Luminescence dynamics in AlGaN with AlN content of 20%

Handle URI:
http://hdl.handle.net/10754/622780
Title:
Luminescence dynamics in AlGaN with AlN content of 20%
Authors:
Soltani, Sonia; Bouzidi, Mouhamed; Touré, Alhousseynou; Gerhard, Marina; Halidou, Ibrahim; Chine, Zied; El Jani, Belgacem; Shakfa, Mohammad Khaled
Abstract:
Optical properties and carrier dynamics of an AlGaN layer with an AlN content of 20% have been studied using time-resolved photoluminescence (TR-PL). Despite the high density of defects due to the relatively high AlN content, an intense PL emission from the sample has been detected. Low-temperature PL spectra exhibit several features, accompanied by a strong emission-wavelength dependence of the PL decay time. A significant red-shift of more than 200 meV from the band edge is recorded for the PL emission from localized states. Temperature-dependent PL spectra of the sample are dominated by the emission from localized states and, furthermore, show a relatively slight decrease by almost an order of magnitude with increasing temperature from 45 to 300 K. Our observations indicate strong, spatial localization effects of carriers, resulting in an increase in the radiative recombination rate.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Photonics Laboratory
Citation:
Soltani S, Bouzidi M, Touré A, Gerhard M, Halidou I, et al. (2016) Luminescence dynamics in AlGaN with AlN content of 20%. physica status solidi (a): e201600481. Available: http://dx.doi.org/10.1002/pssa.201600481.
Publisher:
Wiley-Blackwell
Journal:
physica status solidi (a)
Issue Date:
15-Dec-2016
DOI:
10.1002/pssa.201600481
Type:
Article
ISSN:
1862-6300
Sponsors:
Financial support from the Tunisian General Directorate of Scientific and Technical Research (DGRST) is gratefully acknowledged. The authors are very grateful to Prof. Dr. Martin Koch of the Physics department of the Philipp University of Marburg for giving the opportunity to perform time-resolved photoluminescence measurements in his laboratories. The authors would like to thank the CRHEA CNRS Sophia-Antipolis for SEM analysis.
Additional Links:
http://onlinelibrary.wiley.com/doi/10.1002/pssa.201600481/full
Appears in Collections:
Articles; Photonics Laboratory; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorSoltani, Soniaen
dc.contributor.authorBouzidi, Mouhameden
dc.contributor.authorTouré, Alhousseynouen
dc.contributor.authorGerhard, Marinaen
dc.contributor.authorHalidou, Ibrahimen
dc.contributor.authorChine, Zieden
dc.contributor.authorEl Jani, Belgacemen
dc.contributor.authorShakfa, Mohammad Khaleden
dc.date.accessioned2017-01-29T13:51:38Z-
dc.date.available2017-01-29T13:51:38Z-
dc.date.issued2016-12-15en
dc.identifier.citationSoltani S, Bouzidi M, Touré A, Gerhard M, Halidou I, et al. (2016) Luminescence dynamics in AlGaN with AlN content of 20%. physica status solidi (a): e201600481. Available: http://dx.doi.org/10.1002/pssa.201600481.en
dc.identifier.issn1862-6300en
dc.identifier.doi10.1002/pssa.201600481en
dc.identifier.urihttp://hdl.handle.net/10754/622780-
dc.description.abstractOptical properties and carrier dynamics of an AlGaN layer with an AlN content of 20% have been studied using time-resolved photoluminescence (TR-PL). Despite the high density of defects due to the relatively high AlN content, an intense PL emission from the sample has been detected. Low-temperature PL spectra exhibit several features, accompanied by a strong emission-wavelength dependence of the PL decay time. A significant red-shift of more than 200 meV from the band edge is recorded for the PL emission from localized states. Temperature-dependent PL spectra of the sample are dominated by the emission from localized states and, furthermore, show a relatively slight decrease by almost an order of magnitude with increasing temperature from 45 to 300 K. Our observations indicate strong, spatial localization effects of carriers, resulting in an increase in the radiative recombination rate.en
dc.description.sponsorshipFinancial support from the Tunisian General Directorate of Scientific and Technical Research (DGRST) is gratefully acknowledged. The authors are very grateful to Prof. Dr. Martin Koch of the Physics department of the Philipp University of Marburg for giving the opportunity to perform time-resolved photoluminescence measurements in his laboratories. The authors would like to thank the CRHEA CNRS Sophia-Antipolis for SEM analysis.en
dc.publisherWiley-Blackwellen
dc.relation.urlhttp://onlinelibrary.wiley.com/doi/10.1002/pssa.201600481/fullen
dc.subjectAlGaNen
dc.subjectCarrier localizationen
dc.subjectDisorderen
dc.subjectTime-resolved photoluminescenceen
dc.titleLuminescence dynamics in AlGaN with AlN content of 20%en
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentPhotonics Laboratoryen
dc.identifier.journalphysica status solidi (a)en
dc.contributor.institutionUnité de Recherche sur les Hétéro-Epitaxies et Applications (URHEA), Faculté des Sciences, Université de Monastir; 5000 Monastir Tunisiaen
dc.contributor.institutionDepartment of Physics and Material Sciences Center, Philipps-University of Marburg, Renthof 5; 35032 Marburg Germanyen
kaust.authorShakfa, Mohammad Khaleden
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