Atomic Origins of Monoclinic-Tetragonal (Rutile) Phase Transition in Doped VO 2 Nanowires

Handle URI:
http://hdl.handle.net/10754/622350
Title:
Atomic Origins of Monoclinic-Tetragonal (Rutile) Phase Transition in Doped VO 2 Nanowires
Authors:
Asayesh-Ardakani, Hasti; Nie, Anmin; Marley, Peter M.; Zhu, Yihan; Phillips, Patrick J.; Singh, Sujay; Mashayek, Farzad; Sambandamurthy, Ganapathy; Low, Ke Bin; Klie, Robert F.; Banerjee, Sarbajit; Odegard, Gregory M.; Shahbazian-Yassar, Reza
Abstract:
There has been long-standing interest in tuning the metal-insulator phase transition in vanadium dioxide (VO) via the addition of chemical dopants. However, the underlying mechanisms by which doping elements regulate the phase transition in VO are poorly understood. Taking advantage of aberration-corrected scanning transmission electron microscopy, we reveal the atomistic origins by which tungsten (W) dopants influence the phase transition in single crystalline WVO nanowires. Our atomically resolved strain maps clearly show the localized strain normal to the (122¯) lattice planes of the low W-doped monoclinic structure (insulator). These strain maps demonstrate how anisotropic localized stress created by dopants in the monoclinic structure accelerates the phase transition and lead to relaxation of structure in tetragonal form. In contrast, the strain distribution in the high W-doped VO structure is relatively uniform as a result of transition to tetragonal (metallic) phase. The directional strain gradients are furthermore corroborated by density functional theory calculations that show the energetic consequences of distortions to the local structure. These findings pave the roadmap for lattice-stress engineering of the MIT behavior in strongly correlated materials for specific applications such as ultrafast electronic switches and electro-optical sensors.
KAUST Department:
Advanced Membranes and Porous Materials Research Center
Citation:
Asayesh-Ardakani H, Nie A, Marley PM, Zhu Y, Phillips PJ, et al. (2015) Atomic Origins of Monoclinic-Tetragonal (Rutile) Phase Transition in Doped VO2Nanowires. Nano Letters 15: 7179–7188. Available: http://dx.doi.org/10.1021/acs.nanolett.5b03219.
Publisher:
American Chemical Society (ACS)
Journal:
Nano Letters
Issue Date:
12-Oct-2015
DOI:
10.1021/acs.nanolett.5b03219
PubMed ID:
26457771
Type:
Article
ISSN:
1530-6984; 1530-6992
Sponsors:
R.S.Y. acknowledges financial support from the National Science Foundation (Award No. CMMI-1200383). The acquisition of the UIC JEOL JEM-ARM200CF is supported by an MRI-R2 grant from the National Science Foundation (Grant No. DMR-0959470). Support from the UIC Research Resources Center is also acknowledged. G.M.O. would like to acknowledge the use of SUPERIOR, a high-performance computing cluster at Michigan Technological University. P.M. and S.B. acknowledge support from the National Science Foundation under IIP 1311837 and from the Research Corporation for Science Advancement through a Cottrell Scholar Award. S.S. and G.S. are supported by National Science Foundation (DMR 0847324).
Appears in Collections:
Articles; Advanced Membranes and Porous Materials Research Center

Full metadata record

DC FieldValue Language
dc.contributor.authorAsayesh-Ardakani, Hastien
dc.contributor.authorNie, Anminen
dc.contributor.authorMarley, Peter M.en
dc.contributor.authorZhu, Yihanen
dc.contributor.authorPhillips, Patrick J.en
dc.contributor.authorSingh, Sujayen
dc.contributor.authorMashayek, Farzaden
dc.contributor.authorSambandamurthy, Ganapathyen
dc.contributor.authorLow, Ke Binen
dc.contributor.authorKlie, Robert F.en
dc.contributor.authorBanerjee, Sarbajiten
dc.contributor.authorOdegard, Gregory M.en
dc.contributor.authorShahbazian-Yassar, Rezaen
dc.date.accessioned2017-01-02T09:28:25Z-
dc.date.available2017-01-02T09:28:25Z-
dc.date.issued2015-10-12en
dc.identifier.citationAsayesh-Ardakani H, Nie A, Marley PM, Zhu Y, Phillips PJ, et al. (2015) Atomic Origins of Monoclinic-Tetragonal (Rutile) Phase Transition in Doped VO2Nanowires. Nano Letters 15: 7179–7188. Available: http://dx.doi.org/10.1021/acs.nanolett.5b03219.en
dc.identifier.issn1530-6984en
dc.identifier.issn1530-6992en
dc.identifier.pmid26457771en
dc.identifier.doi10.1021/acs.nanolett.5b03219en
dc.identifier.urihttp://hdl.handle.net/10754/622350-
dc.description.abstractThere has been long-standing interest in tuning the metal-insulator phase transition in vanadium dioxide (VO) via the addition of chemical dopants. However, the underlying mechanisms by which doping elements regulate the phase transition in VO are poorly understood. Taking advantage of aberration-corrected scanning transmission electron microscopy, we reveal the atomistic origins by which tungsten (W) dopants influence the phase transition in single crystalline WVO nanowires. Our atomically resolved strain maps clearly show the localized strain normal to the (122¯) lattice planes of the low W-doped monoclinic structure (insulator). These strain maps demonstrate how anisotropic localized stress created by dopants in the monoclinic structure accelerates the phase transition and lead to relaxation of structure in tetragonal form. In contrast, the strain distribution in the high W-doped VO structure is relatively uniform as a result of transition to tetragonal (metallic) phase. The directional strain gradients are furthermore corroborated by density functional theory calculations that show the energetic consequences of distortions to the local structure. These findings pave the roadmap for lattice-stress engineering of the MIT behavior in strongly correlated materials for specific applications such as ultrafast electronic switches and electro-optical sensors.en
dc.description.sponsorshipR.S.Y. acknowledges financial support from the National Science Foundation (Award No. CMMI-1200383). The acquisition of the UIC JEOL JEM-ARM200CF is supported by an MRI-R2 grant from the National Science Foundation (Grant No. DMR-0959470). Support from the UIC Research Resources Center is also acknowledged. G.M.O. would like to acknowledge the use of SUPERIOR, a high-performance computing cluster at Michigan Technological University. P.M. and S.B. acknowledge support from the National Science Foundation under IIP 1311837 and from the Research Corporation for Science Advancement through a Cottrell Scholar Award. S.S. and G.S. are supported by National Science Foundation (DMR 0847324).en
dc.publisherAmerican Chemical Society (ACS)en
dc.subjectdopingen
dc.subjectnanowiresen
dc.subjectphase transitionen
dc.subjectscanning transmission electron microscopyen
dc.subjectstrain mappingen
dc.subjectVO2en
dc.titleAtomic Origins of Monoclinic-Tetragonal (Rutile) Phase Transition in Doped VO 2 Nanowiresen
dc.typeArticleen
dc.contributor.departmentAdvanced Membranes and Porous Materials Research Centeren
dc.identifier.journalNano Lettersen
dc.contributor.institutionDepartment of Mechanical Engineering-Engineering Mechanics, Michigan Technological University, Houghtona, MI, 49933-1295, United Statesen
dc.contributor.institutionDepartment of Physics, University of Illinois at Chicago, Chicago, IL, 60607-7059, United Statesen
dc.contributor.institutionDepartment of Chemistry, University at Buffalo, State University of New York, Buffalo, NY, 14260-3000, United Statesen
dc.contributor.institutionDepartment of Physics, University at Buffalo, State University of New York, Buffalo, NY, 14260-3000, United Statesen
dc.contributor.institutionDepartment of Mechanical and Industrial Engineering, University of Illinois at Chicago, Chicagoa, IL, 60607-7059, United Statesen
dc.contributor.institutionResearch Resource Center, University of Illinois at Chicago, Chicago, IL, 60607-7059, United Statesen
kaust.authorZhu, Yihanen

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