Strong Rashba-Edelstein Effect-Induced Spin–Orbit Torques in Monolayer Transition Metal Dichalcogenide/Ferromagnet Bilayers

Handle URI:
http://hdl.handle.net/10754/622663
Title:
Strong Rashba-Edelstein Effect-Induced Spin–Orbit Torques in Monolayer Transition Metal Dichalcogenide/Ferromagnet Bilayers
Authors:
Shao, Qiming; Yu, Guoqiang; Lan, Yann Wen; Shi, Yumeng; Li, Ming Yang; Zheng, Cheng; Zhu, Xiaodan; Li, Lain-Jong ( 0000-0002-4059-7783 ) ; Amiri, Pedram Khalili; Wang, Kang L.
Abstract:
The electronic and optoelectronic properties of two-dimensional materials have been extensively explored in graphene and layered transition metal dichalcogenides (TMDs). Spintronics in these two-dimensional materials could provide novel opportunities for future electronics, for example, efficient generation of spin current, which should enable the efficient manipulation of magnetic elements. So far, the quantitative determination of charge current-induced spin current and spin-orbit torques (SOTs) on the magnetic layer adjacent to two-dimensional materials is still lacking. Here, we report a large SOT generated by current-induced spin accumulation through the Rashba-Edelstein effect in the composites of monolayer TMD (MoS or WSe)/CoFeB bilayer. The effective spin conductivity corresponding to the SOT turns out to be almost temperature-independent. Our results suggest that the charge-spin conversion in the chemical vapor deposition-grown large-scale monolayer TMDs could potentially lead to high energy efficiency for magnetization reversal and convenient device integration for future spintronics based on two-dimensional materials.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Shao Q, Yu G, Lan Y-W, Shi Y, Li M-Y, et al. (2016) Strong Rashba-Edelstein Effect-Induced Spin–Orbit Torques in Monolayer Transition Metal Dichalcogenide/Ferromagnet Bilayers. Nano Letters 16: 7514–7520. Available: http://dx.doi.org/10.1021/acs.nanolett.6b03300.
Publisher:
American Chemical Society (ACS)
Journal:
Nano Letters
Issue Date:
18-Nov-2016
DOI:
10.1021/acs.nanolett.6b03300
Type:
Article
ISSN:
1530-6984; 1530-6992
Sponsors:
We thank Haojun Zhang, Dan Wilkinson, and Bruce Dunn for discussions and assistance with experiments. Also, we thank the four anonymous reviewers whose comments and suggestions helped improve and clarify this manuscript. This work is supported as part of the Spins and Heat in Nanoscale Electronic Systems (SHINES), an Energy Frontier Research Center funded by the US Department of Energy (DOE), Office of Science, Basic Energy Sciences (BES), under Award No. DE-SC0012670. We are also very grateful to the support from the Function Accelerated nanoMaterial Engineering (FAME) Center and Center for Spintronic Materials, Interfaces and Novel Architectures (C-SPIN), two of six centers of Semiconductor Technology Advanced Research network (STARnet), a Semiconductor Research Corporation (SRC) program sponsored by Microelectronics Advanced Research Corporation (MARCO) and Defense Advanced Research Projects Agency (DARPA). L.-J.L. acknowledges the support from King Abdullah University of Science and Technology (Saudi Arabia), Ministry of Science and Technology (MOST), and Taiwan Consortium of Emergent Crystalline Materials (TCECM).
Additional Links:
http://pubs.acs.org/doi/full/10.1021/acs.nanolett.6b03300
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorShao, Qimingen
dc.contributor.authorYu, Guoqiangen
dc.contributor.authorLan, Yann Wenen
dc.contributor.authorShi, Yumengen
dc.contributor.authorLi, Ming Yangen
dc.contributor.authorZheng, Chengen
dc.contributor.authorZhu, Xiaodanen
dc.contributor.authorLi, Lain-Jongen
dc.contributor.authorAmiri, Pedram Khalilien
dc.contributor.authorWang, Kang L.en
dc.date.accessioned2017-01-09T11:52:22Z-
dc.date.available2017-01-09T11:52:22Z-
dc.date.issued2016-11-18en
dc.identifier.citationShao Q, Yu G, Lan Y-W, Shi Y, Li M-Y, et al. (2016) Strong Rashba-Edelstein Effect-Induced Spin–Orbit Torques in Monolayer Transition Metal Dichalcogenide/Ferromagnet Bilayers. Nano Letters 16: 7514–7520. Available: http://dx.doi.org/10.1021/acs.nanolett.6b03300.en
dc.identifier.issn1530-6984en
dc.identifier.issn1530-6992en
dc.identifier.doi10.1021/acs.nanolett.6b03300en
dc.identifier.urihttp://hdl.handle.net/10754/622663-
dc.description.abstractThe electronic and optoelectronic properties of two-dimensional materials have been extensively explored in graphene and layered transition metal dichalcogenides (TMDs). Spintronics in these two-dimensional materials could provide novel opportunities for future electronics, for example, efficient generation of spin current, which should enable the efficient manipulation of magnetic elements. So far, the quantitative determination of charge current-induced spin current and spin-orbit torques (SOTs) on the magnetic layer adjacent to two-dimensional materials is still lacking. Here, we report a large SOT generated by current-induced spin accumulation through the Rashba-Edelstein effect in the composites of monolayer TMD (MoS or WSe)/CoFeB bilayer. The effective spin conductivity corresponding to the SOT turns out to be almost temperature-independent. Our results suggest that the charge-spin conversion in the chemical vapor deposition-grown large-scale monolayer TMDs could potentially lead to high energy efficiency for magnetization reversal and convenient device integration for future spintronics based on two-dimensional materials.en
dc.description.sponsorshipWe thank Haojun Zhang, Dan Wilkinson, and Bruce Dunn for discussions and assistance with experiments. Also, we thank the four anonymous reviewers whose comments and suggestions helped improve and clarify this manuscript. This work is supported as part of the Spins and Heat in Nanoscale Electronic Systems (SHINES), an Energy Frontier Research Center funded by the US Department of Energy (DOE), Office of Science, Basic Energy Sciences (BES), under Award No. DE-SC0012670. We are also very grateful to the support from the Function Accelerated nanoMaterial Engineering (FAME) Center and Center for Spintronic Materials, Interfaces and Novel Architectures (C-SPIN), two of six centers of Semiconductor Technology Advanced Research network (STARnet), a Semiconductor Research Corporation (SRC) program sponsored by Microelectronics Advanced Research Corporation (MARCO) and Defense Advanced Research Projects Agency (DARPA). L.-J.L. acknowledges the support from King Abdullah University of Science and Technology (Saudi Arabia), Ministry of Science and Technology (MOST), and Taiwan Consortium of Emergent Crystalline Materials (TCECM).en
dc.publisherAmerican Chemical Society (ACS)en
dc.relation.urlhttp://pubs.acs.org/doi/full/10.1021/acs.nanolett.6b03300en
dc.subjectcharge-spin conversionen
dc.subjectRashba-Edelstein effecten
dc.subjectSpin-orbit torqueen
dc.subjectspintronicsen
dc.subjecttransition metal dichalcogenidesen
dc.subjecttwo-dimensional materialsen
dc.titleStrong Rashba-Edelstein Effect-Induced Spin–Orbit Torques in Monolayer Transition Metal Dichalcogenide/Ferromagnet Bilayersen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalNano Lettersen
dc.contributor.institutionDevice Research Laboratory, Department of Electrical Engineering, University of California, Los Angeles, 90095, United Statesen
dc.contributor.institutionNational Nano Device Laboratories, Hsinchu, 30078, Taiwanen
dc.contributor.institutionSZU-NUS Collaborative Innovation Center for Optoelectronic Science and Technology, Key Laboratory of Optoelectronic Devices and Systems, Ministry of Education, College of Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, Chinaen
dc.contributor.institutionResearch Center for Applied Sciences, Academia Sinica, Taipei, 10617, Taiwanen
kaust.authorShi, Yumengen
kaust.authorLi, Ming Yangen
kaust.authorLi, Lain-Jongen
All Items in KAUST are protected by copyright, with all rights reserved, unless otherwise indicated.