Hybrid complementary circuits based on p-channel organic and n-channel metal oxide transistors with balanced carrier mobilities of up to 10 cm2/Vs

Handle URI:
http://hdl.handle.net/10754/622711
Title:
Hybrid complementary circuits based on p-channel organic and n-channel metal oxide transistors with balanced carrier mobilities of up to 10 cm2/Vs
Authors:
Isakov, Ivan; Paterson, Alexandra F.; Solomeshch, Olga; Tessler, Nir; Zhang, Qiang ( 0000-0001-8519-5158 ) ; Li, Jun; Zhang, Xixiang ( 0000-0002-3478-6414 ) ; Fei, Zhuping; Heeney, Martin; Anthopoulos, Thomas D.
Abstract:
We report the development of hybrid complementary inverters based on p-channel organic and n-channel metal oxide thin-film transistors (TFTs) both processed from solution at <200 °C. For the organic TFTs, a ternary blend consisting of the small-molecule 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene, the polymer indacenodithiophene-benzothiadiazole (CIDT-BT) and the p-type dopant CF was employed, whereas the isotype InO/ZnO heterojunction was used for the n-channel TFTs. When integrated on the same substrate, p- and n-channel devices exhibited balanced carrier mobilities up to 10 cm/Vs. Hybrid complementary inverters based on these devices show high signal gain (>30 V/V) and wide noise margins (70%). The moderate processing temperatures employed and the achieved level of device performance highlight the tremendous potential of the technology for application in the emerging sector of large-area microelectronics.
KAUST Department:
Materials Science and Engineering Program
Citation:
Isakov I, Paterson AF, Solomeshch O, Tessler N, Zhang Q, et al. (2016) Hybrid complementary circuits based on p-channel organic and n-channel metal oxide transistors with balanced carrier mobilities of up to 10 cm2/Vs. Applied Physics Letters 109: 263301. Available: http://dx.doi.org/10.1063/1.4972988.
Publisher:
AIP Publishing
Journal:
Applied Physics Letters
Issue Date:
29-Dec-2016
DOI:
10.1063/1.4972988
Type:
Article
ISSN:
0003-6951; 1077-3118
Sponsors:
T.D.A., I.I., and A.F.P acknowledge the financial support from Cambridge Display Technology Limited (Company No. 2672530). Q.Z., J.L., and X.X.Z. are supported financially by KAUST. O.S. acknowledges the support of the Center for Absorption in Science of the Ministry of Immigrant Absorption under the framework of the KAMEA Program.
Additional Links:
http://aip.scitation.org/doi/10.1063/1.4972988
Appears in Collections:
Articles; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorIsakov, Ivanen
dc.contributor.authorPaterson, Alexandra F.en
dc.contributor.authorSolomeshch, Olgaen
dc.contributor.authorTessler, Niren
dc.contributor.authorZhang, Qiangen
dc.contributor.authorLi, Junen
dc.contributor.authorZhang, Xixiangen
dc.contributor.authorFei, Zhupingen
dc.contributor.authorHeeney, Martinen
dc.contributor.authorAnthopoulos, Thomas D.en
dc.date.accessioned2017-01-22T10:45:41Z-
dc.date.available2017-01-22T10:45:41Z-
dc.date.issued2016-12-29en
dc.identifier.citationIsakov I, Paterson AF, Solomeshch O, Tessler N, Zhang Q, et al. (2016) Hybrid complementary circuits based on p-channel organic and n-channel metal oxide transistors with balanced carrier mobilities of up to 10 cm2/Vs. Applied Physics Letters 109: 263301. Available: http://dx.doi.org/10.1063/1.4972988.en
dc.identifier.issn0003-6951en
dc.identifier.issn1077-3118en
dc.identifier.doi10.1063/1.4972988en
dc.identifier.urihttp://hdl.handle.net/10754/622711-
dc.description.abstractWe report the development of hybrid complementary inverters based on p-channel organic and n-channel metal oxide thin-film transistors (TFTs) both processed from solution at <200 °C. For the organic TFTs, a ternary blend consisting of the small-molecule 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene, the polymer indacenodithiophene-benzothiadiazole (CIDT-BT) and the p-type dopant CF was employed, whereas the isotype InO/ZnO heterojunction was used for the n-channel TFTs. When integrated on the same substrate, p- and n-channel devices exhibited balanced carrier mobilities up to 10 cm/Vs. Hybrid complementary inverters based on these devices show high signal gain (>30 V/V) and wide noise margins (70%). The moderate processing temperatures employed and the achieved level of device performance highlight the tremendous potential of the technology for application in the emerging sector of large-area microelectronics.en
dc.description.sponsorshipT.D.A., I.I., and A.F.P acknowledge the financial support from Cambridge Display Technology Limited (Company No. 2672530). Q.Z., J.L., and X.X.Z. are supported financially by KAUST. O.S. acknowledges the support of the Center for Absorption in Science of the Ministry of Immigrant Absorption under the framework of the KAMEA Program.en
dc.publisherAIP Publishingen
dc.relation.urlhttp://aip.scitation.org/doi/10.1063/1.4972988en
dc.rightsThis article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Isakov, I., Paterson, A.F., Solomeshch, O., Tessler, N., Zhang, Q., Li, J., Zhang, X., Fei, Z., Heeney, M. and Anthopoulos, T.D., 2016. Hybrid complementary circuits based on p-channel organic and n-channel metal oxide transistors with balanced carrier mobilities of up to 10 cm2/Vs. Applied Physics Letters, 109(26), p.263301. and may be found at http://aip.scitation.org/doi/10.1063/1.4972988.en
dc.titleHybrid complementary circuits based on p-channel organic and n-channel metal oxide transistors with balanced carrier mobilities of up to 10 cm2/Vsen
dc.typeArticleen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.identifier.journalApplied Physics Lettersen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionDepartment of Physics and Centre for Plastic Electronics, Blackett Laboratory, Imperial College London, South Kensington, London, SW7 2AZ, United Kingdomen
dc.contributor.institutionSara and Moshe Zisapel Nano-Electronic Center, Department of Electrical Engineering, Technion - Israel Institute of Technology, Haifa, 3200, Israelen
dc.contributor.institutionDepartment of Chemistry, Centre for Plastic Electronics, Imperial College London, South Kensington, London, SW7 2AZ, United Kingdomen
kaust.authorZhang, Qiangen
kaust.authorLi, Junen
kaust.authorZhang, Xixiangen
All Items in KAUST are protected by copyright, with all rights reserved, unless otherwise indicated.