Laterally Stitched Heterostructures of Transition Metal Dichalcogenide: Chemical Vapor Deposition Growth on Lithographically Patterned Area

Handle URI:
http://hdl.handle.net/10754/622423
Title:
Laterally Stitched Heterostructures of Transition Metal Dichalcogenide: Chemical Vapor Deposition Growth on Lithographically Patterned Area
Authors:
Li, Henan; Li, Peng ( 0000-0001-8633-9045 ) ; Huang, Jing Kai; Li, Ming-yang; Yang, Chih-Wen; Shi, Yumeng; Zhang, Xixiang ( 0000-0002-3478-6414 ) ; Li, Lain-Jong ( 0000-0002-4059-7783 )
Abstract:
Two-dimensional transition metal dichalcogenides (TMDCs) have shown great promise in electronics and optoelectronics due to their unique electrical and optical properties. Heterostructured TMDC layers such as the laterally stitched TMDCs offer the advantages of better electronic contact and easier band offset tuning. Here, we demonstrate a photoresist-free focused ion beam (FIB) method to pattern as-grown TMDC monolayers by chemical vapor deposition, where the exposed edges from FIB etching serve as the seeds for growing a second TMDC material to form desired lateral heterostructures with arbitrary layouts. The proposed lithographic and growth processes offer better controllability for fabrication of the TMDC heterostrucuture, which enables the construction of devices based on heterostructural monolayers. © 2016 American Chemical Society.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Li H, Li P, Huang J-K, Li M-Y, Yang C-W, et al. (2016) Laterally Stitched Heterostructures of Transition Metal Dichalcogenide: Chemical Vapor Deposition Growth on Lithographically Patterned Area. ACS Nano 10: 10516–10523. Available: http://dx.doi.org/10.1021/acsnano.6b06496.
Publisher:
American Chemical Society (ACS)
Journal:
ACS Nano
Issue Date:
31-Oct-2016
DOI:
10.1021/acsnano.6b06496
Type:
Article
ISSN:
1936-0851; 1936-086X
Sponsors:
The authors thank KAUST for the support. Y.S. acknowledges the support from the National Natural Science Foundation of China (Grant No. 51602200). This work was partially supported by the Science and Technology Planning Project of Guangdong Province (Grant No. 2016B050501005).
Additional Links:
http://pubs.acs.org/doi/full/10.1021/acsnano.6b06496
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorLi, Henanen
dc.contributor.authorLi, Pengen
dc.contributor.authorHuang, Jing Kaien
dc.contributor.authorLi, Ming-yangen
dc.contributor.authorYang, Chih-Wenen
dc.contributor.authorShi, Yumengen
dc.contributor.authorZhang, Xixiangen
dc.contributor.authorLi, Lain-Jongen
dc.date.accessioned2017-01-02T09:28:30Z-
dc.date.available2017-01-02T09:28:30Z-
dc.date.issued2016-10-31en
dc.identifier.citationLi H, Li P, Huang J-K, Li M-Y, Yang C-W, et al. (2016) Laterally Stitched Heterostructures of Transition Metal Dichalcogenide: Chemical Vapor Deposition Growth on Lithographically Patterned Area. ACS Nano 10: 10516–10523. Available: http://dx.doi.org/10.1021/acsnano.6b06496.en
dc.identifier.issn1936-0851en
dc.identifier.issn1936-086Xen
dc.identifier.doi10.1021/acsnano.6b06496en
dc.identifier.urihttp://hdl.handle.net/10754/622423-
dc.description.abstractTwo-dimensional transition metal dichalcogenides (TMDCs) have shown great promise in electronics and optoelectronics due to their unique electrical and optical properties. Heterostructured TMDC layers such as the laterally stitched TMDCs offer the advantages of better electronic contact and easier band offset tuning. Here, we demonstrate a photoresist-free focused ion beam (FIB) method to pattern as-grown TMDC monolayers by chemical vapor deposition, where the exposed edges from FIB etching serve as the seeds for growing a second TMDC material to form desired lateral heterostructures with arbitrary layouts. The proposed lithographic and growth processes offer better controllability for fabrication of the TMDC heterostrucuture, which enables the construction of devices based on heterostructural monolayers. © 2016 American Chemical Society.en
dc.description.sponsorshipThe authors thank KAUST for the support. Y.S. acknowledges the support from the National Natural Science Foundation of China (Grant No. 51602200). This work was partially supported by the Science and Technology Planning Project of Guangdong Province (Grant No. 2016B050501005).en
dc.publisherAmerican Chemical Society (ACS)en
dc.relation.urlhttp://pubs.acs.org/doi/full/10.1021/acsnano.6b06496en
dc.subjectchemical vapor depositionen
dc.subjectheterostructureen
dc.subjecttransition metal dichalcogenidesen
dc.subjecttwo-dimensional materialsen
dc.titleLaterally Stitched Heterostructures of Transition Metal Dichalcogenide: Chemical Vapor Deposition Growth on Lithographically Patterned Areaen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalACS Nanoen
dc.contributor.institutionSZU-NUS Collaborative Innovation Center for Optoelectronic Science and Technology, Key Laboratory of Optoelectronic Devices and Systems, Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen, Chinaen
kaust.authorLi, Henanen
kaust.authorLi, Pengen
kaust.authorHuang, Jing Kaien
kaust.authorLi, Ming-yangen
kaust.authorYang, Chih-Wenen
kaust.authorZhang, Xixiangen
kaust.authorLi, Lain-Jongen
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