Wavy Channel TFT-Based Digital Circuits

Handle URI:
http://hdl.handle.net/10754/622615
Title:
Wavy Channel TFT-Based Digital Circuits
Authors:
Hanna, Amir ( 0000-0003-4679-366X ) ; Hussain, Aftab M. ( 0000-0002-9516-9428 ) ; Hussain, Aftab M. ( 0000-0002-9516-9428 ) ; Hussain, Aftab M. ( 0000-0002-9516-9428 ) ; Omran, Hesham ( 0000-0002-0117-7364 ) ; Alsharif, Sarah M.; Salama, Khaled N. ( 0000-0001-7742-1282 ) ; Hussain, Muhammad Mustafa ( 0000-0003-3279-0441 )
Abstract:
We report a wavy channel (WC) architecture thin-film transistor-based digital circuitry using ZnO as a channel material. The novel architecture allows for extending device width by integrating vertical finlike substrate corrugations giving rise to 50% larger device width, without occupying extra chip area. The enhancement in the output drive current is 100%, when compared with conventional planar architecture for devices occupying the same chip area. The current increase is attributed to both the extra device width and 50% enhancement in field-effect mobility due to electrostatic gating effects. Fabricated inverters show that WC inverters can achieve two times the peak-to-peak output voltage for the same input when compared with planar devices. In addition, WC inverters show 30% faster rise and fall times, and can operate up to around two times frequency of the planar inverters for the same peak-to-peak output voltage. WC NOR circuits have shown 70% higher peak-to-peak output voltage, over their planar counterparts, and WC pass transistor logic multiplexer circuit has shown more than five times faster high-to-low propagation delay compared with its planar counterpart at a similar peak-to-peak output voltage.
KAUST Department:
Integrated Disruptive Electronic Applications (IDEA) Lab; Integrated Nanotechnology Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Electrical Engineering Program; Sensors Lab
Citation:
Hanna AN, Hussain A, Omran H, Alsharif SM, Salama KN, et al. (2016) Wavy Channel TFT-Based Digital Circuits. IEEE Transactions on Electron Devices 63: 1550–1556. Available: http://dx.doi.org/10.1109/TED.2016.2527795.
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Journal:
IEEE Transactions on Electron Devices
KAUST Grant Number:
CRG-1-2012-HUS-008
Issue Date:
23-Feb-2016
DOI:
10.1109/TED.2016.2527795
Type:
Article
ISSN:
0018-9383; 1557-9646
Sponsors:
This work was supported by the King Abdullah University of Science and Technology within the Office of Sponsored Research under Grant CRG-1-2012-HUS-008. The review of this paper was arranged by Editor R. M. Todi.
Additional Links:
http://ieeexplore.ieee.org/document/7416011/
Appears in Collections:
Articles; Electrical Engineering Program; Integrated Nanotechnology Lab; Sensors Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorHanna, Amiren
dc.contributor.authorHussain, Aftab M.en
dc.contributor.authorHussain, Aftab M.en
dc.contributor.authorHussain, Aftab M.en
dc.contributor.authorOmran, Heshamen
dc.contributor.authorAlsharif, Sarah M.en
dc.contributor.authorSalama, Khaled N.en
dc.contributor.authorHussain, Muhammad Mustafaen
dc.date.accessioned2017-01-02T09:55:33Z-
dc.date.available2017-01-02T09:55:33Z-
dc.date.issued2016-02-23en
dc.identifier.citationHanna AN, Hussain A, Omran H, Alsharif SM, Salama KN, et al. (2016) Wavy Channel TFT-Based Digital Circuits. IEEE Transactions on Electron Devices 63: 1550–1556. Available: http://dx.doi.org/10.1109/TED.2016.2527795.en
dc.identifier.issn0018-9383en
dc.identifier.issn1557-9646en
dc.identifier.doi10.1109/TED.2016.2527795en
dc.identifier.urihttp://hdl.handle.net/10754/622615-
dc.description.abstractWe report a wavy channel (WC) architecture thin-film transistor-based digital circuitry using ZnO as a channel material. The novel architecture allows for extending device width by integrating vertical finlike substrate corrugations giving rise to 50% larger device width, without occupying extra chip area. The enhancement in the output drive current is 100%, when compared with conventional planar architecture for devices occupying the same chip area. The current increase is attributed to both the extra device width and 50% enhancement in field-effect mobility due to electrostatic gating effects. Fabricated inverters show that WC inverters can achieve two times the peak-to-peak output voltage for the same input when compared with planar devices. In addition, WC inverters show 30% faster rise and fall times, and can operate up to around two times frequency of the planar inverters for the same peak-to-peak output voltage. WC NOR circuits have shown 70% higher peak-to-peak output voltage, over their planar counterparts, and WC pass transistor logic multiplexer circuit has shown more than five times faster high-to-low propagation delay compared with its planar counterpart at a similar peak-to-peak output voltage.en
dc.description.sponsorshipThis work was supported by the King Abdullah University of Science and Technology within the Office of Sponsored Research under Grant CRG-1-2012-HUS-008. The review of this paper was arranged by Editor R. M. Todi.en
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.relation.urlhttp://ieeexplore.ieee.org/document/7416011/en
dc.subjectInverteren
dc.subjectNORen
dc.subjectpass transistor logic multiplexer (PTL MUX)en
dc.subjectthin-film transistor (TFT)en
dc.subjectwavyen
dc.subjectZnOen
dc.titleWavy Channel TFT-Based Digital Circuitsen
dc.typeArticleen
dc.contributor.departmentIntegrated Disruptive Electronic Applications (IDEA) Laben
dc.contributor.departmentIntegrated Nanotechnology Laben
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentSensors Laben
dc.identifier.journalIEEE Transactions on Electron Devicesen
kaust.authorHanna, Amiren
kaust.authorHussain, Aftab M.en
kaust.authorHussain, Aftab M.en
kaust.authorHussain, Aftab M.en
kaust.authorOmran, Heshamen
kaust.authorAlsharif, Sarah M.en
kaust.authorSalama, Khaled N.en
kaust.authorHussain, Muhammad Mustafaen
kaust.grant.numberCRG-1-2012-HUS-008en
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