GHz modulation enabled using large extinction ratio waveguide-modulator integrated with 404 nm GaN laser diode

Handle URI:
http://hdl.handle.net/10754/622880
Title:
GHz modulation enabled using large extinction ratio waveguide-modulator integrated with 404 nm GaN laser diode
Authors:
Shen, Chao; Lee, Changmin; Ng, Tien Khee ( 0000-0002-1480-6975 ) ; Speck, James S.; Nakamura, Shuji; DenBaars, Steven P.; Alyamani, Ahmed Y.; Eldesouki, Munir M.; Ooi, Boon S. ( 0000-0001-9606-5578 )
Abstract:
A 404-nm emitting InGaN-based laser diode with integrated-waveguide-modulator showing a large extinction ratio of 11.3 dB was demonstrated on semipolar (2021) plane GaN substrate. The device shows a low modulation voltage of −2.5 V and ∼ GHz −3 dB bandwidth, enabling 1.7 Gbps data transmission.
KAUST Department:
Photonics Laboratory
Citation:
Shen C, Lee C, Ng TK, Speck JS, Nakamura S, et al. (2016) GHz modulation enabled using large extinction ratio waveguide-modulator integrated with 404 nm GaN laser diode. 2016 IEEE Photonics Conference (IPC). Available: http://dx.doi.org/10.1109/IPCon.2016.7831077.
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Journal:
2016 IEEE Photonics Conference (IPC)
KAUST Grant Number:
BAS/1/1614-01-01
Issue Date:
30-Jan-2017
DOI:
10.1109/IPCon.2016.7831077
Type:
Conference Paper
Sponsors:
The authors acknowledge funding support from King Abdulaziz City for Science and Technology (KACST) (No. KACST TIC R2-FP-008), KAUST baseline funding (BAS/1/1614-01-01), and KACST-KAUST-UCSB Solid-State Lighting Program.
Additional Links:
http://ieeexplore.ieee.org/document/7831077/
Appears in Collections:
Conference Papers; Photonics Laboratory

Full metadata record

DC FieldValue Language
dc.contributor.authorShen, Chaoen
dc.contributor.authorLee, Changminen
dc.contributor.authorNg, Tien Kheeen
dc.contributor.authorSpeck, James S.en
dc.contributor.authorNakamura, Shujien
dc.contributor.authorDenBaars, Steven P.en
dc.contributor.authorAlyamani, Ahmed Y.en
dc.contributor.authorEldesouki, Munir M.en
dc.contributor.authorOoi, Boon S.en
dc.date.accessioned2017-02-15T07:49:25Z-
dc.date.available2017-02-15T07:49:25Z-
dc.date.issued2017-01-30en
dc.identifier.citationShen C, Lee C, Ng TK, Speck JS, Nakamura S, et al. (2016) GHz modulation enabled using large extinction ratio waveguide-modulator integrated with 404 nm GaN laser diode. 2016 IEEE Photonics Conference (IPC). Available: http://dx.doi.org/10.1109/IPCon.2016.7831077.en
dc.identifier.doi10.1109/IPCon.2016.7831077en
dc.identifier.urihttp://hdl.handle.net/10754/622880-
dc.description.abstractA 404-nm emitting InGaN-based laser diode with integrated-waveguide-modulator showing a large extinction ratio of 11.3 dB was demonstrated on semipolar (2021) plane GaN substrate. The device shows a low modulation voltage of −2.5 V and ∼ GHz −3 dB bandwidth, enabling 1.7 Gbps data transmission.en
dc.description.sponsorshipThe authors acknowledge funding support from King Abdulaziz City for Science and Technology (KACST) (No. KACST TIC R2-FP-008), KAUST baseline funding (BAS/1/1614-01-01), and KACST-KAUST-UCSB Solid-State Lighting Program.en
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.relation.urlhttp://ieeexplore.ieee.org/document/7831077/en
dc.rights(c) 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.en
dc.subjectBandwidthen
dc.subjectDiode lasersen
dc.subjectExtinction ratioen
dc.subjectOptical modulationen
dc.subjectOptical network unitsen
dc.subjectSea measurementsen
dc.titleGHz modulation enabled using large extinction ratio waveguide-modulator integrated with 404 nm GaN laser diodeen
dc.typeConference Paperen
dc.contributor.departmentPhotonics Laboratoryen
dc.identifier.journal2016 IEEE Photonics Conference (IPC)en
dc.eprint.versionPost-printen
dc.contributor.institutionMaterials Department, University of California Santa Barbara, Santa Barbara (UCSB), CA 93106, USAen
dc.contributor.institutionKing Abdulaziz City for Science and Technology (KACST), Riyadh 11442, Saudi Arabiaen
kaust.authorShen, Chaoen
kaust.authorNg, Tien Kheeen
kaust.authorOoi, Boon S.en
kaust.grant.numberBAS/1/1614-01-01en
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