A Generalized Theory Explains the Anomalous Suns–Voc Response of Si Heterojunction Solar Cells

Handle URI:
http://hdl.handle.net/10754/622503
Title:
A Generalized Theory Explains the Anomalous Suns–Voc Response of Si Heterojunction Solar Cells
Authors:
Chavali, Raghu Vamsi Krishna; Li, Jian V.; Battaglia, Corsin; De Wolf, Stefaan ( 0000-0003-1619-9061 ) ; Gray, Jeffery Lynn; Alam, Muhammad Ashraful
Abstract:
Suns–Voc measurements exclude parasitic series resistance effects and are, therefore, frequently used to study the intrinsic potential of a given photovoltaic technology. However, when applied to a-Si/c-Si heterojunction (SHJ) solar cells, the Suns–Voc curves often feature a peculiar turnaround at high illumination intensities. Generally, this turn-around is attributed to extrinsic Schottky contacts that should disappear with process improvement. In this paper, we demonstrate that this voltage turnaround may be an intrinsic feature of SHJ solar cells, arising from the heterojunction (HJ), as well as its associated carrier-transport barriers, inherent to SHJ devices. We use numerical simulations to explore the full current–voltage (J–V) characteristics under different illumination and ambient temperature conditions. Using these characteristics, we establish the voltage and illumination-intensity bias, as well as temperature conditions necessary to observe the voltage turnaround in these cells. We validate our turnaround hypothesis using an extensive set of experiments on a high-efficiency SHJ solar cell and a molybdenum oxide (MoOx) based hole collector HJ solar cell. Our work consolidates Suns–Voc as a powerful characterization tool for extracting the cell parameters that limit efficiency in HJ devices.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program; KAUST Solar Center (KSC); KAUST Solar Center (KSC), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
Citation:
Chavali RVK, Li JV, Battaglia C, De Wolf S, Gray JL, et al. (2017) A Generalized Theory Explains the Anomalous Suns–Voc Response of Si Heterojunction Solar Cells. IEEE Journal of Photovoltaics 7: 169–176. Available: http://dx.doi.org/10.1109/JPHOTOV.2016.2621346.
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Journal:
IEEE Journal of Photovoltaics
Issue Date:
30-Nov-2016
DOI:
10.1109/JPHOTOV.2016.2621346
Type:
Article
ISSN:
2156-3381; 2156-3403
Sponsors:
This work was supported in part under the U.S.–India Partnership to Advance Clean Energy-Research (PACE-R) for the Solar Energy Research Institute for India and the United States (SERIIUS), funded jointly by the U.S. Department of Energy (Office of Science, Office of Basic Energy Sciences, and Energy Effi- ciency and Renewable Energy, Solar Energy Technology Program, under Sub- contract DE-AC36-08GO28308 to the National Renewable Energy Laboratory, Golden, CO, USA) and the Government of India through the Department of Science and Technology under Subcontract IUSSTF/JCERDC-SERIIUS/2012 dated November 22, 2012.
Additional Links:
http://ieeexplore.ieee.org/document/7756368/
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program; KAUST Solar Center (KSC)

Full metadata record

DC FieldValue Language
dc.contributor.authorChavali, Raghu Vamsi Krishnaen
dc.contributor.authorLi, Jian V.en
dc.contributor.authorBattaglia, Corsinen
dc.contributor.authorDe Wolf, Stefaanen
dc.contributor.authorGray, Jeffery Lynnen
dc.contributor.authorAlam, Muhammad Ashrafulen
dc.date.accessioned2017-01-02T09:55:27Z-
dc.date.available2017-01-02T09:55:27Z-
dc.date.issued2016-11-30en
dc.identifier.citationChavali RVK, Li JV, Battaglia C, De Wolf S, Gray JL, et al. (2017) A Generalized Theory Explains the Anomalous Suns–Voc Response of Si Heterojunction Solar Cells. IEEE Journal of Photovoltaics 7: 169–176. Available: http://dx.doi.org/10.1109/JPHOTOV.2016.2621346.en
dc.identifier.issn2156-3381en
dc.identifier.issn2156-3403en
dc.identifier.doi10.1109/JPHOTOV.2016.2621346en
dc.identifier.urihttp://hdl.handle.net/10754/622503-
dc.description.abstractSuns–Voc measurements exclude parasitic series resistance effects and are, therefore, frequently used to study the intrinsic potential of a given photovoltaic technology. However, when applied to a-Si/c-Si heterojunction (SHJ) solar cells, the Suns–Voc curves often feature a peculiar turnaround at high illumination intensities. Generally, this turn-around is attributed to extrinsic Schottky contacts that should disappear with process improvement. In this paper, we demonstrate that this voltage turnaround may be an intrinsic feature of SHJ solar cells, arising from the heterojunction (HJ), as well as its associated carrier-transport barriers, inherent to SHJ devices. We use numerical simulations to explore the full current–voltage (J–V) characteristics under different illumination and ambient temperature conditions. Using these characteristics, we establish the voltage and illumination-intensity bias, as well as temperature conditions necessary to observe the voltage turnaround in these cells. We validate our turnaround hypothesis using an extensive set of experiments on a high-efficiency SHJ solar cell and a molybdenum oxide (MoOx) based hole collector HJ solar cell. Our work consolidates Suns–Voc as a powerful characterization tool for extracting the cell parameters that limit efficiency in HJ devices.en
dc.description.sponsorshipThis work was supported in part under the U.S.–India Partnership to Advance Clean Energy-Research (PACE-R) for the Solar Energy Research Institute for India and the United States (SERIIUS), funded jointly by the U.S. Department of Energy (Office of Science, Office of Basic Energy Sciences, and Energy Effi- ciency and Renewable Energy, Solar Energy Technology Program, under Sub- contract DE-AC36-08GO28308 to the National Renewable Energy Laboratory, Golden, CO, USA) and the Government of India through the Department of Science and Technology under Subcontract IUSSTF/JCERDC-SERIIUS/2012 dated November 22, 2012.en
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.relation.urlhttp://ieeexplore.ieee.org/document/7756368/en
dc.subjectSuns–Vocen
dc.subjectAmorphous semiconductorsen
dc.subjectcurrent–voltage (J–V) characteristicsen
dc.subjectheterojunctions (HJs)en
dc.subjectmodeling and simulationen
dc.subjectsiliconen
dc.subjectsolar cellsen
dc.subjectphotovoltaicsen
dc.titleA Generalized Theory Explains the Anomalous Suns–Voc Response of Si Heterojunction Solar Cellsen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentKAUST Solar Center (KSC)en
dc.contributor.departmentKAUST Solar Center (KSC), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabiaen
dc.identifier.journalIEEE Journal of Photovoltaicsen
dc.contributor.institutionSchool of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907 USAen
dc.contributor.institutionIntel Corporation, Boise, ID 83707-0006 USAen
dc.contributor.institutionDepartment of Electrical Engineering, Texas State University, San Marcos, TX 78666 USAen
dc.contributor.institutionLaboratory Materials for Energy Conversion, Empa-Swiss Federal Laboratories for Materials Science and Technology, 8600 Dübendorf, Switzerlanden
kaust.authorDe Wolf, Stefaanen
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