Grain size effect of monolayer MoS2 transistors characterized by second harmonic generation mapping

Handle URI:
http://hdl.handle.net/10754/622553
Title:
Grain size effect of monolayer MoS2 transistors characterized by second harmonic generation mapping
Authors:
Lin, Chih-Pin; Lyu, Li-Syuan; Lin, Ching-Ting; Liu, Pang-Shiuan; Chang, Wen-Hao; Li, Lain-Jong ( 0000-0002-4059-7783 ) ; Hou, Tuo-Hung
Abstract:
We investigated different CVD-synthesized MoS2 films, aiming to correlate the device characteristics with the grain size. The grain size of MoS2 can be precisely characterized through nondestructive second harmonic generation mapping based on the degree of inversion symmetry. The devices with larger grains at the channel region show improved on/off current ratio, which can be explained by the less carrier scattering caused by the grain boundaries.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Chih-Pin Lin, Li-Syuan Lyu, Ching-Ting Lin, Pang-Shiuan Liu, Wen-Hao Chang, et al. (2015) Grain size effect of monolayer MoS2 transistors characterized by second harmonic generation mapping. 2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits. Available: http://dx.doi.org/10.1109/IPFA.2015.7224436.
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Journal:
2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits
Conference/Event name:
22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015
Issue Date:
27-Aug-2015
DOI:
10.1109/IPFA.2015.7224436
Type:
Conference Paper
Additional Links:
http://ieeexplore.ieee.org/document/7224436
Appears in Collections:
Conference Papers; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorLin, Chih-Pinen
dc.contributor.authorLyu, Li-Syuanen
dc.contributor.authorLin, Ching-Tingen
dc.contributor.authorLiu, Pang-Shiuanen
dc.contributor.authorChang, Wen-Haoen
dc.contributor.authorLi, Lain-Jongen
dc.contributor.authorHou, Tuo-Hungen
dc.date.accessioned2017-01-02T09:55:29Z-
dc.date.available2017-01-02T09:55:29Z-
dc.date.issued2015-08-27en
dc.identifier.citationChih-Pin Lin, Li-Syuan Lyu, Ching-Ting Lin, Pang-Shiuan Liu, Wen-Hao Chang, et al. (2015) Grain size effect of monolayer MoS2 transistors characterized by second harmonic generation mapping. 2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits. Available: http://dx.doi.org/10.1109/IPFA.2015.7224436.en
dc.identifier.doi10.1109/IPFA.2015.7224436en
dc.identifier.urihttp://hdl.handle.net/10754/622553-
dc.description.abstractWe investigated different CVD-synthesized MoS2 films, aiming to correlate the device characteristics with the grain size. The grain size of MoS2 can be precisely characterized through nondestructive second harmonic generation mapping based on the degree of inversion symmetry. The devices with larger grains at the channel region show improved on/off current ratio, which can be explained by the less carrier scattering caused by the grain boundaries.en
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.relation.urlhttp://ieeexplore.ieee.org/document/7224436en
dc.titleGrain size effect of monolayer MoS2 transistors characterized by second harmonic generation mappingen
dc.typeConference Paperen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journal2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuitsen
dc.conference.date2015-06-29 to 2015-07-02en
dc.conference.name22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015en
dc.conference.locationHsinchu, TWNen
dc.contributor.institutionDepartment of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwanen
dc.contributor.institutionDepartment of Electrophysics, National Chiao Tung University, Hsinchu, Taiwanen
dc.contributor.institutionTaiwan Consortium of Emergent Crystalline Materials (TCECM), Ministry of Science and Technology, Taiwanen
kaust.authorLi, Lain-Jongen
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