Highly Efficient Perovskite-Quantum-Dot Light-Emitting Diodes by Surface Engineering

Handle URI:
http://hdl.handle.net/10754/622107
Title:
Highly Efficient Perovskite-Quantum-Dot Light-Emitting Diodes by Surface Engineering
Authors:
Pan, Jun; Quan, Li Na; Zhao, Yongbiao; Peng, Wei ( 0000-0002-7168-9795 ) ; Banavoth, Murali ( 0000-0002-7806-2274 ) ; Sarmah, Smritakshi P.; Yuan, Mingjian; Sinatra, Lutfan ( 0000-0001-7034-7745 ) ; AlYami, Noktan; Liu, Jiakai; Yassitepe, Emre; Yang, Zhenyu; Voznyy, Oleksandr; Comin, Riccardo; Hedhili, Mohamed N. ( 0000-0002-3624-036X ) ; Mohammed, Omar F. ( 0000-0001-8500-1130 ) ; Lu, Zheng Hong; Kim, Dong Ha; Sargent, Edward H.; Bakr, Osman M. ( 0000-0002-3428-1002 )
Abstract:
A two-step ligand-exchange strategy is developed, in which the long-carbon-chain ligands on all-inorganic perovskite (CsPbX3, X = Br, Cl) quantum dots (QDs) are replaced with halide-ion-pair ligands. Green and blue light-emitting diodes made from the halide-ion-paircapped quantum dots exhibit high external quantum efficiencies compared with the untreated QDs.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Imaging and Characterization Core Lab
Citation:
Pan J, Quan LN, Zhao Y, Peng W, Murali B, et al. (2016) Highly Efficient Perovskite-Quantum-Dot Light-Emitting Diodes by Surface Engineering. Advanced Materials 28: 8718–8725. Available: http://dx.doi.org/10.1002/adma.201600784.
Publisher:
Wiley-Blackwell
Journal:
Advanced Materials
KAUST Grant Number:
KUS-11-009-21; URF/1/2268-01-01
Issue Date:
16-Aug-2016
DOI:
10.1002/adma.201600784
Type:
Article
ISSN:
0935-9648
Sponsors:
J.P., L.N.Q., and Y.Z. contributed equally to this work. This publication is based in part on Awards KUS-11-009-21 and URF/1/2268-01-01 made by King Abdullah University of Science and Technology (KAUST), by the Ontario Research Fund Research Excellence Program, and by the Natural Sciences and Engineering Research Council (NSERC) of Canada. L. N. Quan and D. H. Kim acknowledge the financial support by the National Research Foundation of Korea Grant funded by the Korean Government (Grant No. 2014R1A2A1A09005656). The authors acknowledge Mrs. Nini Wei and Dr. Jun Li for TEM cross-sections.
Additional Links:
http://onlinelibrary.wiley.com/doi/10.1002/adma.201600784/abstract
Appears in Collections:
Articles; Advanced Nanofabrication, Imaging and Characterization Core Lab; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorPan, Junen
dc.contributor.authorQuan, Li Naen
dc.contributor.authorZhao, Yongbiaoen
dc.contributor.authorPeng, Weien
dc.contributor.authorBanavoth, Muralien
dc.contributor.authorSarmah, Smritakshi P.en
dc.contributor.authorYuan, Mingjianen
dc.contributor.authorSinatra, Lutfanen
dc.contributor.authorAlYami, Noktanen
dc.contributor.authorLiu, Jiakaien
dc.contributor.authorYassitepe, Emreen
dc.contributor.authorYang, Zhenyuen
dc.contributor.authorVoznyy, Oleksandren
dc.contributor.authorComin, Riccardoen
dc.contributor.authorHedhili, Mohamed N.en
dc.contributor.authorMohammed, Omar F.en
dc.contributor.authorLu, Zheng Hongen
dc.contributor.authorKim, Dong Haen
dc.contributor.authorSargent, Edward H.en
dc.contributor.authorBakr, Osman M.en
dc.date.accessioned2017-01-01T13:18:23Z-
dc.date.available2017-01-01T13:18:23Z-
dc.date.issued2016-08-16en
dc.identifier.citationPan J, Quan LN, Zhao Y, Peng W, Murali B, et al. (2016) Highly Efficient Perovskite-Quantum-Dot Light-Emitting Diodes by Surface Engineering. Advanced Materials 28: 8718–8725. Available: http://dx.doi.org/10.1002/adma.201600784.en
dc.identifier.issn0935-9648en
dc.identifier.doi10.1002/adma.201600784en
dc.identifier.urihttp://hdl.handle.net/10754/622107-
dc.description.abstractA two-step ligand-exchange strategy is developed, in which the long-carbon-chain ligands on all-inorganic perovskite (CsPbX3, X = Br, Cl) quantum dots (QDs) are replaced with halide-ion-pair ligands. Green and blue light-emitting diodes made from the halide-ion-paircapped quantum dots exhibit high external quantum efficiencies compared with the untreated QDs.en
dc.description.sponsorshipJ.P., L.N.Q., and Y.Z. contributed equally to this work. This publication is based in part on Awards KUS-11-009-21 and URF/1/2268-01-01 made by King Abdullah University of Science and Technology (KAUST), by the Ontario Research Fund Research Excellence Program, and by the Natural Sciences and Engineering Research Council (NSERC) of Canada. L. N. Quan and D. H. Kim acknowledge the financial support by the National Research Foundation of Korea Grant funded by the Korean Government (Grant No. 2014R1A2A1A09005656). The authors acknowledge Mrs. Nini Wei and Dr. Jun Li for TEM cross-sections.en
dc.publisherWiley-Blackwellen
dc.relation.urlhttp://onlinelibrary.wiley.com/doi/10.1002/adma.201600784/abstracten
dc.subjectCsPbBr3en
dc.subjectexternal quantum efficiencyen
dc.subjectlight-emitting diodesen
dc.subjectperovskiteen
dc.subjectquantum dotsen
dc.titleHighly Efficient Perovskite-Quantum-Dot Light-Emitting Diodes by Surface Engineeringen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentImaging and Characterization Core Laben
dc.identifier.journalAdvanced Materialsen
dc.contributor.institutionDepartment of Electrical and Computer Engineering; University of Toronto; 10 King's College Road Toronto Ontario M5S 3G4 Canadaen
dc.contributor.institutionDepartment of Chemistry and Nano Science; Ewha Woman's University; 52, Ewhayeodae-gil Seodaemun-gu Seoul 03760 Koreaen
dc.contributor.institutionDepartment of Materials Science and Engineering; University of Toronto; 184 College Street Toronto Ontario M5S 3E4 Canadaen
kaust.authorPan, Junen
kaust.authorPeng, Weien
kaust.authorBanavoth, Muralien
kaust.authorSarmah, Smritakshi P.en
kaust.authorSinatra, Lutfanen
kaust.authorAlYami, Noktanen
kaust.authorLiu, Jiakaien
kaust.authorHedhili, Mohamed N.en
kaust.authorMohammed, Omar F.en
kaust.authorBakr, Osman M.en
kaust.grant.numberKUS-11-009-21en
kaust.grant.numberURF/1/2268-01-01en
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