III-N Wide Bandgap Deep-Ultraviolet Lasers and Photodetectors

Handle URI:
http://hdl.handle.net/10754/622206
Title:
III-N Wide Bandgap Deep-Ultraviolet Lasers and Photodetectors
Authors:
Detchprohm, T.; Li, Xiaohang ( 0000-0002-4434-365X ) ; Shen, S.-C.; Yoder, P.D.; Dupuis, R.D.
Abstract:
The III-N wide-bandgap alloys in the AlInGaN system have many important and unique electrical and optical properties which have been exploited to develop deep-ultraviolet (DUV) optical devices operating at wavelengths < 300 nm, including light-emitting diodes, optically pumped lasers, and photodetectors. In this chapter, we review some aspects of the development and current state of the art of these DUV materials and devices. We describe the growth of III-N materials in the UV region by metalorganic chemical vapor deposition as well as the properties of epitaxial layers and heterostructure devices. In addition, we discuss the simulation and design of DUV laser diodes, the processing of III-N optical devices, and the description of the current state of the art of DUV lasers and photodetectors.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Electrical Engineering Program
Citation:
Detchprohm T, Li X, Shen S-C, Yoder PD, Dupuis RD (2016) III-N Wide Bandgap Deep-Ultraviolet Lasers and Photodetectors. Semiconductors and Semimetals. Available: http://dx.doi.org/10.1016/bs.semsem.2016.09.001.
Publisher:
Elsevier BV
Journal:
Semiconductors and Semimetals
Issue Date:
5-Nov-2016
DOI:
10.1016/bs.semsem.2016.09.001
Type:
Book Chapter
ISSN:
0080-8784
Sponsors:
The work at Georgia Institute of Technology was supported over several years in part by DARPA, NSF, and the US Army Research Office. We thank the School of ECE and the College of Engineering at Georgia Institute of Technology for additional support, and RDD acknowledges the continued support of the Steve W. Chaddick Endowed Chair in Electro-Optics and the Georgia Research Alliance.
Additional Links:
http://www.sciencedirect.com/science/article/pii/S008087841630028X
Appears in Collections:
Electrical Engineering Program; Book Chapters; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorDetchprohm, T.en
dc.contributor.authorLi, Xiaohangen
dc.contributor.authorShen, S.-C.en
dc.contributor.authorYoder, P.D.en
dc.contributor.authorDupuis, R.D.en
dc.date.accessioned2017-01-02T08:42:37Z-
dc.date.available2017-01-02T08:42:37Z-
dc.date.issued2016-11-05en
dc.identifier.citationDetchprohm T, Li X, Shen S-C, Yoder PD, Dupuis RD (2016) III-N Wide Bandgap Deep-Ultraviolet Lasers and Photodetectors. Semiconductors and Semimetals. Available: http://dx.doi.org/10.1016/bs.semsem.2016.09.001.en
dc.identifier.issn0080-8784en
dc.identifier.doi10.1016/bs.semsem.2016.09.001en
dc.identifier.urihttp://hdl.handle.net/10754/622206-
dc.description.abstractThe III-N wide-bandgap alloys in the AlInGaN system have many important and unique electrical and optical properties which have been exploited to develop deep-ultraviolet (DUV) optical devices operating at wavelengths < 300 nm, including light-emitting diodes, optically pumped lasers, and photodetectors. In this chapter, we review some aspects of the development and current state of the art of these DUV materials and devices. We describe the growth of III-N materials in the UV region by metalorganic chemical vapor deposition as well as the properties of epitaxial layers and heterostructure devices. In addition, we discuss the simulation and design of DUV laser diodes, the processing of III-N optical devices, and the description of the current state of the art of DUV lasers and photodetectors.en
dc.description.sponsorshipThe work at Georgia Institute of Technology was supported over several years in part by DARPA, NSF, and the US Army Research Office. We thank the School of ECE and the College of Engineering at Georgia Institute of Technology for additional support, and RDD acknowledges the continued support of the Steve W. Chaddick Endowed Chair in Electro-Optics and the Georgia Research Alliance.en
dc.publisherElsevier BVen
dc.relation.urlhttp://www.sciencedirect.com/science/article/pii/S008087841630028Xen
dc.subjectMetalorganic chemical vapor depositionen
dc.subjectIII-Nen
dc.subjectAlGaNen
dc.subjectAlNen
dc.subjectUltraviolet emittersen
dc.subjectUltraviolet photodetectorsen
dc.subjectDeep ultravioleten
dc.subjectDeep-ultraviolet devicesen
dc.titleIII-N Wide Bandgap Deep-Ultraviolet Lasers and Photodetectorsen
dc.typeBook Chapteren
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentElectrical Engineering Programen
dc.identifier.journalSemiconductors and Semimetalsen
dc.contributor.institutionCenter for Compound Semiconductors, School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, United Statesen
kaust.authorLi, Xiaohangen
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