Enhanced ZnO Thin-Film Transistor Performance Using Bilayer Gate Dielectrics

Handle URI:
http://hdl.handle.net/10754/622399
Title:
Enhanced ZnO Thin-Film Transistor Performance Using Bilayer Gate Dielectrics
Authors:
Alshammari, Fwzah Hamud; Nayak, Pradipta K.; Wang, Zhenwei; Alshareef, Husam N. ( 0000-0001-5029-2142 )
Abstract:
We report ZnO TFTs using Al2O3/Ta2O5 bilayer gate dielectrics grown by atomic layer deposition. The saturation mobility of single layer Ta2O5 dielectric TFT was 0.1 cm2 V-1 s-1, but increased to 13.3 cm2 V-1 s-1 using Al2O3/Ta2O5 bilayer dielectric with significantly lower leakage current and hysteresis. We show that point defects present in ZnO film, particularly VZn, are the main reason for the poor TFT performance with single layer dielectric, although interfacial roughness scattering effects cannot be ruled out. Our approach combines the high dielectric constant of Ta2O5 and the excellent Al2O3/ZnO interface quality, resulting in improved device performance. © 2016 American Chemical Society.
KAUST Department:
Materials Science and Engineering Program
Citation:
Alshammari FH, Nayak PK, Wang Z, Alshareef HN (2016) Enhanced ZnO Thin-Film Transistor Performance Using Bilayer Gate Dielectrics. ACS Applied Materials & Interfaces 8: 22751–22755. Available: http://dx.doi.org/10.1021/acsami.6b06498.
Publisher:
American Chemical Society (ACS)
Journal:
ACS Applied Materials & Interfaces
Issue Date:
24-Aug-2016
DOI:
10.1021/acsami.6b06498
Type:
Article
ISSN:
1944-8244; 1944-8252
Sponsors:
Research reported in this publication was supported by King Abdullah University of Science and Technology (KAUST). The authors thank the staff of the Nanofabrication Facility and imaging and characterization at KAUST, particularly Ahad Syed and Nimer Wehbe, for their excellent support.
Additional Links:
http://pubs.acs.org/doi/full/10.1021/acsami.6b06498
Appears in Collections:
Articles; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorAlshammari, Fwzah Hamuden
dc.contributor.authorNayak, Pradipta K.en
dc.contributor.authorWang, Zhenweien
dc.contributor.authorAlshareef, Husam N.en
dc.date.accessioned2017-01-02T09:28:28Z-
dc.date.available2017-01-02T09:28:28Z-
dc.date.issued2016-08-24en
dc.identifier.citationAlshammari FH, Nayak PK, Wang Z, Alshareef HN (2016) Enhanced ZnO Thin-Film Transistor Performance Using Bilayer Gate Dielectrics. ACS Applied Materials & Interfaces 8: 22751–22755. Available: http://dx.doi.org/10.1021/acsami.6b06498.en
dc.identifier.issn1944-8244en
dc.identifier.issn1944-8252en
dc.identifier.doi10.1021/acsami.6b06498en
dc.identifier.urihttp://hdl.handle.net/10754/622399-
dc.description.abstractWe report ZnO TFTs using Al2O3/Ta2O5 bilayer gate dielectrics grown by atomic layer deposition. The saturation mobility of single layer Ta2O5 dielectric TFT was 0.1 cm2 V-1 s-1, but increased to 13.3 cm2 V-1 s-1 using Al2O3/Ta2O5 bilayer dielectric with significantly lower leakage current and hysteresis. We show that point defects present in ZnO film, particularly VZn, are the main reason for the poor TFT performance with single layer dielectric, although interfacial roughness scattering effects cannot be ruled out. Our approach combines the high dielectric constant of Ta2O5 and the excellent Al2O3/ZnO interface quality, resulting in improved device performance. © 2016 American Chemical Society.en
dc.description.sponsorshipResearch reported in this publication was supported by King Abdullah University of Science and Technology (KAUST). The authors thank the staff of the Nanofabrication Facility and imaging and characterization at KAUST, particularly Ahad Syed and Nimer Wehbe, for their excellent support.en
dc.publisherAmerican Chemical Society (ACS)en
dc.relation.urlhttp://pubs.acs.org/doi/full/10.1021/acsami.6b06498en
dc.subjectaluminum oxideen
dc.subjectbilayeren
dc.subjecttantalum oxideen
dc.subjectthin film transistoren
dc.subjectzinc oxideen
dc.titleEnhanced ZnO Thin-Film Transistor Performance Using Bilayer Gate Dielectricsen
dc.typeArticleen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.identifier.journalACS Applied Materials & Interfacesen
kaust.authorAlshammari, Fwzah Hamuden
kaust.authorNayak, Pradipta K.en
kaust.authorWang, Zhenweien
kaust.authorAlshareef, Husam N.en
All Items in KAUST are protected by copyright, with all rights reserved, unless otherwise indicated.