Bahabry, Rabab R. ( 0000-0001-7866-6660 ) ; Hussain, Muhammad Mustafa ( 0000-0003-3279-0441 )
Abstract:
In the recent past, with the advent of transient electronics for mostly implantable and secured electronic applications, the whole field effect transistor structure has been dissolved in a variety of chemicals. Here, we show simple water soluble nano-scale (sub-10 nm) germanium oxide (GeO) as the dissolvable component to remove the functional structures of metal oxide semiconductor devices and then reuse the expensive germanium substrate again for functional device fabrication. This way, in addition to transiency, we also show an environmentally friendly manufacturing process for a complementary metal oxide semiconductor (CMOS) technology. Every year, trillions of complementary metal oxide semiconductor (CMOS) electronics are manufactured and billions are disposed, which extend the harmful impact to our environment. Therefore, this is a key study to show a pragmatic approach for water soluble high performance electronics for environmentally friendly manufacturing and bioresorbable electronic applications.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Electrical Engineering Program; Integrated Disruptive Electronic Applications (IDEA) Lab; Integrated Nanotechnology Lab; Imaging and Characterization Core Lab; Materials Science and Engineering Program; Physical Sciences and Engineering (PSE) Division
Citation:
Almuslem AS, Hanna AN, Yapici T, Wehbe N, Diallo EM, et al. (2017) Water soluble nano-scale transient material germanium oxide for zero toxic waste based environmentally benign nano-manufacturing. Applied Physics Letters 110: 074103. Available: http://dx.doi.org/10.1063/1.4976311.
Publisher:
AIP Publishing
Journal:
Applied Physics Letters
Issue Date:
14-Feb-2017
DOI:
10.1063/1.4976311
Type:
Article
ISSN:
0003-6951; 1077-3118
Sponsors:
This publication is based on the work supported by the King Abdullah University of Science and Technology (KAUST).
Additional Links:
http://aip.scitation.org/doi/10.1063/1.4976311
Appears in Collections:
Articles; Advanced Nanofabrication, Imaging and Characterization Core Lab; Physical Sciences and Engineering (PSE) Division; Electrical Engineering Program; Materials Science and Engineering Program; Integrated Nanotechnology Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorAlmuslem, A. S.en
dc.contributor.authorHanna, Amiren
dc.contributor.authorYapici, Tahiren
dc.contributor.authorWehbe, N.en
dc.contributor.authorDiallo, Elhadjen
dc.contributor.authorKutbee, Arwa T.en
dc.contributor.authorBahabry, Rabab R.en
dc.contributor.authorHussain, Muhammad Mustafaen
dc.date.accessioned2017-03-05T06:13:15Z-
dc.date.available2017-03-05T06:13:15Z-
dc.date.issued2017-02-14en
dc.identifier.citationAlmuslem AS, Hanna AN, Yapici T, Wehbe N, Diallo EM, et al. (2017) Water soluble nano-scale transient material germanium oxide for zero toxic waste based environmentally benign nano-manufacturing. Applied Physics Letters 110: 074103. Available: http://dx.doi.org/10.1063/1.4976311.en
dc.identifier.issn0003-6951en
dc.identifier.issn1077-3118en
dc.identifier.doi10.1063/1.4976311en
dc.identifier.urihttp://hdl.handle.net/10754/622963-
dc.description.abstractIn the recent past, with the advent of transient electronics for mostly implantable and secured electronic applications, the whole field effect transistor structure has been dissolved in a variety of chemicals. Here, we show simple water soluble nano-scale (sub-10 nm) germanium oxide (GeO) as the dissolvable component to remove the functional structures of metal oxide semiconductor devices and then reuse the expensive germanium substrate again for functional device fabrication. This way, in addition to transiency, we also show an environmentally friendly manufacturing process for a complementary metal oxide semiconductor (CMOS) technology. Every year, trillions of complementary metal oxide semiconductor (CMOS) electronics are manufactured and billions are disposed, which extend the harmful impact to our environment. Therefore, this is a key study to show a pragmatic approach for water soluble high performance electronics for environmentally friendly manufacturing and bioresorbable electronic applications.en
dc.description.sponsorshipThis publication is based on the work supported by the King Abdullah University of Science and Technology (KAUST).en
dc.publisherAIP Publishingen
dc.relation.urlhttp://aip.scitation.org/doi/10.1063/1.4976311en
dc.rightsArchived with thanks to Applied Physics Lettersen
dc.titleWater soluble nano-scale transient material germanium oxide for zero toxic waste based environmentally benign nano-manufacturingen
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentIntegrated Disruptive Electronic Applications (IDEA) Laben
dc.contributor.departmentIntegrated Nanotechnology Laben
dc.contributor.departmentImaging and Characterization Core Laben
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalApplied Physics Lettersen
dc.eprint.versionPublisher's Version/PDFen
kaust.authorAlmuslem, A. S.en
kaust.authorHanna, Amiren
kaust.authorYapici, Tahiren
kaust.authorWehbe, N.en
kaust.authorDiallo, Elhadjen
kaust.authorKutbee, Arwa T.en
kaust.authorBahabry, Rabab R.en
kaust.authorHussain, Muhammad Mustafaen
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