Atomic-Monolayer MoS2 Band-to-Band Tunneling Field-Effect Transistor

Handle URI:
http://hdl.handle.net/10754/622134
Title:
Atomic-Monolayer MoS2 Band-to-Band Tunneling Field-Effect Transistor
Authors:
Lan, Yann Wen; Torres, Carlos M.; Tsai, Shin Hung; Zhu, Xiaodan; Shi, Yumeng; Li, Ming-yang; Li, Lain-Jong ( 0000-0002-4059-7783 ) ; Yeh, Wen Kuan; Wang, Kang L.
Abstract:
The experimental observation of band-to-band tunneling in novel tunneling field-effect transistors utilizing a monolayer of MoS2 as the conducting channel is demonstrated. Our results indicate that the strong gate-coupling efficiency enabled by two-dimensional materials, such as monolayer MoS2, results in the direct manifestation of a band-to-band tunneling current and an ambipolar transport.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Lan Y-W, Torres CM, Tsai S-H, Zhu X, Shi Y, et al. (2016) Atomic-Monolayer MoS2 Band-to-Band Tunneling Field-Effect Transistor. Small 12: 5676–5683. Available: http://dx.doi.org/10.1002/smll.201601310.
Publisher:
Wiley-Blackwell
Journal:
Small
Issue Date:
5-Sep-2016
DOI:
10.1002/smll.201601310
Type:
Article
ISSN:
1613-6810
Sponsors:
Y.-W.L. and C.M.T. contributed equally to this work. This work was in part supported by the National Science Foundation (NSF) under Award No. NSF-EFRI-1433541. C.M.T.Jr. thanks the Department of Defense SMART (Science, Mathematics, and Research for Transformation) Scholarship for graduate scholarship funding. This research was funded in part by the National Science Council of Taiwan under Contract No. NSC 103-2917-I-564-017. The authors would like to acknowledge the collaboration of this research with King Abdul-Aziz City for Science and Technology (KACST) via The Center of Excellence for Green Nanotechnologies (CEGN). K.L.W., Y.-W.L., and C.M.T.Jr. conceived the idea and designed the experiments; Y.-W.L. and C.M.T.Jr. performed the electrical measurements; L.-J.L., M.Y.L., and Y.S. synthesized and contributed the materials; C.M.T.Jr. fabricated the devices; Y.-W.L., X. Z., W.-K.Y. and S.-H.T. analyzed the data. All of the authors discussed the results and wrote the paper together.
Additional Links:
http://onlinelibrary.wiley.com/doi/10.1002/smll.201601310/full
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorLan, Yann Wenen
dc.contributor.authorTorres, Carlos M.en
dc.contributor.authorTsai, Shin Hungen
dc.contributor.authorZhu, Xiaodanen
dc.contributor.authorShi, Yumengen
dc.contributor.authorLi, Ming-yangen
dc.contributor.authorLi, Lain-Jongen
dc.contributor.authorYeh, Wen Kuanen
dc.contributor.authorWang, Kang L.en
dc.date.accessioned2017-01-02T08:10:20Z-
dc.date.available2017-01-02T08:10:20Z-
dc.date.issued2016-09-05en
dc.identifier.citationLan Y-W, Torres CM, Tsai S-H, Zhu X, Shi Y, et al. (2016) Atomic-Monolayer MoS2 Band-to-Band Tunneling Field-Effect Transistor. Small 12: 5676–5683. Available: http://dx.doi.org/10.1002/smll.201601310.en
dc.identifier.issn1613-6810en
dc.identifier.doi10.1002/smll.201601310en
dc.identifier.urihttp://hdl.handle.net/10754/622134-
dc.description.abstractThe experimental observation of band-to-band tunneling in novel tunneling field-effect transistors utilizing a monolayer of MoS2 as the conducting channel is demonstrated. Our results indicate that the strong gate-coupling efficiency enabled by two-dimensional materials, such as monolayer MoS2, results in the direct manifestation of a band-to-band tunneling current and an ambipolar transport.en
dc.description.sponsorshipY.-W.L. and C.M.T. contributed equally to this work. This work was in part supported by the National Science Foundation (NSF) under Award No. NSF-EFRI-1433541. C.M.T.Jr. thanks the Department of Defense SMART (Science, Mathematics, and Research for Transformation) Scholarship for graduate scholarship funding. This research was funded in part by the National Science Council of Taiwan under Contract No. NSC 103-2917-I-564-017. The authors would like to acknowledge the collaboration of this research with King Abdul-Aziz City for Science and Technology (KACST) via The Center of Excellence for Green Nanotechnologies (CEGN). K.L.W., Y.-W.L., and C.M.T.Jr. conceived the idea and designed the experiments; Y.-W.L. and C.M.T.Jr. performed the electrical measurements; L.-J.L., M.Y.L., and Y.S. synthesized and contributed the materials; C.M.T.Jr. fabricated the devices; Y.-W.L., X. Z., W.-K.Y. and S.-H.T. analyzed the data. All of the authors discussed the results and wrote the paper together.en
dc.publisherWiley-Blackwellen
dc.relation.urlhttp://onlinelibrary.wiley.com/doi/10.1002/smll.201601310/fullen
dc.subject2D materialsen
dc.subjectBand-to-band tunnelingen
dc.subjectMoS2en
dc.subjectTransition metal dichalcogenidesen
dc.subjectTunneling field effect transistorsen
dc.titleAtomic-Monolayer MoS2 Band-to-Band Tunneling Field-Effect Transistoren
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalSmallen
dc.contributor.institutionNational Nano Device Laboratories (NDL) National Applied Research Laboratories Hsinchu 30078 Taiwanen
dc.contributor.institutionDepartment of Electrical Engineering University of California at Los Angeles Los Angeles 90095CA USAen
dc.contributor.institutionSpace and Naval Warfare (SPAWAR) Systems Center Pacific, San Diego, CA 92152, USAen
dc.contributor.institutionResearch Center for Applied Sciences Academia Sinica Taipei 10617 Taiwanen
dc.contributor.institutionDepartment of Electrical Engineering National University of Kaohsiung Kaohsiung 811 Taiwanen
kaust.authorShi, Yumengen
kaust.authorLi, Ming-yangen
kaust.authorLi, Lain-Jongen
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