Band Alignment of 2D Transition Metal Dichalcogenide Heterojunctions

Handle URI:
http://hdl.handle.net/10754/622103
Title:
Band Alignment of 2D Transition Metal Dichalcogenide Heterojunctions
Authors:
Chiu, Ming-Hui; Tseng, Wei Hsuan; Tang, Hao-Ling; Chang, Yung Huang; Chen, Chang Hsiao; Hsu, Wei Ting; Chang, Wen Hao; Wu, Chih I.; Li, Lain-Jong ( 0000-0002-4059-7783 )
Abstract:
It is critically important to characterize the band alignment in semiconductor heterojunctions (HJs) because it controls the electronic and optical properties. However, the well-known Anderson's model usually fails to predict the band alignment in bulk HJ systems due to the presence of charge transfer at the interfacial bonding. Atomically thin 2D transition metal dichalcogenide materials have attracted much attention recently since the ultrathin HJs and devices can be easily built and they are promising for future electronics. The vertical HJs based on 2D materials can be constructed via van der Waals stacking regardless of the lattice mismatch between two materials. Despite the defect-free characteristics of the junction interface, experimental evidence is still lacking on whether the simple Anderson rule can predict the band alignment of HJs. Here, the validity of Anderson's model is verified for the 2D heterojunction systems and the success of Anderson's model is attributed to the absence of dangling bonds (i.e., interface dipoles) at the van der Waal interface. The results from the work set a foundation allowing the use of powerful Anderson's rule to determine the band alignments of 2D HJs, which is beneficial to future electronic, photonic, and optoelectronic devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Chiu M-H, Tseng W-H, Tang H-L, Chang Y-H, Chen C-H, et al. (2016) Band Alignment of 2D Transition Metal Dichalcogenide Heterojunctions. Advanced Functional Materials. Available: http://dx.doi.org/10.1002/adfm.201603756.
Publisher:
Wiley-Blackwell
Journal:
Advanced Functional Materials
Issue Date:
20-Sep-2016
DOI:
10.1002/adfm.201603756
Type:
Article
ISSN:
1616-301X
Sponsors:
L.-J.L. thanks the support from KAUST, Academia Sinica, Ministry of Science and Technology (MOST) and Taiwan Consortium of Emergent Crystalline Materials (TCECM) under Grant: NSC102-2119-M-009-002-MY3.
Additional Links:
http://onlinelibrary.wiley.com/doi/10.1002/adfm.201603756/full
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorChiu, Ming-Huien
dc.contributor.authorTseng, Wei Hsuanen
dc.contributor.authorTang, Hao-Lingen
dc.contributor.authorChang, Yung Huangen
dc.contributor.authorChen, Chang Hsiaoen
dc.contributor.authorHsu, Wei Tingen
dc.contributor.authorChang, Wen Haoen
dc.contributor.authorWu, Chih I.en
dc.contributor.authorLi, Lain-Jongen
dc.date.accessioned2017-01-01T13:18:22Z-
dc.date.available2017-01-01T13:18:22Z-
dc.date.issued2016-09-20en
dc.identifier.citationChiu M-H, Tseng W-H, Tang H-L, Chang Y-H, Chen C-H, et al. (2016) Band Alignment of 2D Transition Metal Dichalcogenide Heterojunctions. Advanced Functional Materials. Available: http://dx.doi.org/10.1002/adfm.201603756.en
dc.identifier.issn1616-301Xen
dc.identifier.doi10.1002/adfm.201603756en
dc.identifier.urihttp://hdl.handle.net/10754/622103-
dc.description.abstractIt is critically important to characterize the band alignment in semiconductor heterojunctions (HJs) because it controls the electronic and optical properties. However, the well-known Anderson's model usually fails to predict the band alignment in bulk HJ systems due to the presence of charge transfer at the interfacial bonding. Atomically thin 2D transition metal dichalcogenide materials have attracted much attention recently since the ultrathin HJs and devices can be easily built and they are promising for future electronics. The vertical HJs based on 2D materials can be constructed via van der Waals stacking regardless of the lattice mismatch between two materials. Despite the defect-free characteristics of the junction interface, experimental evidence is still lacking on whether the simple Anderson rule can predict the band alignment of HJs. Here, the validity of Anderson's model is verified for the 2D heterojunction systems and the success of Anderson's model is attributed to the absence of dangling bonds (i.e., interface dipoles) at the van der Waal interface. The results from the work set a foundation allowing the use of powerful Anderson's rule to determine the band alignments of 2D HJs, which is beneficial to future electronic, photonic, and optoelectronic devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.en
dc.description.sponsorshipL.-J.L. thanks the support from KAUST, Academia Sinica, Ministry of Science and Technology (MOST) and Taiwan Consortium of Emergent Crystalline Materials (TCECM) under Grant: NSC102-2119-M-009-002-MY3.en
dc.publisherWiley-Blackwellen
dc.relation.urlhttp://onlinelibrary.wiley.com/doi/10.1002/adfm.201603756/fullen
dc.subject2D materialsen
dc.subjectAnderson's ruleen
dc.subjectElectron affinity ruleen
dc.subjectHeterojunctionsen
dc.subjectTransition metal dichalcogonidesen
dc.titleBand Alignment of 2D Transition Metal Dichalcogenide Heterojunctionsen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalAdvanced Functional Materialsen
dc.contributor.institutionDepartment of Electrical Engineering National Taiwan University Taipei 10617 Taiwanen
dc.contributor.institutionDepartment of Electrophysics National Chiao Tung University Hsinchu 300 Taiwanen
dc.contributor.institutionDepartment of Automatic Control Engineering Feng Chia University Taichung 40724 Taiwanen
kaust.authorChiu, Ming-Huien
kaust.authorTang, Hao-Lingen
kaust.authorLi, Lain-Jongen
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