Proximity-induced spin-valley polarization in silicene or germanene on F-doped WS2

Handle URI:
http://hdl.handle.net/10754/622074
Title:
Proximity-induced spin-valley polarization in silicene or germanene on F-doped WS2
Authors:
Sattar, Shahid; Singh, Nirpendra ( 0000-0001-8043-0403 ) ; Schwingenschlögl, Udo ( 0000-0003-4179-7231 )
Abstract:
Silicene and germanene are key materials for the field of valleytronics. However, interaction with the substrate, which is necessary to support the electronically active medium, becomes a major obstacle. In the present work, we propose a substrate (F-doped WS2) that avoids detrimental effects and at the same time induces the required valley polarization, so that no further steps are needed for this purpose. The behavior is explained by proximity effects on silicene or germanene, as demonstrated by first-principles calculations. Broken inversion symmetry due to the presence of WS2 opens a substantial band gap in silicene or germanene. F doping of WS2 results in spin polarization, which, in conjunction with proximity-enhanced spin-orbit coupling, creates sizable spin-valley polarization.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Sattar S, Singh N, Schwingenschlögl U (2016) Proximity-induced spin-valley polarization in silicene or germanene on F-doped WS2. Physical Review B 94. Available: http://dx.doi.org/10.1103/PhysRevB.94.205415.
Publisher:
American Physical Society (APS)
Journal:
Physical Review B
Issue Date:
11-Nov-2016
DOI:
10.1103/PhysRevB.94.205415
Type:
Article
ISSN:
2469-9950; 2469-9969
Sponsors:
The research reported in this publication was supported by funding from King Abdullah University of Science and Technology (KAUST).
Additional Links:
http://journals.aps.org/prb/abstract/10.1103/PhysRevB.94.205415
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorSattar, Shahiden
dc.contributor.authorSingh, Nirpendraen
dc.contributor.authorSchwingenschlögl, Udoen
dc.date.accessioned2016-12-26T13:42:26Z-
dc.date.available2016-12-26T13:42:26Z-
dc.date.issued2016-11-11en
dc.identifier.citationSattar S, Singh N, Schwingenschlögl U (2016) Proximity-induced spin-valley polarization in silicene or germanene on F-doped WS2. Physical Review B 94. Available: http://dx.doi.org/10.1103/PhysRevB.94.205415.en
dc.identifier.issn2469-9950en
dc.identifier.issn2469-9969en
dc.identifier.doi10.1103/PhysRevB.94.205415en
dc.identifier.urihttp://hdl.handle.net/10754/622074-
dc.description.abstractSilicene and germanene are key materials for the field of valleytronics. However, interaction with the substrate, which is necessary to support the electronically active medium, becomes a major obstacle. In the present work, we propose a substrate (F-doped WS2) that avoids detrimental effects and at the same time induces the required valley polarization, so that no further steps are needed for this purpose. The behavior is explained by proximity effects on silicene or germanene, as demonstrated by first-principles calculations. Broken inversion symmetry due to the presence of WS2 opens a substantial band gap in silicene or germanene. F doping of WS2 results in spin polarization, which, in conjunction with proximity-enhanced spin-orbit coupling, creates sizable spin-valley polarization.en
dc.description.sponsorshipThe research reported in this publication was supported by funding from King Abdullah University of Science and Technology (KAUST).en
dc.publisherAmerican Physical Society (APS)en
dc.relation.urlhttp://journals.aps.org/prb/abstract/10.1103/PhysRevB.94.205415en
dc.rightsArchived with thanks to Physical Review Ben
dc.titleProximity-induced spin-valley polarization in silicene or germanene on F-doped WS2en
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalPhysical Review Ben
dc.eprint.versionPublisher's Version/PDFen
kaust.authorSattar, Shahiden
kaust.authorSingh, Nirpendraen
kaust.authorSchwingenschlögl, Udoen
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