Impact of N-plasma and Ga-irradiation on MoS2 layer in molecular beam epitaxy

Handle URI:
http://hdl.handle.net/10754/622634
Title:
Impact of N-plasma and Ga-irradiation on MoS2 layer in molecular beam epitaxy
Authors:
Mishra, Pawan ( 0000-0001-9764-6016 ) ; Tangi, Malleswararao ( 0000-0003-1141-4324 ) ; Ng, Tien Khee ( 0000-0002-1480-6975 ) ; Hedhili, Mohamed N. ( 0000-0002-3624-036X ) ; Anjum, Dalaver H.; Alias, Mohd Sharizal ( 0000-0003-1369-1421 ) ; Tseng, Chien-Chih ( 0000-0003-0676-5664 ) ; Li, Lain-Jong ( 0000-0002-4059-7783 ) ; Ooi, Boon S. ( 0000-0001-9606-5578 )
Abstract:
Recent interest in two-dimensional materials has resulted in ultra-thin devices based on the transfer of transition metal dichalcogenides (TMDs) onto other TMDs or III-nitride materials. In this investigation, we realized p-type monolayer (ML) MoS2, and intrinsic GaN/p-type MoS2 heterojunction by the GaN overgrowth on ML-MoS2/c-sapphire using the plasma-assisted molecular beam epitaxy. A systematic nitrogen plasma (N∗2N2*) and gallium (Ga) irradiation studies are employed to understand the individual effect on the doping levels of ML-MoS2, which is evaluated by micro-Raman and high-resolution X-Ray photoelectron spectroscopy (HRXPS) measurements. With both methods, p-type doping was attained and was verified by softening and strengthening of characteristics phonon modes E12gE2g1 and A1gA1g from Raman spectroscopy. With adequate N∗2N2*-irradiation (3 min), respective shift of 1.79 cm−1 for A1gA1g and 1.11 cm−1 for E12gE2g1 are obtained while short term Ga-irradiated (30 s) exhibits the shift of 1.51 cm−1 for A1gA1g and 0.93 cm−1 for E12gE2g1. Moreover, in HRXPS valence band spectra analysis, the position of valence band maximum measured with respect to the Fermi level is determined to evaluate the type of doping levels in ML-MoS2. The observed values of valance band maximum are reduced to 0.5, and 0.2 eV from the intrinsic value of ≈1.0 eV for N∗2N2*- and Ga-irradiated MoS2 layers, which confirms the p-type doping of ML-MoS2. Further p-type doping is verified by Hall effect measurements. Thus, by GaN overgrowth, we attained the building block of intrinsic GaN/p-type MoS2 heterojunction. Through this work, we have provided the platform for the realization of dissimilar heterostructure via monolithic approach.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Photonics Laboratory; Imaging and Characterization Core Lab; Physical Sciences and Engineering (PSE) Division
Citation:
Mishra P, Tangi M, Ng TK, Hedhili MN, Anjum DH, et al. (2017) Impact of N-plasma and Ga-irradiation on MoS2 layer in molecular beam epitaxy. Applied Physics Letters 110: 012101. Available: http://dx.doi.org/10.1063/1.4973371.
Publisher:
AIP Publishing
Journal:
Applied Physics Letters
KAUST Grant Number:
BAS/1/1614-01-01
Issue Date:
3-Jan-2017
DOI:
10.1063/1.4973371
Type:
Article
ISSN:
0003-6951; 1077-3118
Sponsors:
This publication is based upon the work supported by the King Abdulaziz City for Science and Technology (KACST), Grant No. KACST TIC R2-FP-008, and the King Abdullah University of Science and Technology (KAUST) baseline funding BAS/1/1614-01-01.
Additional Links:
http://aip.scitation.org/doi/10.1063/1.4973371
Appears in Collections:
Articles; Advanced Nanofabrication, Imaging and Characterization Core Lab; Physical Sciences and Engineering (PSE) Division; Photonics Laboratory; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorMishra, Pawanen
dc.contributor.authorTangi, Malleswararaoen
dc.contributor.authorNg, Tien Kheeen
dc.contributor.authorHedhili, Mohamed N.en
dc.contributor.authorAnjum, Dalaver H.en
dc.contributor.authorAlias, Mohd Sharizalen
dc.contributor.authorTseng, Chien-Chihen
dc.contributor.authorLi, Lain-Jongen
dc.contributor.authorOoi, Boon S.en
dc.date.accessioned2017-01-04T08:25:56Z-
dc.date.available2017-01-04T08:25:56Z-
dc.date.issued2017-01-03en
dc.identifier.citationMishra P, Tangi M, Ng TK, Hedhili MN, Anjum DH, et al. (2017) Impact of N-plasma and Ga-irradiation on MoS2 layer in molecular beam epitaxy. Applied Physics Letters 110: 012101. Available: http://dx.doi.org/10.1063/1.4973371.en
dc.identifier.issn0003-6951en
dc.identifier.issn1077-3118en
dc.identifier.doi10.1063/1.4973371en
dc.identifier.urihttp://hdl.handle.net/10754/622634-
dc.description.abstractRecent interest in two-dimensional materials has resulted in ultra-thin devices based on the transfer of transition metal dichalcogenides (TMDs) onto other TMDs or III-nitride materials. In this investigation, we realized p-type monolayer (ML) MoS2, and intrinsic GaN/p-type MoS2 heterojunction by the GaN overgrowth on ML-MoS2/c-sapphire using the plasma-assisted molecular beam epitaxy. A systematic nitrogen plasma (N∗2N2*) and gallium (Ga) irradiation studies are employed to understand the individual effect on the doping levels of ML-MoS2, which is evaluated by micro-Raman and high-resolution X-Ray photoelectron spectroscopy (HRXPS) measurements. With both methods, p-type doping was attained and was verified by softening and strengthening of characteristics phonon modes E12gE2g1 and A1gA1g from Raman spectroscopy. With adequate N∗2N2*-irradiation (3 min), respective shift of 1.79 cm−1 for A1gA1g and 1.11 cm−1 for E12gE2g1 are obtained while short term Ga-irradiated (30 s) exhibits the shift of 1.51 cm−1 for A1gA1g and 0.93 cm−1 for E12gE2g1. Moreover, in HRXPS valence band spectra analysis, the position of valence band maximum measured with respect to the Fermi level is determined to evaluate the type of doping levels in ML-MoS2. The observed values of valance band maximum are reduced to 0.5, and 0.2 eV from the intrinsic value of ≈1.0 eV for N∗2N2*- and Ga-irradiated MoS2 layers, which confirms the p-type doping of ML-MoS2. Further p-type doping is verified by Hall effect measurements. Thus, by GaN overgrowth, we attained the building block of intrinsic GaN/p-type MoS2 heterojunction. Through this work, we have provided the platform for the realization of dissimilar heterostructure via monolithic approach.en
dc.description.sponsorshipThis publication is based upon the work supported by the King Abdulaziz City for Science and Technology (KACST), Grant No. KACST TIC R2-FP-008, and the King Abdullah University of Science and Technology (KAUST) baseline funding BAS/1/1614-01-01.en
dc.publisherAIP Publishingen
dc.relation.urlhttp://aip.scitation.org/doi/10.1063/1.4973371en
dc.rightsAll article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).en
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.titleImpact of N-plasma and Ga-irradiation on MoS2 layer in molecular beam epitaxyen
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentPhotonics Laboratoryen
dc.contributor.departmentImaging and Characterization Core Laben
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalApplied Physics Lettersen
dc.eprint.versionPost-printen
kaust.authorMishra, Pawanen
kaust.authorTangi, Malleswararaoen
kaust.authorNg, Tien Kheeen
kaust.authorHedhili, Mohamed N.en
kaust.authorAnjum, Dalaver H.en
kaust.authorAlias, Mohd Sharizalen
kaust.authorTseng, Chien-Chihen
kaust.authorLi, Lain-Jongen
kaust.authorOoi, Boon S.en
kaust.grant.numberBAS/1/1614-01-01en
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