First demonstration of InGaP/InAlGaP based 608nm orange laser and 583nm yellow superluminescent diode

Handle URI:
http://hdl.handle.net/10754/622548
Title:
First demonstration of InGaP/InAlGaP based 608nm orange laser and 583nm yellow superluminescent diode
Authors:
Majid, Mohammed Abdul ( 0000-0003-2224-8982 ) ; Al-Jabr, Ahmad ( 0000-0002-3836-2184 ) ; Oubei, Hassan M. ( 0000-0001-6440-2488 ) ; Alias, Mohd Sharizal ( 0000-0003-1369-1421 ) ; Ng, Tien Khee ( 0000-0002-1480-6975 ) ; Anjum, Dalaver H.; Ooi, Boon S. ( 0000-0001-9606-5578 )
Abstract:
We report on the first demonstration of InGaP/InAlGaP based orange semiconductor laser (OSL) and yellow superluminescent diode (YSLD) emitting at a wavelength of 608nm and 583nm respectively. The total output power of YSLD is ∼4.5mW which is the highest ever reported power on this material system at room-temperature.
KAUST Department:
Photonics Laboratory; Advanced Nanofabrication and Thin Film Core Lab; Imaging and Characterization Core Lab
Citation:
Majid MA, Al-Jabr AA, Oubei HM, Alias MS, Ng TK, et al. (2015) First demonstration of InGaP/InAlGaP based 608nm orange laser and 583nm yellow superluminescent diode. 2015 IEEE Photonics Conference (IPC). Available: http://dx.doi.org/10.1109/IPCon.2015.7323633.
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Journal:
2015 IEEE Photonics Conference (IPC)
Conference/Event name:
IEEE Photonics Conference, IPC 2015
Issue Date:
12-Nov-2015
DOI:
10.1109/IPCon.2015.7323633
Type:
Conference Paper
Appears in Collections:
Conference Papers; Advanced Nanofabrication, Imaging and Characterization Core Lab; Photonics Laboratory

Full metadata record

DC FieldValue Language
dc.contributor.authorMajid, Mohammed Abdulen
dc.contributor.authorAl-Jabr, Ahmaden
dc.contributor.authorOubei, Hassan M.en
dc.contributor.authorAlias, Mohd Sharizalen
dc.contributor.authorNg, Tien Kheeen
dc.contributor.authorAnjum, Dalaver H.en
dc.contributor.authorOoi, Boon S.en
dc.date.accessioned2017-01-02T09:55:29Z-
dc.date.available2017-01-02T09:55:29Z-
dc.date.issued2015-11-12en
dc.identifier.citationMajid MA, Al-Jabr AA, Oubei HM, Alias MS, Ng TK, et al. (2015) First demonstration of InGaP/InAlGaP based 608nm orange laser and 583nm yellow superluminescent diode. 2015 IEEE Photonics Conference (IPC). Available: http://dx.doi.org/10.1109/IPCon.2015.7323633.en
dc.identifier.doi10.1109/IPCon.2015.7323633en
dc.identifier.urihttp://hdl.handle.net/10754/622548-
dc.description.abstractWe report on the first demonstration of InGaP/InAlGaP based orange semiconductor laser (OSL) and yellow superluminescent diode (YSLD) emitting at a wavelength of 608nm and 583nm respectively. The total output power of YSLD is ∼4.5mW which is the highest ever reported power on this material system at room-temperature.en
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.subjectAnnealingen
dc.subjectCurrent densityen
dc.subjectLasersen
dc.subjectOptical device fabricationen
dc.subjectPhotonic band gapen
dc.subjectPower amplifiersen
dc.subjectPower generationen
dc.titleFirst demonstration of InGaP/InAlGaP based 608nm orange laser and 583nm yellow superluminescent diodeen
dc.typeConference Paperen
dc.contributor.departmentPhotonics Laboratoryen
dc.contributor.departmentAdvanced Nanofabrication and Thin Film Core Laben
dc.contributor.departmentImaging and Characterization Core Laben
dc.identifier.journal2015 IEEE Photonics Conference (IPC)en
dc.conference.date2015-08-30 to 2015-08-31en
dc.conference.nameIEEE Photonics Conference, IPC 2015en
dc.conference.locationReston, VA, USAen
kaust.authorMajid, Mohammed Abdulen
kaust.authorAl-Jabr, Ahmaden
kaust.authorOubei, Hassan M.en
kaust.authorAlias, Mohd Sharizalen
kaust.authorNg, Tien Kheeen
kaust.authorAnjum, Dalaver H.en
kaust.authorOoi, Boon S.en
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