Large-area few-layer MoS 2 deposited by sputtering

Handle URI:
http://hdl.handle.net/10754/622354
Title:
Large-area few-layer MoS 2 deposited by sputtering
Authors:
Huang, Jyun-Hong; Chen, Hsing-Hung; Liu, Pang-Shiuan; Lu, Li-Syuan; Wu, Chien-Ting; Chou, Cheng-Tung; Lee, Yao-Jen; Li, Lain-Jong ( 0000-0002-4059-7783 ) ; Chang, Wen-Hao; Hou, Tuo-Hung
Abstract:
Direct magnetron sputtering of transition metal dichalcogenide targets is proposed as a new approach for depositing large-area two-dimensional layered materials. Bilayer to few-layer MoS2 deposited by magnetron sputtering followed by post-deposition annealing shows superior area scalability over 20 cm(2) and layer-by-layer controllability. High crystallinity of layered MoS2 was confirmed by Raman, photo-luminescence, and transmission electron microscopy analysis. The sputtering temperature and annealing ambience were found to play an important role in the film quality. The top-gate field-effect transistor by using the layered MoS2 channel shows typical n-type characteristics with a current on/off ratio of approximately 10(4). The relatively low mobility is attributed to the small grain size of 0.1-1 mu m with a trap charge density in grain boundaries of the order of 10(13) cm(-2).
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Huang J-H, Chen H-H, Liu P-S, Lu L-S, Wu C-T, et al. (2016) Large-area few-layer MoS 2 deposited by sputtering . Materials Research Express 3: 065007. Available: http://dx.doi.org/10.1088/2053-1591/3/6/065007.
Publisher:
IOP Publishing
Journal:
Materials Research Express
Issue Date:
6-Jun-2016
DOI:
10.1088/2053-1591/3/6/065007
Type:
Article
ISSN:
2053-1591
Sponsors:
This work was supported by Ministry of Science and Technology of Taiwan, Republic of China, under grant MOST103-2221-E-009-221-MY3 and 102-2119-M-001-005-MY3, and by NCTU-UCB I-RiCE program, under grant MOST104-2911-I-009-301. The authors are grateful to the Nano Facility Center at National Chiao Tung University and National Nano Device Laboratories, where the experiments in this paper were performed.
Additional Links:
http://iopscience.iop.org/article/10.1088/2053-1591/3/6/065007
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorHuang, Jyun-Hongen
dc.contributor.authorChen, Hsing-Hungen
dc.contributor.authorLiu, Pang-Shiuanen
dc.contributor.authorLu, Li-Syuanen
dc.contributor.authorWu, Chien-Tingen
dc.contributor.authorChou, Cheng-Tungen
dc.contributor.authorLee, Yao-Jenen
dc.contributor.authorLi, Lain-Jongen
dc.contributor.authorChang, Wen-Haoen
dc.contributor.authorHou, Tuo-Hungen
dc.date.accessioned2017-01-02T09:28:26Z-
dc.date.available2017-01-02T09:28:26Z-
dc.date.issued2016-06-06en
dc.identifier.citationHuang J-H, Chen H-H, Liu P-S, Lu L-S, Wu C-T, et al. (2016) Large-area few-layer MoS 2 deposited by sputtering . Materials Research Express 3: 065007. Available: http://dx.doi.org/10.1088/2053-1591/3/6/065007.en
dc.identifier.issn2053-1591en
dc.identifier.doi10.1088/2053-1591/3/6/065007en
dc.identifier.urihttp://hdl.handle.net/10754/622354-
dc.description.abstractDirect magnetron sputtering of transition metal dichalcogenide targets is proposed as a new approach for depositing large-area two-dimensional layered materials. Bilayer to few-layer MoS2 deposited by magnetron sputtering followed by post-deposition annealing shows superior area scalability over 20 cm(2) and layer-by-layer controllability. High crystallinity of layered MoS2 was confirmed by Raman, photo-luminescence, and transmission electron microscopy analysis. The sputtering temperature and annealing ambience were found to play an important role in the film quality. The top-gate field-effect transistor by using the layered MoS2 channel shows typical n-type characteristics with a current on/off ratio of approximately 10(4). The relatively low mobility is attributed to the small grain size of 0.1-1 mu m with a trap charge density in grain boundaries of the order of 10(13) cm(-2).en
dc.description.sponsorshipThis work was supported by Ministry of Science and Technology of Taiwan, Republic of China, under grant MOST103-2221-E-009-221-MY3 and 102-2119-M-001-005-MY3, and by NCTU-UCB I-RiCE program, under grant MOST104-2911-I-009-301. The authors are grateful to the Nano Facility Center at National Chiao Tung University and National Nano Device Laboratories, where the experiments in this paper were performed.en
dc.publisherIOP Publishingen
dc.relation.urlhttp://iopscience.iop.org/article/10.1088/2053-1591/3/6/065007en
dc.subjectMoS2en
dc.subjectsputteren
dc.subjecttransition metal dichalcogenideen
dc.titleLarge-area few-layer MoS 2 deposited by sputteringen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalMaterials Research Expressen
dc.contributor.institutionDepartment of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwanen
dc.contributor.institutionDepartment of Chemical and Materials Engineering, National Central University, Jhongli, Taiwanen
dc.contributor.institutionDepartment of Electrophysics, National Chiao Tung University, Hsinchu, Taiwanen
dc.contributor.institutionNational Nano Device Laboratories, Hsinchu, Taiwanen
dc.contributor.institutionDepartment of Physics, National Chung Hsing University, Taichung, Taiwanen
dc.contributor.institutionTaiwan Consortium of Emergent Crystalline Materials (TCECM), Ministry of Science and Technology, Taipei, Taiwanen
kaust.authorLi, Lain-Jongen
All Items in KAUST are protected by copyright, with all rights reserved, unless otherwise indicated.