High-Performance Near-Infrared Phototransistor Based on n-Type Small-Molecular Organic Semiconductor

Handle URI:
http://hdl.handle.net/10754/622774
Title:
High-Performance Near-Infrared Phototransistor Based on n-Type Small-Molecular Organic Semiconductor
Authors:
Li, Feng; Chen, Yin; Ma, Chun; Buttner, Ulrich; Leo, Karl; Wu, Tao ( 0000-0003-0845-4827 )
Abstract:
A solution-processed near-infrared (NIR) organic phototransistor (OPT) based on n-type organic small molecular material BODIPY-BF2 has been successfully fabricated. Its unprecedented performance, as well as its easy fabrication and good stability, mark this BODIPY-BF2 based OPT device as a very promising candidate for optoelectronic applications in the NIR regime.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Li F, Chen Y, Ma C, Buttner U, Leo K, et al. (2016) High-Performance Near-Infrared Phototransistor Based on n-Type Small-Molecular Organic Semiconductor. Advanced Electronic Materials 3: 1600430. Available: http://dx.doi.org/10.1002/aelm.201600430.
Publisher:
Wiley-Blackwell
Journal:
Advanced Electronic Materials
Issue Date:
13-Dec-2016
DOI:
10.1002/aelm.201600430
Type:
Article
ISSN:
2199-160X
Sponsors:
This work was supported by King Abdullah University of Science and Technology (KAUST). YC thanks the support from CSU(502035002, 502044001), NSFC (21602258). The authors thank Roland Gresser and Olaf Zeika for support and discussions.
Additional Links:
http://onlinelibrary.wiley.com/doi/10.1002/aelm.201600430/full
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorLi, Fengen
dc.contributor.authorChen, Yinen
dc.contributor.authorMa, Chunen
dc.contributor.authorButtner, Ulrichen
dc.contributor.authorLeo, Karlen
dc.contributor.authorWu, Taoen
dc.date.accessioned2017-01-29T13:51:38Z-
dc.date.available2017-01-29T13:51:38Z-
dc.date.issued2016-12-13en
dc.identifier.citationLi F, Chen Y, Ma C, Buttner U, Leo K, et al. (2016) High-Performance Near-Infrared Phototransistor Based on n-Type Small-Molecular Organic Semiconductor. Advanced Electronic Materials 3: 1600430. Available: http://dx.doi.org/10.1002/aelm.201600430.en
dc.identifier.issn2199-160Xen
dc.identifier.doi10.1002/aelm.201600430en
dc.identifier.urihttp://hdl.handle.net/10754/622774-
dc.description.abstractA solution-processed near-infrared (NIR) organic phototransistor (OPT) based on n-type organic small molecular material BODIPY-BF2 has been successfully fabricated. Its unprecedented performance, as well as its easy fabrication and good stability, mark this BODIPY-BF2 based OPT device as a very promising candidate for optoelectronic applications in the NIR regime.en
dc.description.sponsorshipThis work was supported by King Abdullah University of Science and Technology (KAUST). YC thanks the support from CSU(502035002, 502044001), NSFC (21602258). The authors thank Roland Gresser and Olaf Zeika for support and discussions.en
dc.publisherWiley-Blackwellen
dc.relation.urlhttp://onlinelibrary.wiley.com/doi/10.1002/aelm.201600430/fullen
dc.subjectField-effect transistorsen
dc.subjectNIR absorptionen
dc.subjectOptoelectronicsen
dc.subjectOrganic phototransistorsen
dc.subjectOrganic semiconductorsen
dc.titleHigh-Performance Near-Infrared Phototransistor Based on n-Type Small-Molecular Organic Semiconductoren
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalAdvanced Electronic Materialsen
dc.contributor.institutionColl Chem & Chem Engn; Cent S Univ; Changsha 410083 Hunan Chinaen
dc.contributor.institutionInstitut für Angewandte Photophysik; Technische Universität Dresden; Dresden 01062 Germanyen
kaust.authorLi, Fengen
kaust.authorMa, Chunen
kaust.authorButtner, Ulrichen
kaust.authorWu, Taoen
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