Droop-free AlxGa1-xN/AlyGa1-yN quantum-disks-in-nanowires ultraviolet LED emitting at 337 nm on metal/silicon substrates

Handle URI:
http://hdl.handle.net/10754/622866
Title:
Droop-free AlxGa1-xN/AlyGa1-yN quantum-disks-in-nanowires ultraviolet LED emitting at 337 nm on metal/silicon substrates
Authors:
Janjua, Bilal ( 0000-0001-9974-9879 ) ; Sun, Haiding; Zhao, Chao ( 0000-0002-9582-1068 ) ; Anjum, Dalaver H.; Priante, Davide ( 0000-0003-4540-2188 ) ; Alhamoud, Abdullah A.; Wu, Feng-Yu; Li, Xiaohang ( 0000-0002-4434-365X ) ; Albadri, Abdulrahman M.; Alyamani, Ahmed Y.; El-Desouki, Munir M.; Ng, Tien Khee ( 0000-0002-1480-6975 ) ; Ooi, Boon S. ( 0000-0001-9606-5578 )
Abstract:
Currently the AlGaN-based ultraviolet (UV) solid-state lighting research suffers from numerous challenges. In particular, low internal quantum efficiency, low extraction efficiency, inefficient doping, large polarization fields, and high dislocation density epitaxy constitute bottlenecks in realizing high power devices. Despite the clear advantage of quantum-confinement nanostructure, it has not been widely utilized in AlGaN-based nanowires. Here we utilize the self-assembled nanowires (NWs) with embedding quantum-disks (Qdisks) to mitigate these issues, and achieve UV emission of 337 nm at 32 A/cm (80 mA in 0.5 × 0.5 mm device), a turn-on voltage of ∼5.5 V and droop-free behavior up to 120 A/cm of injection current. The device was grown on a titanium-coated n-type silicon substrate, to improve current injection and heat dissipation. A narrow linewidth of 11.7 nm in the electroluminescence spectrum and a strong wavefunctions overlap factor of 42% confirm strong quantum confinement within uniformly formed AlGaN/AlGaN Qdisks, verified using transmission electron microscopy (TEM). The nitride-based UV nanowires light-emitting diodes (NWs-LEDs) grown on low cost and scalable metal/silicon template substrate, offers a scalable, environment friendly and low cost solution for numerous applications, such as solid-state lighting, spectroscopy, medical science and security.
KAUST Department:
Photonics Laboratory; King Abdullah University of Science and Technology (KAUST), Advanced Semiconductor Laboratory, Thuwal, 23955-6900, Saudi Arabia; Imaging and Characterization Core Lab
Citation:
Janjua B, Sun H, Zhao C, Anjum DH, Priante D, et al. (2017) Droop-free Al_xGa_1-xN/Al_yGa_1-yN quantum-disks-in-nanowires ultraviolet LED emitting at 337 nm on metal/silicon substrates. Optics Express 25: 1381. Available: http://dx.doi.org/10.1364/OE.25.001381.
Publisher:
The Optical Society
Journal:
Optics Express
KAUST Grant Number:
BAS/1/1614-01-01; BAS/1/1664-01-01
Issue Date:
18-Jan-2017
DOI:
10.1364/OE.25.001381
Type:
Article
ISSN:
1094-4087
Sponsors:
King Abdulaziz City for Science and Technology (KACST), Grant (No. KACST TIC R2-FP-008); King Abdullah University of Science and Technology (KAUST) baseline funding, (BAS/1/1614-01-01, BAS/1/1664-01-01.
Additional Links:
https://www.osapublishing.org/oe/abstract.cfm?uri=oe-25-2-1381
Appears in Collections:
Articles; Advanced Nanofabrication, Imaging and Characterization Core Lab; Photonics Laboratory

Full metadata record

DC FieldValue Language
dc.contributor.authorJanjua, Bilalen
dc.contributor.authorSun, Haidingen
dc.contributor.authorZhao, Chaoen
dc.contributor.authorAnjum, Dalaver H.en
dc.contributor.authorPriante, Davideen
dc.contributor.authorAlhamoud, Abdullah A.en
dc.contributor.authorWu, Feng-Yuen
dc.contributor.authorLi, Xiaohangen
dc.contributor.authorAlbadri, Abdulrahman M.en
dc.contributor.authorAlyamani, Ahmed Y.en
dc.contributor.authorEl-Desouki, Munir M.en
dc.contributor.authorNg, Tien Kheeen
dc.contributor.authorOoi, Boon S.en
dc.date.accessioned2017-02-12T12:50:28Z-
dc.date.available2017-02-12T12:50:28Z-
dc.date.issued2017-01-18en
dc.identifier.citationJanjua B, Sun H, Zhao C, Anjum DH, Priante D, et al. (2017) Droop-free Al_xGa_1-xN/Al_yGa_1-yN quantum-disks-in-nanowires ultraviolet LED emitting at 337 nm on metal/silicon substrates. Optics Express 25: 1381. Available: http://dx.doi.org/10.1364/OE.25.001381.en
dc.identifier.issn1094-4087en
dc.identifier.doi10.1364/OE.25.001381en
dc.identifier.urihttp://hdl.handle.net/10754/622866-
dc.description.abstractCurrently the AlGaN-based ultraviolet (UV) solid-state lighting research suffers from numerous challenges. In particular, low internal quantum efficiency, low extraction efficiency, inefficient doping, large polarization fields, and high dislocation density epitaxy constitute bottlenecks in realizing high power devices. Despite the clear advantage of quantum-confinement nanostructure, it has not been widely utilized in AlGaN-based nanowires. Here we utilize the self-assembled nanowires (NWs) with embedding quantum-disks (Qdisks) to mitigate these issues, and achieve UV emission of 337 nm at 32 A/cm (80 mA in 0.5 × 0.5 mm device), a turn-on voltage of ∼5.5 V and droop-free behavior up to 120 A/cm of injection current. The device was grown on a titanium-coated n-type silicon substrate, to improve current injection and heat dissipation. A narrow linewidth of 11.7 nm in the electroluminescence spectrum and a strong wavefunctions overlap factor of 42% confirm strong quantum confinement within uniformly formed AlGaN/AlGaN Qdisks, verified using transmission electron microscopy (TEM). The nitride-based UV nanowires light-emitting diodes (NWs-LEDs) grown on low cost and scalable metal/silicon template substrate, offers a scalable, environment friendly and low cost solution for numerous applications, such as solid-state lighting, spectroscopy, medical science and security.en
dc.description.sponsorshipKing Abdulaziz City for Science and Technology (KACST), Grant (No. KACST TIC R2-FP-008); King Abdullah University of Science and Technology (KAUST) baseline funding, (BAS/1/1614-01-01, BAS/1/1664-01-01.en
dc.publisherThe Optical Societyen
dc.relation.urlhttps://www.osapublishing.org/oe/abstract.cfm?uri=oe-25-2-1381en
dc.rightsThis paper was published in Optics Express and is made available as an electronic reprint with the permission of OSA. The paper can be found at the following URL on the OSA website: https://www.osapublishing.org/oe/abstract.cfm?uri=oe-25-2-1381. Systematic or multiple reproduction or distribution to multiple locations via electronic or other means is prohibited and is subject to penalties under law.en
dc.titleDroop-free AlxGa1-xN/AlyGa1-yN quantum-disks-in-nanowires ultraviolet LED emitting at 337 nm on metal/silicon substratesen
dc.typeArticleen
dc.contributor.departmentPhotonics Laboratoryen
dc.contributor.departmentKing Abdullah University of Science and Technology (KAUST), Advanced Semiconductor Laboratory, Thuwal, 23955-6900, Saudi Arabiaen
dc.contributor.departmentImaging and Characterization Core Laben
dc.identifier.journalOptics Expressen
dc.eprint.versionPost-printen
dc.contributor.institutionNational Center for Nanotechnology, King Abdulaziz City for Science and Technology (KACST), Riyadh, 11442-6086, Saudi Arabiaen
kaust.authorJanjua, Bilalen
kaust.authorSun, Haidingen
kaust.authorZhao, Chaoen
kaust.authorAnjum, Dalaver H.en
kaust.authorPriante, Davideen
kaust.authorAlhamoud, Abdullah A.en
kaust.authorWu, Feng-Yuen
kaust.authorLi, Xiaohangen
kaust.authorNg, Tien Kheeen
kaust.authorOoi, Boon S.en
kaust.grant.numberBAS/1/1614-01-01en
kaust.grant.numberBAS/1/1664-01-01en
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