Optoelectronic devices, low temperature preparation methods, and improved electron transport layers

Handle URI:
http://hdl.handle.net/10754/622633
Title:
Optoelectronic devices, low temperature preparation methods, and improved electron transport layers
Authors:
Eita, Mohamed S.; El, Labban Abdulrahman; Usman, Anwar; Beaujuge, Pierre; Abdelsaboor, Omar F. M. ( 0000-0001-8500-1130 )
Assignee:
King Abdullah University Of Science And Technology
Abstract:
An optoelectronic device such as a photovoltaic device which has at least one layer, such as an electron transport layer, which comprises a plurality of alternating, oppositely charged layers including metal oxide layers. The metal oxide can be zinc oxide. The plurality of layers can be prepared by layer-by-layer processing in which alternating layers are built up step-by-step due to electrostatic attraction. The efficiency of the device can be increased by this processing method compared to a comparable method like sputtering. The number of layers can be controlled to improve device efficiency. Aqueous solutions can be used which is environmentally friendly. Annealing can be avoided. A quantum dot layer can be used next to the metal oxide layer to form a quantum dot heterojunction solar device.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Issue Date:
4-Aug-2016
Submitted date:
2015-01-27
Type:
Patent
Application Number:
WO 2016120721 A1
Patent Status:
Published Application
Additional Links:
http://www.google.com/patents/WO2016120721A1; http://worldwide.espacenet.com/publicationDetails/biblio?CC=WO&NR=2016120721A1&KC=A1&FT=D
Appears in Collections:
Patents

Full metadata record

DC FieldValue Language
dc.contributor.authorEita, Mohamed S.en
dc.contributor.authorEl, Labban Abdulrahmanen
dc.contributor.authorUsman, Anwaren
dc.contributor.authorBeaujuge, Pierreen
dc.contributor.authorAbdelsaboor, Omar F. M.en
dc.date.accessioned2017-01-03T07:16:29Z-
dc.date.available2017-01-03T07:16:29Z-
dc.date.issued2016-08-04-
dc.date.submitted2015-01-27-
dc.identifier.urihttp://hdl.handle.net/10754/622633-
dc.description.abstractAn optoelectronic device such as a photovoltaic device which has at least one layer, such as an electron transport layer, which comprises a plurality of alternating, oppositely charged layers including metal oxide layers. The metal oxide can be zinc oxide. The plurality of layers can be prepared by layer-by-layer processing in which alternating layers are built up step-by-step due to electrostatic attraction. The efficiency of the device can be increased by this processing method compared to a comparable method like sputtering. The number of layers can be controlled to improve device efficiency. Aqueous solutions can be used which is environmentally friendly. Annealing can be avoided. A quantum dot layer can be used next to the metal oxide layer to form a quantum dot heterojunction solar device.en
dc.relation.urlhttp://www.google.com/patents/WO2016120721A1en
dc.relation.urlhttp://worldwide.espacenet.com/publicationDetails/biblio?CC=WO&NR=2016120721A1&KC=A1&FT=Den
dc.titleOptoelectronic devices, low temperature preparation methods, and improved electron transport layersen
dc.typePatenten
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.description.statusPublished Applicationen
dc.contributor.assigneeKing Abdullah University Of Science And Technologyen
dc.description.countryWorld Intellectual Property Organization (WIPO)en
dc.identifier.applicationnumberWO 2016120721 A1en
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