Lattice-Symmetry-Driven Epitaxy of Hierarchical GaN Nanotripods

Handle URI:
http://hdl.handle.net/10754/622807
Title:
Lattice-Symmetry-Driven Epitaxy of Hierarchical GaN Nanotripods
Authors:
Wang, Ping; Wang, Xinqiang; Wang, Tao; Tan, Chih Shan; Sheng, Bowen; Sun, Xiaoxiao; Li, Mo; Rong, Xin; Zheng, Xiantong; Chen, Zhaoying; Yang, Xuelin; Xu, Fujun; Qin, Zhixin; Zhang, Jian; Zhang, Xixiang ( 0000-0002-3478-6414 ) ; Shen, Bo
Abstract:
Lattice-symmetry-driven epitaxy of hierarchical GaN nanotripods is demonstrated. The nanotripods emerge on the top of hexagonal GaN nanowires, which are selectively grown on pillar-patterned GaN templates using molecular beam epitaxy. High-resolution transmission electron microscopy confirms that two kinds of lattice-symmetry, wurtzite (wz) and zinc-blende (zb), coexist in the GaN nanotripods. Periodical transformation between wz and zb drives the epitaxy of the hierarchical nanotripods with N-polarity. The zb-GaN is formed by the poor diffusion of adatoms, and it can be suppressed by improving the ability of the Ga adatoms to migrate as the growth temperature increased. This controllable epitaxy of hierarchical GaN nanotripods allows quantum dots to be located at the phase junctions of the nanotripods and nanowires, suggesting a new recipe for multichannel quantum devices.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Wang P, Wang X, Wang T, Tan C-S, Sheng B, et al. (2017) Lattice-Symmetry-Driven Epitaxy of Hierarchical GaN Nanotripods. Advanced Functional Materials: 1604854. Available: http://dx.doi.org/10.1002/adfm.201604854.
Publisher:
Wiley-Blackwell
Journal:
Advanced Functional Materials
Issue Date:
18-Jan-2017
DOI:
10.1002/adfm.201604854
Type:
Article
ISSN:
1616-301X
Sponsors:
This work was partly supported by the National Key Research and Development Program (Grant No. 2016YFB0400100), the National Basic Research Program of China (Grant No. 2013CB632800), the National Natural Science Foundation of China (Grant Nos. 61225019, 61376060, 61428401, and 61521004), the Science Challenge Project (Grant No. JCKY2016212A503), NSAF (Grant No. U1630109), the CAEP Microsystem and THz Science and Technology Foundation (Grant No. CAEPMT201507), and the Open Fund of the State Key Laboratory on Integrated Optoelectronics and King Abdullah University of Science and Technology. The authors are grateful to Prof. Weikun Ge and Dr. Jun Li for their critical reading and polishing of the manuscript.
Additional Links:
http://onlinelibrary.wiley.com/doi/10.1002/adfm.201604854/full
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorWang, Pingen
dc.contributor.authorWang, Xinqiangen
dc.contributor.authorWang, Taoen
dc.contributor.authorTan, Chih Shanen
dc.contributor.authorSheng, Bowenen
dc.contributor.authorSun, Xiaoxiaoen
dc.contributor.authorLi, Moen
dc.contributor.authorRong, Xinen
dc.contributor.authorZheng, Xiantongen
dc.contributor.authorChen, Zhaoyingen
dc.contributor.authorYang, Xuelinen
dc.contributor.authorXu, Fujunen
dc.contributor.authorQin, Zhixinen
dc.contributor.authorZhang, Jianen
dc.contributor.authorZhang, Xixiangen
dc.contributor.authorShen, Boen
dc.date.accessioned2017-01-29T13:51:40Z-
dc.date.available2017-01-29T13:51:40Z-
dc.date.issued2017-01-18en
dc.identifier.citationWang P, Wang X, Wang T, Tan C-S, Sheng B, et al. (2017) Lattice-Symmetry-Driven Epitaxy of Hierarchical GaN Nanotripods. Advanced Functional Materials: 1604854. Available: http://dx.doi.org/10.1002/adfm.201604854.en
dc.identifier.issn1616-301Xen
dc.identifier.doi10.1002/adfm.201604854en
dc.identifier.urihttp://hdl.handle.net/10754/622807-
dc.description.abstractLattice-symmetry-driven epitaxy of hierarchical GaN nanotripods is demonstrated. The nanotripods emerge on the top of hexagonal GaN nanowires, which are selectively grown on pillar-patterned GaN templates using molecular beam epitaxy. High-resolution transmission electron microscopy confirms that two kinds of lattice-symmetry, wurtzite (wz) and zinc-blende (zb), coexist in the GaN nanotripods. Periodical transformation between wz and zb drives the epitaxy of the hierarchical nanotripods with N-polarity. The zb-GaN is formed by the poor diffusion of adatoms, and it can be suppressed by improving the ability of the Ga adatoms to migrate as the growth temperature increased. This controllable epitaxy of hierarchical GaN nanotripods allows quantum dots to be located at the phase junctions of the nanotripods and nanowires, suggesting a new recipe for multichannel quantum devices.en
dc.description.sponsorshipThis work was partly supported by the National Key Research and Development Program (Grant No. 2016YFB0400100), the National Basic Research Program of China (Grant No. 2013CB632800), the National Natural Science Foundation of China (Grant Nos. 61225019, 61376060, 61428401, and 61521004), the Science Challenge Project (Grant No. JCKY2016212A503), NSAF (Grant No. U1630109), the CAEP Microsystem and THz Science and Technology Foundation (Grant No. CAEPMT201507), and the Open Fund of the State Key Laboratory on Integrated Optoelectronics and King Abdullah University of Science and Technology. The authors are grateful to Prof. Weikun Ge and Dr. Jun Li for their critical reading and polishing of the manuscript.en
dc.publisherWiley-Blackwellen
dc.relation.urlhttp://onlinelibrary.wiley.com/doi/10.1002/adfm.201604854/fullen
dc.subjectGallium nitrideen
dc.subjectHierarchical nanotripodsen
dc.subjectLattice symmetryen
dc.subjectMicrostructuresen
dc.subjectMolecular beam epitaxyen
dc.subjectNanowiresen
dc.titleLattice-Symmetry-Driven Epitaxy of Hierarchical GaN Nanotripodsen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalAdvanced Functional Materialsen
dc.contributor.institutionState Key Laboratory of Artificial Microstructure and Mesoscopic Physics; School of Physics; Peking University; Beijing 100871 P. R. Chinaen
dc.contributor.institutionCollaborative Innovation Center of Quantum Matter; Beijing 100871 P. R. Chinaen
dc.contributor.institutionDepartment of Chemistry; National Tsing Hua University; Hsinchu 30013 Taiwanen
dc.contributor.institutionMicrosystem and Terahertz Research Center; China Academy of Engineering Physics (CAEP); Chengdu 610200 P. R. Chinaen
kaust.authorWang, Taoen
kaust.authorZhang, Xixiangen
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