Stable switching of resistive random access memory on the nanotip array electrodes

Handle URI:
http://hdl.handle.net/10754/622627
Title:
Stable switching of resistive random access memory on the nanotip array electrodes
Authors:
Tsai, Kun-Tong; Ho, Chih-Hsiang; Chang, Wen-Yuan; Ke, Jr-Jian; Mungan, Elif Selin; Wang, Yuh-Lin; He, Jr-Hau ( 0000-0003-1886-9241 )
Abstract:
The formation/rupture of conducting filaments (CFs) in resistive random access memory (ReRAM) materials tune the electrical conductivities non-volatilely and are largely affected by its material composition [1], internal configurations [2] and external environments [3,4]. Therefore, controlling repetitive formation/rupture of CF as well as the spatial uniformity of formed CF are fundamentally important for improving the resistive switching (RS) performance. In this context, we have shown that by adding a field initiator, typically a textured electrode, both performance and switching uniformity of ReRAMs can be improved dramatically [5]. In addition, despite its promising characteristics, the scalable fabrication and structural homogeneity of such nanostructured electrodes are still lacking or unattainable, making miniaturization of ReRAM devices an exceeding challenge. Here, we employ nanostructured electrode (nanotip arrays, extremely uniform) formed spontaneously via a self-organized process to improve the ZnO ReRAM switching characteristics.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Citation:
Tsai K-T, Ho C-H, Chang W-Y, Ke J-J, Mungan ES, et al. (2016) Stable switching of resistive random access memory on the nanotip array electrodes. 2016 74th Annual Device Research Conference (DRC). Available: http://dx.doi.org/10.1109/DRC.2016.7548428.
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Journal:
2016 74th Annual Device Research Conference (DRC)
Conference/Event name:
74th Annual Device Research Conference, DRC 2016
Issue Date:
13-Sep-2016
DOI:
10.1109/DRC.2016.7548428
Type:
Conference Paper
Additional Links:
http://ieeexplore.ieee.org/document/7548428/
Appears in Collections:
Conference Papers; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorTsai, Kun-Tongen
dc.contributor.authorHo, Chih-Hsiangen
dc.contributor.authorChang, Wen-Yuanen
dc.contributor.authorKe, Jr-Jianen
dc.contributor.authorMungan, Elif Selinen
dc.contributor.authorWang, Yuh-Linen
dc.contributor.authorHe, Jr-Hauen
dc.date.accessioned2017-01-02T13:45:00Z-
dc.date.available2017-01-02T13:45:00Z-
dc.date.issued2016-09-13en
dc.identifier.citationTsai K-T, Ho C-H, Chang W-Y, Ke J-J, Mungan ES, et al. (2016) Stable switching of resistive random access memory on the nanotip array electrodes. 2016 74th Annual Device Research Conference (DRC). Available: http://dx.doi.org/10.1109/DRC.2016.7548428.en
dc.identifier.doi10.1109/DRC.2016.7548428en
dc.identifier.urihttp://hdl.handle.net/10754/622627-
dc.description.abstractThe formation/rupture of conducting filaments (CFs) in resistive random access memory (ReRAM) materials tune the electrical conductivities non-volatilely and are largely affected by its material composition [1], internal configurations [2] and external environments [3,4]. Therefore, controlling repetitive formation/rupture of CF as well as the spatial uniformity of formed CF are fundamentally important for improving the resistive switching (RS) performance. In this context, we have shown that by adding a field initiator, typically a textured electrode, both performance and switching uniformity of ReRAMs can be improved dramatically [5]. In addition, despite its promising characteristics, the scalable fabrication and structural homogeneity of such nanostructured electrodes are still lacking or unattainable, making miniaturization of ReRAM devices an exceeding challenge. Here, we employ nanostructured electrode (nanotip arrays, extremely uniform) formed spontaneously via a self-organized process to improve the ZnO ReRAM switching characteristics.en
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.relation.urlhttp://ieeexplore.ieee.org/document/7548428/en
dc.rights(c) 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.en
dc.titleStable switching of resistive random access memory on the nanotip array electrodesen
dc.typeConference Paperen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.identifier.journal2016 74th Annual Device Research Conference (DRC)en
dc.conference.date2016-06-19 to 2016-06-22en
dc.conference.name74th Annual Device Research Conference, DRC 2016en
dc.conference.locationNewark, DE, USAen
dc.eprint.versionPost-printen
dc.contributor.institutionInstitute of Atomic and Molecular Sciences, Academia Sinica, P.O. Box 23-166, Taipei, 10617, Taiwanen
dc.contributor.institutionDepartment of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, 47907, United Statesen
kaust.authorTsai, Kun-Tongen
kaust.authorChang, Wen-Yuanen
kaust.authorKe, Jr-Jianen
kaust.authorHe, Jr-Hauen
All Items in KAUST are protected by copyright, with all rights reserved, unless otherwise indicated.