Contact resistance and stability study for Au, Ti, Hf and Ni contacts on thin-film Mg2Si

Handle URI:
http://hdl.handle.net/10754/622082
Title:
Contact resistance and stability study for Au, Ti, Hf and Ni contacts on thin-film Mg2Si
Authors:
Zhang, Bo; Zheng, Tao; Wang, Qingxiao; Zhu, Yihan; Alshareef, Husam N. ( 0000-0001-5029-2142 ) ; Kim, Moon J.; Gnade, Bruce E.
Abstract:
We present a detailed study of post-deposition annealing effects on contact resistance of Au, Ti, Hf and Ni electrodes on Mg2Si thin films. Thin-film Mg2Si and metal contacts were deposited using magnetron sputtering. Various post-annealing temperatures were studied to determine the thermal stability of each contact metal. The specific contact resistivity (SCR) was determined using the Cross Bridge Kelvin Resistor (CBKR) method. Ni contacts exhibits the best thermal stability, maintaining stability up to 400 °C, with a SCR of approximately 10−2 Ω-cm2 after annealing. The increased SCR after high temperature annealing is correlated with the formation of a Mg-Si-Ni mixture identified by cross-sectional scanning transmission electron microscopy (STEM) characterization, X-ray diffraction characterization (XRD) and other elemental analyses. The formation of this Mg-Si-Ni mixture is attributed to Ni diffusion and its reaction with the Mg2Si film.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Zhang B, Zheng T, Wang Q, Zhu Y, Alshareef HN, et al. (2016) Contact resistance and stability study for Au, Ti, Hf and Ni contacts on thin-film Mg2Si. Journal of Alloys and Compounds. Available: http://dx.doi.org/10.1016/j.jallcom.2016.12.229.
Publisher:
Elsevier BV
Journal:
Journal of Alloys and Compounds
Issue Date:
28-Dec-2016
DOI:
10.1016/j.jallcom.2016.12.229
Type:
Article
ISSN:
0925-8388
Sponsors:
This work is partially supported by the II-VI foundation. The authors would like to thank Wallace Martin, Gordon Pollack and John Maynard from the University of Texas at Dallas cleanroom.
Additional Links:
http://www.sciencedirect.com/science/article/pii/S0925838816341457
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorZhang, Boen
dc.contributor.authorZheng, Taoen
dc.contributor.authorWang, Qingxiaoen
dc.contributor.authorZhu, Yihanen
dc.contributor.authorAlshareef, Husam N.en
dc.contributor.authorKim, Moon J.en
dc.contributor.authorGnade, Bruce E.en
dc.date.accessioned2016-12-29T13:20:20Z-
dc.date.available2016-12-29T13:20:20Z-
dc.date.issued2016-12-28en
dc.identifier.citationZhang B, Zheng T, Wang Q, Zhu Y, Alshareef HN, et al. (2016) Contact resistance and stability study for Au, Ti, Hf and Ni contacts on thin-film Mg2Si. Journal of Alloys and Compounds. Available: http://dx.doi.org/10.1016/j.jallcom.2016.12.229.en
dc.identifier.issn0925-8388en
dc.identifier.doi10.1016/j.jallcom.2016.12.229en
dc.identifier.urihttp://hdl.handle.net/10754/622082-
dc.description.abstractWe present a detailed study of post-deposition annealing effects on contact resistance of Au, Ti, Hf and Ni electrodes on Mg2Si thin films. Thin-film Mg2Si and metal contacts were deposited using magnetron sputtering. Various post-annealing temperatures were studied to determine the thermal stability of each contact metal. The specific contact resistivity (SCR) was determined using the Cross Bridge Kelvin Resistor (CBKR) method. Ni contacts exhibits the best thermal stability, maintaining stability up to 400 °C, with a SCR of approximately 10−2 Ω-cm2 after annealing. The increased SCR after high temperature annealing is correlated with the formation of a Mg-Si-Ni mixture identified by cross-sectional scanning transmission electron microscopy (STEM) characterization, X-ray diffraction characterization (XRD) and other elemental analyses. The formation of this Mg-Si-Ni mixture is attributed to Ni diffusion and its reaction with the Mg2Si film.en
dc.description.sponsorshipThis work is partially supported by the II-VI foundation. The authors would like to thank Wallace Martin, Gordon Pollack and John Maynard from the University of Texas at Dallas cleanroom.en
dc.publisherElsevier BVen
dc.relation.urlhttp://www.sciencedirect.com/science/article/pii/S0925838816341457en
dc.rightsNOTICE: this is the author’s version of a work that was accepted for publication in Journal of Alloys and Compounds. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Journal of Alloys and Compounds, 28 December 2016. DOI: 10.1016/j.jallcom.2016.12.229en
dc.subjectThermoelectricen
dc.subjectThin-film Mg2Sien
dc.subjectSpecific contact resistivity (SCR)en
dc.subjectCross bridge kelvin resistor (CBKR) methoden
dc.subjectNi diffusionen
dc.subjectStabilityen
dc.titleContact resistance and stability study for Au, Ti, Hf and Ni contacts on thin-film Mg2Sien
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalJournal of Alloys and Compoundsen
dc.eprint.versionPost-printen
dc.contributor.institutionDepartment of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX 75080, United Statesen
kaust.authorZhu, Yihanen
kaust.authorAlshareef, Husam N.en
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