Electrothermal Frequency Modulated Resonator for Mechanical Memory

Handle URI:
http://hdl.handle.net/10754/622541
Title:
Electrothermal Frequency Modulated Resonator for Mechanical Memory
Authors:
Hafiz, Md Abdullah Al ( 0000-0002-1257-5093 ) ; Kosuru, Lakshmoji ( 0000-0003-3813-9262 ) ; Younis, Mohammad I. ( 0000-0002-9491-1838 )
Abstract:
In this paper, we experimentally demonstrate a mechanical memory device based on the nonlinear dynamics of an electrostatically actuated microelectromechanical resonator utilizing an electrothermal frequency modulation scheme. The microstructure is deliberately fabricated as an in-plane shallow arch to achieve geometric quadratic nonlinearity. We exploit this inherent nonlinearity of the arch and drive it at resonance with minimal actuation voltage into the nonlinear regime, thereby creating softening behavior, hysteresis, and coexistence of states. The hysteretic frequency band is controlled by the electrothermal actuation voltage. Binary values are assigned to the two allowed dynamical states on the hysteretic response curve of the arch resonator with respect to the electrothermal actuation voltage. Set-and-reset operations of the memory states are performed by applying controlled dc pulses provided through the electrothermal actuation scheme, while the read-out operation is performed simultaneously by measuring the motional current through a capacitive detection technique. This novel memory device has the advantages of operating at low voltages and under room temperature. [2016-0043]
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Al Hafiz MA, Kosuru L, Younis MI (2016) Electrothermal Frequency Modulated Resonator for Mechanical Memory. Journal of Microelectromechanical Systems 25: 877–883. Available: http://dx.doi.org/10.1109/JMEMS.2016.2598357.
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Journal:
Journal of Microelectromechanical Systems
Issue Date:
18-Aug-2016
DOI:
10.1109/JMEMS.2016.2598357
Type:
Article
ISSN:
1057-7157; 1941-0158
Additional Links:
http://ieeexplore.ieee.org/document/7547384/
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorHafiz, Md Abdullah Alen
dc.contributor.authorKosuru, Lakshmojien
dc.contributor.authorYounis, Mohammad I.en
dc.date.accessioned2017-01-02T09:55:29Z-
dc.date.available2017-01-02T09:55:29Z-
dc.date.issued2016-08-18en
dc.identifier.citationAl Hafiz MA, Kosuru L, Younis MI (2016) Electrothermal Frequency Modulated Resonator for Mechanical Memory. Journal of Microelectromechanical Systems 25: 877–883. Available: http://dx.doi.org/10.1109/JMEMS.2016.2598357.en
dc.identifier.issn1057-7157en
dc.identifier.issn1941-0158en
dc.identifier.doi10.1109/JMEMS.2016.2598357en
dc.identifier.urihttp://hdl.handle.net/10754/622541-
dc.description.abstractIn this paper, we experimentally demonstrate a mechanical memory device based on the nonlinear dynamics of an electrostatically actuated microelectromechanical resonator utilizing an electrothermal frequency modulation scheme. The microstructure is deliberately fabricated as an in-plane shallow arch to achieve geometric quadratic nonlinearity. We exploit this inherent nonlinearity of the arch and drive it at resonance with minimal actuation voltage into the nonlinear regime, thereby creating softening behavior, hysteresis, and coexistence of states. The hysteretic frequency band is controlled by the electrothermal actuation voltage. Binary values are assigned to the two allowed dynamical states on the hysteretic response curve of the arch resonator with respect to the electrothermal actuation voltage. Set-and-reset operations of the memory states are performed by applying controlled dc pulses provided through the electrothermal actuation scheme, while the read-out operation is performed simultaneously by measuring the motional current through a capacitive detection technique. This novel memory device has the advantages of operating at low voltages and under room temperature. [2016-0043]en
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.relation.urlhttp://ieeexplore.ieee.org/document/7547384/en
dc.subjectArch shaped microbeamen
dc.subjectElectrothermal frequency modulationen
dc.subjectmechanical memoryen
dc.titleElectrothermal Frequency Modulated Resonator for Mechanical Memoryen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalJournal of Microelectromechanical Systemsen
kaust.authorHafiz, Md Abdullah Alen
kaust.authorKosuru, Lakshmojien
kaust.authorYounis, Mohammad I.en
All Items in KAUST are protected by copyright, with all rights reserved, unless otherwise indicated.