Current enhancement in crystalline silicon photovoltaic by low-cost nickel silicide back contact

Handle URI:
http://hdl.handle.net/10754/622530
Title:
Current enhancement in crystalline silicon photovoltaic by low-cost nickel silicide back contact
Authors:
Bahabry, R. R.; Gumus, A.; Kutbee, A. T.; Wehbe, N.; Ahmed, S. M.; Ghoneim, M. T.; Lee, K. -T.; Rogers, J. A.; Hussain, M. M.
Abstract:
We report short circuit current (Jsc) enhancement in crystalline silicon (C-Si) photovoltaic (PV) using low-cost Ohmic contact engineering by integration of Nickel mono-silicide (NiSi) for back contact metallization as an alternative to the status quo of using expensive screen printed silver (Ag). We show 2.6 mA/cm2 enhancement in the short circuit current (Jsc) and 1.2 % increment in the efficiency by improving the current collection due to the low specific contact resistance of the NiSi on the heavily Boron (B) doped Silicon (Si) interface.
KAUST Department:
Imaging and Characterization Core Lab
Citation:
Bahabry RR, Gumus A, Kutbee AT, Wehbe N, Ahmed SM, et al. (2016) Current enhancement in crystalline silicon photovoltaic by low-cost nickel silicide back contact. 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC). Available: http://dx.doi.org/10.1109/PVSC.2016.7749668.
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Journal:
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)
Conference/Event name:
43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
Issue Date:
30-Nov-2016
DOI:
10.1109/PVSC.2016.7749668
Type:
Conference Paper
Additional Links:
http://ieeexplore.ieee.org/document/7749668/
Appears in Collections:
Conference Papers; Advanced Nanofabrication, Imaging and Characterization Core Lab

Full metadata record

DC FieldValue Language
dc.contributor.authorBahabry, R. R.en
dc.contributor.authorGumus, A.en
dc.contributor.authorKutbee, A. T.en
dc.contributor.authorWehbe, N.en
dc.contributor.authorAhmed, S. M.en
dc.contributor.authorGhoneim, M. T.en
dc.contributor.authorLee, K. -T.en
dc.contributor.authorRogers, J. A.en
dc.contributor.authorHussain, M. M.en
dc.date.accessioned2017-01-02T09:55:28Z-
dc.date.available2017-01-02T09:55:28Z-
dc.date.issued2016-11-30en
dc.identifier.citationBahabry RR, Gumus A, Kutbee AT, Wehbe N, Ahmed SM, et al. (2016) Current enhancement in crystalline silicon photovoltaic by low-cost nickel silicide back contact. 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC). Available: http://dx.doi.org/10.1109/PVSC.2016.7749668.en
dc.identifier.doi10.1109/PVSC.2016.7749668en
dc.identifier.urihttp://hdl.handle.net/10754/622530-
dc.description.abstractWe report short circuit current (Jsc) enhancement in crystalline silicon (C-Si) photovoltaic (PV) using low-cost Ohmic contact engineering by integration of Nickel mono-silicide (NiSi) for back contact metallization as an alternative to the status quo of using expensive screen printed silver (Ag). We show 2.6 mA/cm2 enhancement in the short circuit current (Jsc) and 1.2 % increment in the efficiency by improving the current collection due to the low specific contact resistance of the NiSi on the heavily Boron (B) doped Silicon (Si) interface.en
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.relation.urlhttp://ieeexplore.ieee.org/document/7749668/en
dc.subjectscreen printed silveren
dc.subjectContact engineeringen
dc.subjectCMOSen
dc.subjectcrystlaine silcon photovoltaicen
dc.subjectnickel silicideen
dc.titleCurrent enhancement in crystalline silicon photovoltaic by low-cost nickel silicide back contacten
dc.typeConference Paperen
dc.contributor.departmentImaging and Characterization Core Laben
dc.identifier.journal2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)en
dc.conference.date2016-06-05 to 2016-06-10en
dc.conference.name43rd IEEE Photovoltaic Specialists Conference, PVSC 2016en
dc.conference.locationPortland, OR, USAen
dc.contributor.institutionMaterial Science and Engineeringen
dc.contributor.institutionIntegrated Nanotechnology Laben
dc.contributor.institutionElectrical Engineeringen
dc.contributor.institutionDepartment of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USAen
kaust.authorWehbe, N.en
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