Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS 2 /WSe 2 hetero-bilayers

Handle URI:
http://hdl.handle.net/10754/622728
Title:
Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS 2 /WSe 2 hetero-bilayers
Authors:
Zhang, Chendong; Chuu, Chih-Piao; Ren, Xibiao; Li, Ming-yang; Li, Lain-Jong ( 0000-0002-4059-7783 ) ; Jin, Chuanhong; Chou, Mei-Yin; Shih, Chih-Kang
Abstract:
By using direct growth, we create a rotationally aligned MoS2/WSe2 hetero-bilayer as a designer van der Waals heterostructure. With rotational alignment, the lattice mismatch leads to a periodic variation of atomic registry between individual van der Waals layers, exhibiting a Moiré pattern with a well-defined periodicity. By combining scanning tunneling microscopy/spectroscopy, transmission electron microscopy, and first-principles calculations, we investigate interlayer coupling as a function of atomic registry. We quantitatively determine the influence of interlayer coupling on the electronic structure of the hetero-bilayer at different critical points. We show that the direct gap semiconductor concept is retained in the bilayer although the valence and conduction band edges are located at different layers. We further show that the local bandgap is periodically modulated in the X-Y direction with an amplitude of ~0.15 eV, leading to the formation of a two-dimensional electronic superlattice.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Zhang C, Chuu C-P, Ren X, Li M-Y, Li L-J, et al. (2017) Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS 2 /WSe 2 hetero-bilayers . Science Advances 3: e1601459. Available: http://dx.doi.org/10.1126/sciadv.1601459.
Publisher:
American Association for the Advancement of Science (AAAS)
Journal:
Science Advances
Issue Date:
7-Jan-2017
DOI:
10.1126/sciadv.1601459
Type:
Article
ISSN:
2375-2548
Sponsors:
This research was supported by grants from the Welch Foundation (F-1672) and the U.S. NSF (DMR-1306878 and EFMA-1542747). L.-J.L. thanks the support from the King Abdullah University of Science and Technology (Saudi Arabia); the Ministry of Science and Technology and Taiwan Consortium of Emergent Crystalline Materials, Academia Sinica (Taiwan); and the Asian Office of Aerospace Research and Development (FA23861510001) (USA). The STEM work was financially supported by the National Basic Research Program of China (grant nos. 2015CB921004 and 2014CB932500) and the National Science Foundation of China (grant nos. 51472215 and 51222202). The STEM experiments used the resources in the Center of Electron Microscopy of Zhejiang University. C.-P.C. and M.-Y.C. acknowledge support from the Thematic Project at Academia Sinica and the U.S. NSF (EFMA-1542747).
Additional Links:
http://advances.sciencemag.org/content/3/1/e1601459.full
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorZhang, Chendongen
dc.contributor.authorChuu, Chih-Piaoen
dc.contributor.authorRen, Xibiaoen
dc.contributor.authorLi, Ming-yangen
dc.contributor.authorLi, Lain-Jongen
dc.contributor.authorJin, Chuanhongen
dc.contributor.authorChou, Mei-Yinen
dc.contributor.authorShih, Chih-Kangen
dc.date.accessioned2017-01-25T08:57:41Z-
dc.date.available2017-01-25T08:57:41Z-
dc.date.issued2017-01-07en
dc.identifier.citationZhang C, Chuu C-P, Ren X, Li M-Y, Li L-J, et al. (2017) Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS 2 /WSe 2 hetero-bilayers . Science Advances 3: e1601459. Available: http://dx.doi.org/10.1126/sciadv.1601459.en
dc.identifier.issn2375-2548en
dc.identifier.doi10.1126/sciadv.1601459en
dc.identifier.urihttp://hdl.handle.net/10754/622728-
dc.description.abstractBy using direct growth, we create a rotationally aligned MoS2/WSe2 hetero-bilayer as a designer van der Waals heterostructure. With rotational alignment, the lattice mismatch leads to a periodic variation of atomic registry between individual van der Waals layers, exhibiting a Moiré pattern with a well-defined periodicity. By combining scanning tunneling microscopy/spectroscopy, transmission electron microscopy, and first-principles calculations, we investigate interlayer coupling as a function of atomic registry. We quantitatively determine the influence of interlayer coupling on the electronic structure of the hetero-bilayer at different critical points. We show that the direct gap semiconductor concept is retained in the bilayer although the valence and conduction band edges are located at different layers. We further show that the local bandgap is periodically modulated in the X-Y direction with an amplitude of ~0.15 eV, leading to the formation of a two-dimensional electronic superlattice.en
dc.description.sponsorshipThis research was supported by grants from the Welch Foundation (F-1672) and the U.S. NSF (DMR-1306878 and EFMA-1542747). L.-J.L. thanks the support from the King Abdullah University of Science and Technology (Saudi Arabia); the Ministry of Science and Technology and Taiwan Consortium of Emergent Crystalline Materials, Academia Sinica (Taiwan); and the Asian Office of Aerospace Research and Development (FA23861510001) (USA). The STEM work was financially supported by the National Basic Research Program of China (grant nos. 2015CB921004 and 2014CB932500) and the National Science Foundation of China (grant nos. 51472215 and 51222202). The STEM experiments used the resources in the Center of Electron Microscopy of Zhejiang University. C.-P.C. and M.-Y.C. acknowledge support from the Thematic Project at Academia Sinica and the U.S. NSF (EFMA-1542747).en
dc.publisherAmerican Association for the Advancement of Science (AAAS)en
dc.relation.urlhttp://advances.sciencemag.org/content/3/1/e1601459.fullen
dc.rightsThis is an open-access article distributed under the terms of the Creative Commons Attribution-NonCommercial license, which permits use, distribution, and reproduction in any medium, so long as the resultant use is not for commercial advantage and provided the original work is properly cited.en
dc.rights.urihttp://creativecommons.org/licenses/by-nc/4.0/en
dc.subjectVan Der Waals Heterostructuresen
dc.subjectInterlayer Couplingen
dc.subjectMoire Patternen
dc.subject2D Electronic Super-latticesen
dc.subjectTransition Metal Dichacogenidesen
dc.titleInterlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS 2 /WSe 2 hetero-bilayersen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalScience Advancesen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionDepartment of Physics, University of Texas at Austin, Austin, TX 78712, USA.en
dc.contributor.institutionInstitute of Atomic and Molecular Sciences, Academia Sinica, P.O. Box 23-166, Taipei 10617, Taiwan.en
dc.contributor.institutionState Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, People's Republic of China.en
dc.contributor.institutionResearch Center for Applied Sciences, Academia Sinica, Taipei 10617, Taiwan.en
dc.contributor.institutionSchool of Physics, Georgia Institute of Technology, Atlanta, GA 30332, USA.en
dc.contributor.institutionDepartment of Physics, National Taiwan University, Taipei 10617, Taiwan.en
kaust.authorLi, Ming-yangen
kaust.authorLi, Lain-Jongen
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