Method of fabricating patterned crystal structures

Handle URI:
http://hdl.handle.net/10754/622699
Title:
Method of fabricating patterned crystal structures
Authors:
Yu, Liyang; Amassian, Aram ( 0000-0002-5734-1194 )
Assignee:
King Abdullah University Of Science And Technology
Abstract:
A method of manufacturing a patterned crystal structure for includes depositing an amorphous material. The amorphous material is modified such that a first portion of the amorphous thin-film layer has a first height/volume and a second portion of the amorphous thin-film layer has a second height/volume greater than the first portion. The amorphous material is annealed to induce crystallization, wherein crystallization is induced in the second portion first due to the greater height/volume of the second portion relative to the first portion to form patterned crystal structures.
KAUST Department:
Physical Science and Engineering Division
Issue Date:
15-Dec-2016
Submitted date:
2015-06-15
Type:
Patent
Application Number:
WO 2016199093 A1
Patent Status:
Published Application
Additional Links:
http://www.google.com/patents/WO2016199093A1; http://worldwide.espacenet.com/publicationDetails/biblio?CC=WO&NR=2016199093A1&KC=A1&FT=D
Appears in Collections:
Patents

Full metadata record

DC FieldValue Language
dc.contributor.authorYu, Liyangen
dc.contributor.authorAmassian, Aramen
dc.date.accessioned2017-01-19T07:08:45Z-
dc.date.available2017-01-19T07:08:45Z-
dc.date.issued2016-12-15-
dc.date.submitted2015-06-15-
dc.identifier.urihttp://hdl.handle.net/10754/622699-
dc.description.abstractA method of manufacturing a patterned crystal structure for includes depositing an amorphous material. The amorphous material is modified such that a first portion of the amorphous thin-film layer has a first height/volume and a second portion of the amorphous thin-film layer has a second height/volume greater than the first portion. The amorphous material is annealed to induce crystallization, wherein crystallization is induced in the second portion first due to the greater height/volume of the second portion relative to the first portion to form patterned crystal structures.en
dc.relation.urlhttp://www.google.com/patents/WO2016199093A1en
dc.relation.urlhttp://worldwide.espacenet.com/publicationDetails/biblio?CC=WO&NR=2016199093A1&KC=A1&FT=Den
dc.titleMethod of fabricating patterned crystal structuresen
dc.typePatenten
dc.contributor.departmentPhysical Science and Engineering Divisionen
dc.description.statusPublished Applicationen
dc.contributor.assigneeKing Abdullah University Of Science And Technologyen
dc.description.countryWorld Intellectual Property Organization (WIPO)en
dc.identifier.applicationnumberWO 2016199093 A1en
All Items in KAUST are protected by copyright, with all rights reserved, unless otherwise indicated.