Highly Manufacturable Deep (Sub-Millimeter) Etching Enabled High Aspect Ratio Complex Geometry Lego-Like Silicon Electronics

Handle URI:
http://hdl.handle.net/10754/622865
Title:
Highly Manufacturable Deep (Sub-Millimeter) Etching Enabled High Aspect Ratio Complex Geometry Lego-Like Silicon Electronics
Authors:
Ghoneim, Mohamed T. ( 0000-0002-5568-5284 ) ; Hussain, Muhammad Mustafa ( 0000-0003-3279-0441 )
Abstract:
A highly manufacturable deep reactive ion etching based process involving a hybrid soft/hard mask process technology shows high aspect ratio complex geometry Lego-like silicon electronics formation enabling free-form (physically flexible, stretchable, and reconfigurable) electronic systems.
KAUST Department:
Integrated Disruptive Electronic Applications (IDEA) Lab; Integrated Nanotechnology Lab
Citation:
Ghoneim MT, Hussain MM (2017) Highly Manufacturable Deep (Sub-Millimeter) Etching Enabled High Aspect Ratio Complex Geometry Lego-Like Silicon Electronics. Small: 1601801. Available: http://dx.doi.org/10.1002/smll.201601801.
Publisher:
Wiley-Blackwell
Journal:
Small
Issue Date:
1-Feb-2017
DOI:
10.1002/smll.201601801
Type:
Article
ISSN:
1613-6810
Sponsors:
This publication is based upon work supported by the King Abdullah University of Science and Technology (KAUST).
Additional Links:
http://onlinelibrary.wiley.com/doi/10.1002/smll.201601801/abstract
Appears in Collections:
Articles; Integrated Nanotechnology Lab

Full metadata record

DC FieldValue Language
dc.contributor.authorGhoneim, Mohamed T.en
dc.contributor.authorHussain, Muhammad Mustafaen
dc.date.accessioned2017-02-12T12:38:16Z-
dc.date.available2017-02-12T12:38:16Z-
dc.date.issued2017-02-01en
dc.identifier.citationGhoneim MT, Hussain MM (2017) Highly Manufacturable Deep (Sub-Millimeter) Etching Enabled High Aspect Ratio Complex Geometry Lego-Like Silicon Electronics. Small: 1601801. Available: http://dx.doi.org/10.1002/smll.201601801.en
dc.identifier.issn1613-6810en
dc.identifier.doi10.1002/smll.201601801en
dc.identifier.urihttp://hdl.handle.net/10754/622865-
dc.description.abstractA highly manufacturable deep reactive ion etching based process involving a hybrid soft/hard mask process technology shows high aspect ratio complex geometry Lego-like silicon electronics formation enabling free-form (physically flexible, stretchable, and reconfigurable) electronic systems.en
dc.description.sponsorshipThis publication is based upon work supported by the King Abdullah University of Science and Technology (KAUST).en
dc.publisherWiley-Blackwellen
dc.relation.urlhttp://onlinelibrary.wiley.com/doi/10.1002/smll.201601801/abstracten
dc.rightsThis is the peer reviewed version of the following article: Highly Manufacturable Deep (Sub-Millimeter) Etching Enabled High Aspect Ratio Complex Geometry Lego-Like Silicon Electronics, which has been published in final form at http://doi.org/10.1002/smll.201601801. This article may be used for non-commercial purposes in accordance With Wiley Terms and Conditions for self-archiving.en
dc.subjectMicrofabricationen
dc.subjectFlexible Electronicsen
dc.subjectDeep Reactive Ion Etchingen
dc.subjectSilicon Electronicsen
dc.subjectSoft/hard Masken
dc.titleHighly Manufacturable Deep (Sub-Millimeter) Etching Enabled High Aspect Ratio Complex Geometry Lego-Like Silicon Electronicsen
dc.typeArticleen
dc.contributor.departmentIntegrated Disruptive Electronic Applications (IDEA) Laben
dc.contributor.departmentIntegrated Nanotechnology Laben
dc.identifier.journalSmallen
dc.eprint.versionPost-printen
kaust.authorGhoneim, Mohamed T.en
kaust.authorHussain, Muhammad Mustafaen
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