Facile Doping and Work-Function Modification of Few-Layer Graphene Using Molecular Oxidants and Reductants

Handle URI:
http://hdl.handle.net/10754/622789
Title:
Facile Doping and Work-Function Modification of Few-Layer Graphene Using Molecular Oxidants and Reductants
Authors:
Mansour, Ahmed ( 0000-0002-3411-6808 ) ; Said, Marcel M.; Dey, Sukumar; Hu, Hanlin ( 0000-0001-5617-0998 ) ; Zhang, Siyuan; Munir, Rahim ( 0000-0002-6029-3760 ) ; Zhang, Yadong; Moudgil, Karttikay; Barlow, Stephen; Marder, Seth R.; Amassian, Aram ( 0000-0002-5734-1194 )
Abstract:
Doping of graphene is a viable route toward enhancing its electrical conductivity and modulating its work function for a wide range of technological applications. In this work, the authors demonstrate facile, solution-based, noncovalent surface doping of few-layer graphene (FLG) using a series of molecular metal-organic and organic species of varying n- and p-type doping strengths. In doing so, the authors tune the electronic, optical, and transport properties of FLG. The authors modulate the work function of graphene over a range of 2.4 eV (from 2.9 to 5.3 eV)-unprecedented for solution-based doping-via surface electron transfer. A substantial improvement of the conductivity of FLG is attributed to increasing carrier density, slightly offset by a minor reduction of mobility via Coulomb scattering. The mobility of single layer graphene has been reported to decrease significantly more via similar surface doping than FLG, which has the ability to screen buried layers. The dopant dosage influences the properties of FLG and reveals an optimal window of dopant coverage for the best transport properties, wherein dopant molecules aggregate into small and isolated clusters on the surface of FLG. This study shows how soluble molecular dopants can easily and effectively tune the work function and improve the optoelectronic properties of graphene.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Mansour AE, Said MM, Dey S, Hu H, Zhang S, et al. (2017) Facile Doping and Work-Function Modification of Few-Layer Graphene Using Molecular Oxidants and Reductants. Advanced Functional Materials: 1602004. Available: http://dx.doi.org/10.1002/adfm.201602004.
Publisher:
Wiley-Blackwell
Journal:
Advanced Functional Materials
Issue Date:
3-Jan-2017
DOI:
10.1002/adfm.201602004
Type:
Article
ISSN:
1616-301X
Sponsors:
The authors thank Mr. A. R. Kirmani and Dr. G. O. Ngongang Ndjawa from KAUST for valuable discussions pertaining to photoelectron spectroscopy experiments, and Mrs. L. Jamshaid for her logistical support. This work was supported by the King Abdullah University of Science and Technology, by the National Science Foundation (through the MRSEC program, DMR-0820382, and through DMR-1305247), by the Department of the Navy, Office of Naval Research Award No. N00014-14-1-0126, and by Boeing. A.A. is grateful to SABIC for the Career Development SABIC Chair.
Additional Links:
http://onlinelibrary.wiley.com/doi/10.1002/adfm.201602004/full
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorMansour, Ahmeden
dc.contributor.authorSaid, Marcel M.en
dc.contributor.authorDey, Sukumaren
dc.contributor.authorHu, Hanlinen
dc.contributor.authorZhang, Siyuanen
dc.contributor.authorMunir, Rahimen
dc.contributor.authorZhang, Yadongen
dc.contributor.authorMoudgil, Karttikayen
dc.contributor.authorBarlow, Stephenen
dc.contributor.authorMarder, Seth R.en
dc.contributor.authorAmassian, Aramen
dc.date.accessioned2017-01-29T13:51:39Z-
dc.date.available2017-01-29T13:51:39Z-
dc.date.issued2017-01-03en
dc.identifier.citationMansour AE, Said MM, Dey S, Hu H, Zhang S, et al. (2017) Facile Doping and Work-Function Modification of Few-Layer Graphene Using Molecular Oxidants and Reductants. Advanced Functional Materials: 1602004. Available: http://dx.doi.org/10.1002/adfm.201602004.en
dc.identifier.issn1616-301Xen
dc.identifier.doi10.1002/adfm.201602004en
dc.identifier.urihttp://hdl.handle.net/10754/622789-
dc.description.abstractDoping of graphene is a viable route toward enhancing its electrical conductivity and modulating its work function for a wide range of technological applications. In this work, the authors demonstrate facile, solution-based, noncovalent surface doping of few-layer graphene (FLG) using a series of molecular metal-organic and organic species of varying n- and p-type doping strengths. In doing so, the authors tune the electronic, optical, and transport properties of FLG. The authors modulate the work function of graphene over a range of 2.4 eV (from 2.9 to 5.3 eV)-unprecedented for solution-based doping-via surface electron transfer. A substantial improvement of the conductivity of FLG is attributed to increasing carrier density, slightly offset by a minor reduction of mobility via Coulomb scattering. The mobility of single layer graphene has been reported to decrease significantly more via similar surface doping than FLG, which has the ability to screen buried layers. The dopant dosage influences the properties of FLG and reveals an optimal window of dopant coverage for the best transport properties, wherein dopant molecules aggregate into small and isolated clusters on the surface of FLG. This study shows how soluble molecular dopants can easily and effectively tune the work function and improve the optoelectronic properties of graphene.en
dc.description.sponsorshipThe authors thank Mr. A. R. Kirmani and Dr. G. O. Ngongang Ndjawa from KAUST for valuable discussions pertaining to photoelectron spectroscopy experiments, and Mrs. L. Jamshaid for her logistical support. This work was supported by the King Abdullah University of Science and Technology, by the National Science Foundation (through the MRSEC program, DMR-0820382, and through DMR-1305247), by the Department of the Navy, Office of Naval Research Award No. N00014-14-1-0126, and by Boeing. A.A. is grateful to SABIC for the Career Development SABIC Chair.en
dc.publisherWiley-Blackwellen
dc.relation.urlhttp://onlinelibrary.wiley.com/doi/10.1002/adfm.201602004/fullen
dc.rightsThis is the peer reviewed version of the following article: A. E. Mansour, M. M. Said, S. Dey, H. Hu, S. Zhang, R. Munir, Y. Zhang, K. Moudgil, S. Barlow, S. R. Marder, A. Amassian, Adv. Funct. Mater. 2017, 1602004., which has been published in final form at http://onlinelibrary.wiley.com/doi/10.1002/adfm.201602004/full. This article may be used for non-commercial purposes in accordance With Wiley Terms and Conditions for self-archiving.en
dc.subjectDopingen
dc.subjectFew-layer grapheneen
dc.subjectMetal-organic molecular dopantsen
dc.subjectSolution-processeden
dc.subjectTransparent conducting electrodesen
dc.titleFacile Doping and Work-Function Modification of Few-Layer Graphene Using Molecular Oxidants and Reductantsen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalAdvanced Functional Materialsen
dc.eprint.versionPost-printen
dc.contributor.institutionCenter for Organic Photonics and Electronics and School of Chemistry and Biochemistry Georgia Institute of Technology Atlanta 30332-0400GA USAen
kaust.authorMansour, Ahmeden
kaust.authorDey, Sukumaren
kaust.authorHu, Hanlinen
kaust.authorMunir, Rahimen
kaust.authorAmassian, Aramen
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