Mobility controlled linear magnetoresistance with 3D anisotropy in a layered graphene pallet

Handle URI:
http://hdl.handle.net/10754/622430
Title:
Mobility controlled linear magnetoresistance with 3D anisotropy in a layered graphene pallet
Authors:
Zhang, Qiang ( 0000-0001-8519-5158 ) ; Li, Peng ( 0000-0001-8633-9045 ) ; He, Xin ( 0000-0001-7009-2826 ) ; Li, Jun; Wen, Yan; Ren, Wencai; Cheng, Hui Ming; Yang, Yang; Al-Hadeethi, Yas F.; Zhang, Xixiang ( 0000-0002-3478-6414 )
Abstract:
A bulk sample of pressed graphene sheets was prepared under hydraulic pressure (similar to 150 MPa). The cross-section of the sample demonstrates a layered structure, which leads to 3D electrical transport properties with anisotropic mobility. The electrical transport properties of the sample were measured over a wide temperature (2-400 K) and magnetic field (-140 kOe <= H <= 140 kOe) range. The magnetoresistance measured at a fixed temperature can be described by R(H, theta) = R(epsilon H-theta, 0) with epsilon(theta) =(cos(2)theta + gamma(-2) sin(2)theta)(1/2), where gamma is the mobility anisotropy constant and theta is the angle between the normal of the sample plane and the magnetic field. The large linear magnetoresistance (up to 36.9% at 400 K and 140 kOe) observed at high fields is ascribed to a classical magnetoresistance caused by mobility fluctuation (Delta mu). The magnetoresistance value at 140 kOe was related to the average mobility (<mu >) because of the condition Delta mu < <mu >. The carrier concentration remained constant and the temperature-dependent resistivity was proportional to the average mobility, as verified by Kohler's rule. Anisotropic dephasing length was deduced from weak localization observed at low temperatures.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Imaging and Characterization Core Lab
Citation:
Zhang Q, Li P, He X, Li J, Wen Y, et al. (2016) Mobility controlled linear magnetoresistance with 3D anisotropy in a layered graphene pallet. Journal of Physics D: Applied Physics 49: 425005. Available: http://dx.doi.org/10.1088/0022-3727/49/42/425005.
Publisher:
IOP Publishing
Journal:
Journal of Physics D: Applied Physics
Issue Date:
27-Sep-2016
DOI:
10.1088/0022-3727/49/42/425005
Type:
Article
ISSN:
0022-3727; 1361-6463
Sponsors:
The research reported in this paper was supported by King Abdullah University of Science and Technology (KAUST).
Additional Links:
http://iopscience.iop.org/article/10.1088/0022-3727/49/42/425005/meta;jsessionid=223DB7AA455B018AAFC8855B0CC9B5DA.c1.iopscience.cld.iop.org
Appears in Collections:
Articles; Advanced Nanofabrication, Imaging and Characterization Core Lab; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorZhang, Qiangen
dc.contributor.authorLi, Pengen
dc.contributor.authorHe, Xinen
dc.contributor.authorLi, Junen
dc.contributor.authorWen, Yanen
dc.contributor.authorRen, Wencaien
dc.contributor.authorCheng, Hui Mingen
dc.contributor.authorYang, Yangen
dc.contributor.authorAl-Hadeethi, Yas F.en
dc.contributor.authorZhang, Xixiangen
dc.date.accessioned2017-01-02T09:28:30Z-
dc.date.available2017-01-02T09:28:30Z-
dc.date.issued2016-09-27en
dc.identifier.citationZhang Q, Li P, He X, Li J, Wen Y, et al. (2016) Mobility controlled linear magnetoresistance with 3D anisotropy in a layered graphene pallet. Journal of Physics D: Applied Physics 49: 425005. Available: http://dx.doi.org/10.1088/0022-3727/49/42/425005.en
dc.identifier.issn0022-3727en
dc.identifier.issn1361-6463en
dc.identifier.doi10.1088/0022-3727/49/42/425005en
dc.identifier.urihttp://hdl.handle.net/10754/622430-
dc.description.abstractA bulk sample of pressed graphene sheets was prepared under hydraulic pressure (similar to 150 MPa). The cross-section of the sample demonstrates a layered structure, which leads to 3D electrical transport properties with anisotropic mobility. The electrical transport properties of the sample were measured over a wide temperature (2-400 K) and magnetic field (-140 kOe <= H <= 140 kOe) range. The magnetoresistance measured at a fixed temperature can be described by R(H, theta) = R(epsilon H-theta, 0) with epsilon(theta) =(cos(2)theta + gamma(-2) sin(2)theta)(1/2), where gamma is the mobility anisotropy constant and theta is the angle between the normal of the sample plane and the magnetic field. The large linear magnetoresistance (up to 36.9% at 400 K and 140 kOe) observed at high fields is ascribed to a classical magnetoresistance caused by mobility fluctuation (Delta mu). The magnetoresistance value at 140 kOe was related to the average mobility (<mu >) because of the condition Delta mu < <mu >. The carrier concentration remained constant and the temperature-dependent resistivity was proportional to the average mobility, as verified by Kohler's rule. Anisotropic dephasing length was deduced from weak localization observed at low temperatures.en
dc.description.sponsorshipThe research reported in this paper was supported by King Abdullah University of Science and Technology (KAUST).en
dc.publisherIOP Publishingen
dc.relation.urlhttp://iopscience.iop.org/article/10.1088/0022-3727/49/42/425005/meta;jsessionid=223DB7AA455B018AAFC8855B0CC9B5DA.c1.iopscience.cld.iop.orgen
dc.subjectgraphene sheetsen
dc.subject3D anisotropyen
dc.subjectlinear magnetoresistanceen
dc.subjectmobility fluctuationen
dc.titleMobility controlled linear magnetoresistance with 3D anisotropy in a layered graphene palleten
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentImaging and Characterization Core Laben
dc.identifier.journalJournal of Physics D: Applied Physicsen
dc.contributor.institutionShenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, Chinaen
dc.contributor.institutionDepartment of Physics, King Abdulaziz University, Jeddah, Makkah, Saudi Arabiaen
kaust.authorZhang, Qiangen
kaust.authorLi, Pengen
kaust.authorHe, Xinen
kaust.authorLi, Junen
kaust.authorWen, Yanen
kaust.authorYang, Yangen
kaust.authorZhang, Xixiangen
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