Concurrent improvement in optical and electrical characteristics by using inverted pyramidal array structures toward efficient Si heterojunction solar cells

Handle URI:
http://hdl.handle.net/10754/622282
Title:
Concurrent improvement in optical and electrical characteristics by using inverted pyramidal array structures toward efficient Si heterojunction solar cells
Authors:
Wang, Hsin Ping; Li, An Cheng; Lin, Tzu Yin; He, Jr-Hau ( 0000-0003-1886-9241 )
Abstract:
The Si heterojunction (SHJ) solar cell is presently the most popular design in the crystalline Si (c-Si) photovoltaics due to the high open-circuit voltages (V). Photon management by surface structuring techniques to control the light entering the devices is critical for boosting cell efficiency although it usually comes with the V loss caused by severe surface recombination. For the first time, the periodic inverted pyramid (IP) structure fabricated by photolithography and anisotropic etching processes was employed for SHJ solar cells, demonstrating concurrent improvement in optical and electrical characteristics (i.e., short-circuit current density (J) and V). Periodic IP structures show superior light-harvesting properties as most of the incident rays bounce three times on the walls of the IPs but only twice between conventional random upright pyramids (UPs). The high minority carrier lifetime of the IP structures after a-Si:H passivation results in an enhanced V by 28 mV, showing improved carrier collection efficiency due to the superior passivation of the IP structure over the random UP structures. The superior antireflective (AR) ability and passivation results demonstrate that the IP structure has the potential to replace conventional UP structures to further boost the efficiency in solar cell applications.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Citation:
Wang H-P, Li A-C, Lin T-Y, He J-H (2016) Concurrent improvement in optical and electrical characteristics by using inverted pyramidal array structures toward efficient Si heterojunction solar cells. Nano Energy 23: 1–6. Available: http://dx.doi.org/10.1016/j.nanoen.2016.02.034.
Publisher:
Elsevier BV
Journal:
Nano Energy
Issue Date:
2-Mar-2016
DOI:
10.1016/j.nanoen.2016.02.034
Type:
Article
ISSN:
2211-2855
Additional Links:
http://www.sciencedirect.com/science/article/pii/S2211285516000859
Appears in Collections:
Articles; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorWang, Hsin Pingen
dc.contributor.authorLi, An Chengen
dc.contributor.authorLin, Tzu Yinen
dc.contributor.authorHe, Jr-Hauen
dc.date.accessioned2017-01-02T09:08:23Z-
dc.date.available2017-01-02T09:08:23Z-
dc.date.issued2016-03-02en
dc.identifier.citationWang H-P, Li A-C, Lin T-Y, He J-H (2016) Concurrent improvement in optical and electrical characteristics by using inverted pyramidal array structures toward efficient Si heterojunction solar cells. Nano Energy 23: 1–6. Available: http://dx.doi.org/10.1016/j.nanoen.2016.02.034.en
dc.identifier.issn2211-2855en
dc.identifier.doi10.1016/j.nanoen.2016.02.034en
dc.identifier.urihttp://hdl.handle.net/10754/622282-
dc.description.abstractThe Si heterojunction (SHJ) solar cell is presently the most popular design in the crystalline Si (c-Si) photovoltaics due to the high open-circuit voltages (V). Photon management by surface structuring techniques to control the light entering the devices is critical for boosting cell efficiency although it usually comes with the V loss caused by severe surface recombination. For the first time, the periodic inverted pyramid (IP) structure fabricated by photolithography and anisotropic etching processes was employed for SHJ solar cells, demonstrating concurrent improvement in optical and electrical characteristics (i.e., short-circuit current density (J) and V). Periodic IP structures show superior light-harvesting properties as most of the incident rays bounce three times on the walls of the IPs but only twice between conventional random upright pyramids (UPs). The high minority carrier lifetime of the IP structures after a-Si:H passivation results in an enhanced V by 28 mV, showing improved carrier collection efficiency due to the superior passivation of the IP structure over the random UP structures. The superior antireflective (AR) ability and passivation results demonstrate that the IP structure has the potential to replace conventional UP structures to further boost the efficiency in solar cell applications.en
dc.publisherElsevier BVen
dc.relation.urlhttp://www.sciencedirect.com/science/article/pii/S2211285516000859en
dc.subjectHeterojunctionen
dc.subjectInverted pyramiden
dc.subjectPhoton managementen
dc.subjectSolar cellsen
dc.titleConcurrent improvement in optical and electrical characteristics by using inverted pyramidal array structures toward efficient Si heterojunction solar cellsen
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.identifier.journalNano Energyen
kaust.authorWang, Hsin Pingen
kaust.authorLi, An Chengen
kaust.authorLin, Tzu Yinen
kaust.authorHe, Jr-Hauen
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